Acoustic wave device, acoustic wave filter, and composite filter device

ABSTRACT

An acoustic wave device includes a silicon oxide film, a lithium tantalate film, an IDT electrode, and a protection film that are laminated on a support substrate made of silicon. A wavelength normalized film thickness of a lithium tantalate film is denoted by TLT, an Euler angle is θLT, a wavelength normalized film thickness of the silicon oxide film is TS, a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness is TE, a wavelength normalized film thickness of a protection film is TP, a propagation direction in the support substrate is ψSi, and a wavelength normalized film thickness of the support substrate is TSi. Values of TLT, θLT, TS, TE, TP, and ψSi are set such that Ih corresponding to an intensity of a response of a spurious response represented by Formula (1) is greater than about −2.4 in a spurious response.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese Patent Application No. 2018-168265 filed on Sep. 7, 2018 and is a Continuation Application of PCT Application No. PCT/JP2019/035185 filed on Sep. 6, 2019. The entire contents of each application are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to an acoustic wave device, an acoustic wave filter, and a composite filter device including a lithium tantalate film that is laminated on a support substrate made of silicon.

2. Description of the Related Art

A plurality of acoustic wave filters has been widely used in high frequency front end circuits of mobile phones and smartphones. For example, in a demultiplexer described in Japanese Unexamined Patent Application Publication No. 2014-68123, terminals of two or more band pass filters having different frequencies are connected in common. Each of the band pass filters is defined by a surface acoustic wave filter chip. Each surface acoustic wave filter chip includes a plurality of surface acoustic wave resonators.

An acoustic wave resonator described in Japanese Unexamined Patent Application Publication No. 2010-187373 discloses an acoustic wave device formed by laminating an insulation film made of silicon dioxide and a piezoelectric substrate made of lithium tantalate on a silicon support substrate. Bonding in the (111) plane of silicon enhances the heat resistance.

In an acoustic wave device described in Japanese Unexamined Patent Application Publication No. 2014-68123, a plurality of acoustic wave filters having different frequencies are connected in common on antenna terminal side.

The inventors of preferred embodiments of the present application have discovered that a plurality of spurious responses appear on a higher frequency side relative to the main mode used in an acoustic wave resonator in which a lithium tantalate film is laminated directly on or indirectly above a silicon support substrate. When such an acoustic wave resonator is used for an acoustic wave filter having a lower pass band in an acoustic wave device, a spurious response appearing in the acoustic wave filter may appear in a pass band of another acoustic wave filter having a higher pass band in the acoustic wave device. Thus, the filter characteristic of another acoustic wave filter may deteriorate.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide acoustic wave devices, acoustic wave filters, and composite filter devices that are each less likely to generate a ripple in another acoustic wave filter.

An acoustic wave device according to a preferred embodiment of the present invention includes a silicon support substrate, a silicon oxide film laminated above the silicon support substrate, a lithium tantalate film laminated above the silicon oxide film, an IDT electrode including an electrode finger and being provided above the lithium tantalate film, and a protection film covering at least a portion of the IDT electrode. When a wavelength determined by an electrode finger pitch of the IDT electrode is denoted by λ, a wavelength normalized film thickness of the lithium tantalate film is denoted by T_(LT), θ of an Euler angle of the lithium tantalate film is denoted by θ_(LT), a wavelength normalized film thickness of the silicon oxide film is denoted by T_(S), a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness being a product of a wavelength normalized film thickness of the IDT electrode and a value obtained when density of the IDT electrode is divided by density of aluminum is denoted by T_(E), a wavelength normalized film thickness of the protection film being a product of a value obtained when density of the protection film is divided by density of silicon oxide and a wavelength normalized film thickness which is a thickness of the protection film normalized by the wavelength λ, is denoted by T_(P), a propagation direction in the silicon support substrate is denoted by ψ_(Si), and a wavelength normalized film thickness which is a thickness of the silicon support substrate normalized by the wavelength λ is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that a value represented by Formula (1) below is larger than about −2.4:

$\begin{matrix} {I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{S} - c_{T_{S}}} \right)} + {{d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {{d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {{d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {{d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {{d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right){\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right).}}} & {{Formula}(1)} \end{matrix}$

Coefficients a, b, c, d, e, and f in Formula (1) are values described in Table 1 to Table 12 below that are determined in accordance with the crystal orientation of the silicon support substrate and the range of T_(S), T_(LT), and ψ_(Si):

TABLE 1 Si(100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 0 0 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0 0 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −5.857231176 −5.857231176 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148 0.148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −19.75255913 −19.75255913 a_(TE) ⁽¹⁾ −2.877583447 −2.877583447 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.022736 0.022736 c_(TE) 0.242 0.242 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.004788767 0.004788767 a_(ψSi) ⁽¹⁾ 0.024306207 0.024306207 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 81.81 81.81 c_(ψSi) 8.7 8.7 a_(θLT) ⁽²⁾ −0.008235936 −0.008235936 a_(θLT) ⁽¹⁾ −0.021048278 −0.021048278 b_(θLT) ⁽²⁾ 65.16 65.16 c_(θLT) −52.2 −52.2 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 T_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.786852571 −0.786852571 d_(TEψSi) 0 0 d_(TEθLT) −0.237034335 −0.237034335 d_(ψSiθLT) 0 0 e −1.499248378 −1.499248378 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495

TABLE 2 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 125.5342427 a_(TLT) ⁽¹⁾ −13.43961051 −7.643409732 b_(TLT) ⁽²⁾ 0 0.006076558 c_(TLT) 0.329807692 0.321186441 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −11.80744788 −10.05306878 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.158653846 0.153389831 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 −7.595099843 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0.366101695 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.003335792 0 a_(ψSi) ⁽¹⁾ 0.039268266 −0.013700762 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 191.7159763 0 c_(ψSi) 13.26923077 16.01694915 a_(θLT) ⁽²⁾ −0.007476194 0 a_(θLT) ⁽¹⁾ −0.010867175 −0.053997369 b_(θLT) ⁽²⁾ 69.19378698 0 c_(θLT) −50.19230769 −50.59322034 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.629167148 −0.724576033 T_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0.521919406 d_(TSθLT) 0 0 d_(TEψSi) 0 −0.523966449 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.071831837 −3.228508418 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495;

TABLE 3 Si(100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −15.6141248 −15.6141248 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.163309353 0.163309353 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −22.02440893 −22.02440893 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.325179856 0.325179856 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −248.4374004 −248.4374004 a_(TE) ⁽²⁾ −36.57127964 −36.57127964 a_(TE) ⁽¹⁾ 13.88180854 13.88180854 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0.000480119 0.000480119 b_(TE) ⁽²⁾ 0.020416128 0.020416128 c_(TE) 0.240647482 0.240647482 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002456326 0.002456326 a_(ψSi) ⁽¹⁾ 0.048553126 0.048553126 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 279.6050929 279.6050929 c_(ψSi) 22.3381295 22.3381295 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.005427275 0.005427275 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.35971223 −50.35971223 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 T_(TLTθLT) 0 0 d_(TSTE) 41.63149071 41.63149071 d_(TSψSi) −0.577179204 −0.577179204 d_(TSθLT) 0.603866778 0.603866778 d_(TEψSi) 0.134944598 0.134944598 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.703317679 −2.703317679 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495;

TABLE 4 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 133.7896555 a_(TLT) ⁽¹⁾ −7.761727985 −9.701155851 b_(TLT) ⁽²⁾ 0 0.006281971 c_(TLT) 0.315508021 0.306914894 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.35135077 −6.186650236 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.297860963 0.298404255 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 110.8304316 0 a_(TE) ⁽¹⁾ 4.036561723 −8.229960495 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006431411 0 c_(TE) 0.140374332 0.363297872 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002534654 0.001652947 a_(ψSi) ⁽¹⁾ 0.024168138 −0.003241344 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 269.2484772 266.6845858 c_(ψSi) 21.4171123 20.26595745 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0 −0.066116428 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −90 −50.4787234 d_(TLTTS) 96.23533718 0 d_(TLTTE) −66.46866878 0 d_(TLTψSi) −0.404808481 −0.688053172 T_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −0.733337318 0 d_(TSθLT) 0 0 d_(TEψSi) 0.584322518 −0.372994212 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −3.679364607 −4.30794513 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495

TABLE 5 Si (110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −16.69742899 −16.69742899 −33.56520202 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.1675 0.1675 0.192857143 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 15.90196012 15.90196012 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.1525 0.1525 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 26.3030303 0 a_(TE) ⁽¹⁾ 0 0 −6.181053391 0 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006326531 0 c_(TE) 0 0 0.378571429 0 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ −0.000183963 −0.000183963 0 −0.000177142 a_(ψSi) ⁽²⁾ −0.003236307 −0.003236307 0 0.002186084 a_(ψSi) ⁽¹⁾ 0.071460688 0.071460688 0.085067773 0.13561432 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ −5768.71875 −5768.71875 0 2642.857143 b_(ψSi) ⁽²⁾ 399.9375 399.9375 0 500 c_(ψSi) 65.25 65.25 34.28571429 55 a_(θLT) ⁽²⁾ 0 0 0 −0.00533662 a_(θLT) ⁽¹⁾ 0 0 0.070255628 0.032718563 b_(θLT) ⁽²⁾ 0 0 0 65.75963719 c_(θLT) −90 −90 −51.42857143 −50.95238095 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 1.873870705 1.873870705 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0.716151515 0 d_(ψSiθLT) 0 0 −0.00729303 0.002110378 e −0.957101918 −0.957101918 −1.63492254 −1.290881853 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 6 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −23.96596978 −4.695531045 −7.344438725 −5.603099398 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.34 0.3296875 0.338983051 0.306666667 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −23.18485905 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.175555556 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −43.48595551 −70.50554427 −41.95412638 a_(TE) ⁽¹⁾ 0 −2.467954545 −5.460437635 −2.19025056 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006875 0.006716461 0.006819556 c_(TE) 0 0.15 0.365254237 0.360666667 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0.000119479 −0.000172812 a_(ψSi) ⁽²⁾ 0.018474062 0 0.003987724 0.002213009 a_(ψSi) ⁽¹⁾ 0.059131688 0 −0.047908658 0.073831446 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 −2384.203107 1647.952 b_(ψSi) ⁽²⁾ 81.55555556 0 216.791152 242.24 c_(ψSi) 35.33333333 0 30.76271186 62.6 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.009475371 0 0.026725166 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.3333333 −90 −49.83050847 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 42.3018696 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0.617240199 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 2.612107038 0 0 0 d_(TSθLT) 2.129359248 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.871101002 0 0 0 e −2.851861362 −2.210765625 −2.573237283 −2.440604203 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 7 Si (110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −10.87353735 −17.74612134 −16.74814911 −16.74814911 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.167045455 0.158227848 0.168032787 0.168032787 a_(TS) ⁽²⁾ 92.14417413 275.6432031 0 0 a_(TS) ⁽¹⁾ −6.141913324 −0.713377524 −9.071522271 −9.071522271 b_(TS) ⁽²⁾ 0.004213585 0.004749239 0 0 c_(TS) 0.339772727 0.317721519 0.314754098 0.314754098 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −37.82699975 0 0 0 a_(TE) ⁽¹⁾ 4.315324766 3.259148162 −5.270739047 −5.270739047 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.007147469 0 0 c_(TE) 0.153409091 0.138607595 0.356557377 0.356557377 a_(ψSi) ⁽⁶⁾ 0 0 −3.73552E−09 −3.73552E−09 a_(ψSi) ⁽⁵⁾ 0 0 −4.69013E−08 −4.69013E−08 a_(ψSi) ⁽⁴⁾ 0 0 1.07773E−05 1.07773E−05 a_(ψSi) ⁽³⁾ 0.000254041 −0.00026684 5.64997E−05 5.64997E−05 a_(ψSi) ⁽²⁾ 0.00704637 0.003350583 −0.007526984 −0.007526984 a_(ψSi) ⁽¹⁾ −0.123432463 0.05687546 −0.035719404 −0.035719404 b_(ψSi) ⁽⁶⁾ 0 0 1801696668 1801696668 b_(ψSi) ⁽⁵⁾ 0 0 6726299.443 6726299.443 b_(ψSi) ⁽⁴⁾ 0 0 1035415.498 1035415.498 b_(ψSi) ⁽³⁾ −1197.310014 2539.305207 3573.665857 3573.665857 b_(ψSi) ⁽²⁾ 188.2457386 286.0358917 720.1088417 720.1088417 c_(ψSi) 28.125 63.60759494 48.19672131 48.19672131 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046748629 0.00460971 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −51.59090909 −50.75949367 −90 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 105.3055279 0 0 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 58.63016883 0 0 0 d_(TSψSi) 0.443510572 0.274149566 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.293912516 −0.280924747 0 0 d_(TEθLT) 0 0.457718571 0 0 d_(ψSiθLT) 0 −0.005165328 0 0 e −1.722804167 −2.484892701 −2.976959016 −2.976959016 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 8 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 39.48011293 a_(TLT) ⁽¹⁾ −5.239160454 −5.820942031 −4.867344296 −2.496300587 b_(TLT) ⁽²⁾ 0 0 0 0.00654321 c_(TLT) 0.309375 0.302702703 0.286363636 0.288888889 a_(TS) ⁽²⁾ 24.40391167 40.38499201 0 40.45660337 a_(TS) ⁽¹⁾ −2.128595361 −6.73354721 −3.626479228 −6.290401812 b_(TS) ⁽²⁾ 0.006013184 0.005624543 0 0.005617284 c_(TS) 0.3265625 0.275675676 0.31 0.272222222 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −51.46488975 0 0 a_(TE) ⁽¹⁾ −1.921891837 −0.509929613 −1.508039016 −0.870147512 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006479182 0 0 c_(TE) 0.153125 0.147297297 0.341818182 0.351388889 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 −0.000165117 0 −9.55404E−05 a_(ψSi) ⁽²⁾ 0.000936051 0.00475603 0 0.002198207 a_(ψSi) ⁽¹⁾ −0.02141106 0.040196571 −0.017752634 0.036260775 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 2115.829763 0 1531.394676 b_(ψSi) ⁽²⁾ 246.9177246 196.5668371 0 199.8263889 c_(ψSi) 24.140625 57.97297297 21.13636364 60.41666667 a_(θLT) ⁽²⁾ 0 0 0 −0.003220943 a_(θLT) ⁽¹⁾ 0.023743346 0.023741003 0.038368027 0.005042496 b_(θLT) ⁽²⁾ 0 0 0 72.22222222 c_(θLT) −50.078125 −48.51351351 −50.81818182 −50 d_(TLTTS) 0 0 0 −43.45862557 d_(TLTTE) −35.16960363 −48.00382984 23.6423037 52.46703277 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.234382842 0 0 −0.273892853 d_(ψSiθLT) 0 −0.00130658 −0.001221935 0 e −2.175330984 −2.239116787 −2.271294054 −2.496300587 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 9 Si (111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 16.07631847 20.22733656 30.72650306 27.83979251 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.145833333 0.1625 0.159574468 0.158695652 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 17.08812597 27.84866827 31.28009383 12.67453621 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.154166667 0.172916667 0.161702128 0.163043478 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −96.15629371 0 138.3065683 0 a_(TE) ⁽¹⁾ −1.263589744 2.883915191 −9.345807167 −7.807789594 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006649306 0 0.006229063 0 c_(TE) 0.170833333 0.14375 0.369148936 0.345652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 −0.006862727 a_(ψSi) ⁽¹⁾ −0.101535567 −0.012511908 −0.101466433 0.176438509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 114.9456522 c_(ψSi) 24.375 44.375 22.0212766 37.5 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) −477.9162005 −760.9473336 −1054.386561 −1044.340968 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 1.332405924 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 −250.1524613 102.33575 105.8611165 d_(TSψSi) 0 0 0 −2.093429604 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.613440559 0 1.201832187 −0.525734733 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.553295028 −1.074792989 −1.290770348 −1.165057152 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 10 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ −262.3995984 −262.3995984 0 0 a_(TLT) ⁽¹⁾ −59.70400634 −59.70400634 −18.45032018 −20.44479246 b_(TLT) ⁽²⁾ 0.004691358 0.004691358 0 0 c_(TLT) 0.355555556 0.355555556 0.332352941 0.331914894 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −73.33869606 −73.33869606 −9.963926388 −24.5747574 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.185185185 0.185185185 0.166176471 0.165957447 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −19.84024877 −19.84024877 −8.905455835 −17.17093947 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.157407407 0.157407407 0.369117647 0.373404255 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ −4.69771E−05 −4.69771E−05 0 0 a_(ψSi) ⁽³⁾ −0.000362538 −0.000362538 0 0 a_(ψSi) ⁽²⁾ 0.055133453 0.055133453 −0.004320224 0.021125116 a_(ψSi) ⁽¹⁾ 0.020862911 0.020862911 −0.110606012 −0.064218508 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 138552.1512 138552.1512 0 0 b_(ψSi) ⁽³⁾ −78.36076818 −78.36076818 0 0 b_(ψSi) ⁽²⁾ 203.1635802 203.1635802 145.9775087 66.20642825 c_(ψSi) 33.05555556 33.05555556 19.41176471 34.46808511 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.079155699 −0.079155699 0 0.057672719 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.81481481 −49.81481481 −90 −49.14893617 d_(TLTTS) 0 0 0 0 d_(TLTTE) −254.5809235 −254.5809235 80.69948416 99.56817027 d_(TLTψSi) 2.260189055 2.260189055 0 0 T_(TLTθLT) −0.785540829 −0.785540829 0 0 d_(TSTE) −292.5762951 −292.5762951 0 0 d_(TSψSi) −5.914103654 −5.914103654 −1.139436429 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 1.75463008 1.75463008 0.660099875 −3.844659844 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0.006965097 e −1.304804416 −1.304804416 −2.734683251 −3.115044468 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 11 Si (111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0.003649147 0 0 0 a_(TLT) ⁽¹⁾ −17.27824731 −24.3903101 −38.65647339 −21.91795924 b_(TLT) ⁽²⁾ 67.18624026 0 0 0 c_(TLT) 0.154098361 0.15631068 0.17 0.1575 a_(TS) ⁽²⁾ 84.63185118 0 148.7691928 140.0125491 a_(TS) ⁽¹⁾ −6.307527081 −32.68184816 −15.38083251 −11.91949736 b_(TS) ⁽²⁾ 0.004461166 0 0.005012245 0.004623438 c_(TS) 0.352459016 0.345631068 0.331428571 0.33875 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 2.909874306 8.840975559 −16.54803788 −0.024546617 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.135245902 0.148058252 0.372857143 0.33125 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0.006216698 0 0 a_(ψSi) ⁽¹⁾ −0.068574135 −0.018885558 −0.187578295 0.122573316 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 147.1439344 0 0 c_(ψSi) 22.62295082 43.10679612 22.71428571 39.1875 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.023219728 0.047846607 0.097088558 0.096327065 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.16393443 −50.38834951 −50.42857143 −51.25 d_(TLTTS) 0 −144.763071 0 0 d_(TLTTE) 0 0 161.23455326 0 d_(TLTψSi) −0.827435588 0 0 1.107475984 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 103.0553675 −65.68497311 0 d_(TSψSi) 0 −1.329400713 0.82928215 −0.646921162 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.681669875 0.653050787 0.676734069 0.936807034 d_(TEθLT) 0 0 0.481989709 0.52746173 d_(ψSiθLT) 0 0 0 0 e −1.560056382 −2.656750279 −2.259351603 −1.805786084 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 12 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(LT) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 77.3065693 243.6937004 0 a_(TLT) ⁽¹⁾ −13.49335267 −9.878165228 −6.309863061 −12.90130633 b_(TLT) ⁽²⁾ 0 0.00674795 0.006522811 0 c_(TLT) 0.300961538 0.297350993 0.29858156 0.306818182 a_(TS) ⁽²⁾ 133.2691939 160.4037443 82.71737336 100.5491122 a_(TS) ⁽¹⁾ −9.215218873 −21.20902158 −9.283157312 −7.984268054 b_(TS) ⁽²⁾ 0.006618898 0.005353274 0.006382979 0.005704201 c_(TS) 0.314423077 0.303311258 0.3 0.311363636 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 90.39669198 0 0 a_(TE) ⁽¹⁾ 0.170720276 3.925569914 −15.08313602 −9.451928755 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006615499 0 0 c_(TE) 0.15 0.147350993 0.363475177 0.346212121 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00740803 0 0 0 a_(ψSi) ⁽¹⁾ −0.220502432 0.083594751 −0.104344279 0.088096624 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 135.4659763 0 0 0 c_(ψSi) 20.76923077 43.70860927 17.87234043 41.47727273 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.017420386 −0.012240534 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.28846154 −50.26490066 −90 −90 d_(TLTTS) 149.298265 220.9283416 135.5319056 135.1493422 d_(TLTTE) 0 0 0 −65.38520659 d_(TLTψSi) 0 0 0 −0.663828772 d_(TLTθLT) −0.703824061 −0.739197646 0 0 d_(TSTE) 122.4270642 0 −94.62792088 0 d_(TSψSi) 0.714493384 −1.189155195 0 −1.017237669 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0.558597609 0 0 d_(TEθLT) 0.734424122 0.628956462 0 0 d_(ψSiθLT) −0.003900657 0.003268439 0 0 e −2.246432623 −2.691572945 −3.425676672 −3.236112132 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

An acoustic wave device according to another preferred embodiment of the present invention includes a silicon support substrate, a silicon oxide film laminated above the silicon support substrate, a lithium tantalate film laminated above the silicon oxide film, an IDT electrode including an electrode finger and being provided above the lithium tantalate film, and a protection film covering at least a portion of the IDT electrode. When a wavelength determined by an electrode finger pitch of the IDT electrode is denoted by λ, a wavelength normalized film thickness of the lithium tantalate film is denoted by T_(LT), θ of an Euler angle of the lithium tantalate film is denoted by θ_(LT), a wavelength normalized film thickness of the silicon oxide film is denoted by T_(S), a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness being a product of a wavelength normalized film thickness of the IDT electrode and a value obtained when density of the IDT electrode is divided by density of aluminum is denoted by T_(E), a wavelength normalized film thickness of the protection film being a product of a value obtained when density of the protection film is divided by density of silicon oxide and a wavelength normalized film thickness which is a thickness of the protection film normalized by the wavelength λ is denoted by T_(P), a propagation direction in the silicon support substrate is denoted by ψ_(Si), and a wavelength normalized film thickness which is a thickness of the silicon support substrate normalized by the wavelength λ is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that a value represented by Formula (1) below is larger than about −2.4:

$\begin{matrix} {I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{S} - c_{T_{S}}} \right)} + {d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right){\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right).}}} & {{Formula}(1)} \end{matrix}$

Coefficients a, b, c, d, e, and f in Formula (1) are values described in Table 13 to Table 24 below that are determined in accordance with the crystal orientation of the silicon support substrate and the range of T_(S), T_(LT), and ψ_(Si):

TABLE 13 Si (100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −5.687707928 −5.687707928 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.139506173 0.139506173 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 5.653643283 5.653643283 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148148148 0.148148148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −1.004369706 −1.004369706 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.255555556 0.255555556 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000197083 −0.000197083 a_(ψSi) ⁽²⁾ −0.003376583 −0.003376583 a_(ψSi) ⁽¹⁾ 0.118081927 0.118081927 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −379.4708632 −379.4708632 b_(ψSi) ⁽²⁾ 278.0521262 278.0521262 c_(ψSi) 23.14814815 23.14814815 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.128631041 0.128631041 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.32098765 −49.32098765 d_(TLTTS) 0 0 d_(TLTTE) 72.43278274 72.43278274 d_(TLTψSi) 0.604747502 0.604747502 d_(TLTθLT) −1.743618251 −1.743618251 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.994157261 0.994157261 d_(TEψSi) 0 0 d_(TEθLT) 0.280889881 0.280889881 d_(ψSiθLT) 0.003095822 0.003095822 e −5.638096455 −5.638096455 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 14 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 7.809960834 4.249755245 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.30962963 0.302857143 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −0.800874586 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.150714286 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.563479635 9.07053135 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.148518519 0.353571429 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000160979 0 a_(ψSi) ⁽²⁾ −0.000757552 0.001332545 a_(ψSi) ⁽¹⁾ 0.095765615 0.003836714 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 384.7407407 0 b_(ψSi) ⁽²⁾ 278.2222222 285.0956633 c_(ψSi) 21.33333333 20.89285714 a_(θLT) ⁽²⁾ 0 0 0 a_(θLT) ⁽¹⁾ 0.043185248 0.033521037 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50 −50.92857143 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.383208698 −0.220029295 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0.974573109 d_(TEψSi) 0 0 d_(TEθLT) 1.01389349 −1.078939399 d_(ψSiθLT) 0 0.002899732 e −5.569590226 −5.29442278 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 15 Si (100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −11.51287 −11.51287 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.136328125 0.136328125 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 6.022608826 6.022608826 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.305859375 0.305859375 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −180.607873 −180.607873 a_(TE) ⁽²⁾ −1.347493816 −1.347493816 a_(TE) ⁽¹⁾ 4.841204365 4.841204365 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ −0.000227051 −0.000227051 b_(TE) ⁽²⁾ 0.019179688 0.019179688 c_(TE) 0.25625 0.25625 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001342794 −0.001342794 a_(ψSi) ⁽¹⁾ 0.25625 0.25625 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 275.7568359 275.7568359 c_(ψSi) 0.25625 0.25625 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.153688205 0.153688205 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.140625 −49.140625 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) −1.180623763 −1.180623763 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.41394071 0.41394071 d_(ψSiθLT) 0.003203013 0.003203013 e −4.433641408 −4.433641408 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 16 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 119.666412 118.2359738 a_(TLT) ⁽¹⁾ 4.447768142 2.271979446 b_(TLT) ⁽²⁾ 0.006371047 0.00699901 c_(TLT) 0.31147541 0.30631068 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −3.805216895 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.298543689 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 117.8354557 121.7109482 a_(TE) ⁽¹⁾ 2.107193686 −0.578851453 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006775956 0.006610661 c_(TE) 0.15 0.35631068 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001658706 0 a_(ψSi) ⁽¹⁾ 0.005677734 0.003834195 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 272.5477022 0 c_(ψSi) 20.90163934 20.02427184 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.051921544 0.050011808 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.36065574 −48.93203883 d_(TLTTS) 0 0 d_(TLTTE) 61.26575286 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 −82.22932804 d_(TSψSi) 0 0 d_(TSθLT) 0 −0.470524678 d_(TEψSi) 0 0 d_(TEθLT) 0.904198722 −0.776132158 d_(ψSiθLT) 0.003410501 0.003906326 e −5.339814906 −5.463687811 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 17 Si (110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −7.587457615 −7.587457615 −7.587457615 −7.587457615 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.174380165 0.174380165 0.174380165 0.174380165 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −3.979714537 −3.979714537 −3.979714537 −3.979714537 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.150413223 0.150413223 0.150413223 0.150413223 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −0.865040993 −0.865040993 −0.865040993 −0.865040993 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.245867769 0.245867769 0.245867769 0.245867769 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 5.87537E−07 5.87537E−07 5.87537E−07 5.87537E−07 a_(ψSi) ⁽³⁾ −8.59015E−07 −8.59015E−07 −8.59015E−07 −8.59015E−07 a_(ψSi) ⁽²⁾ −0.001948222 −0.001948222 −0.001948222 −0.001948222 a_(ψSi) ⁽¹⁾ −0.027558032 −0.027558032 −0.027558032 −0.027558032 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 1129197.497 1129197.497 1129197.497 1129197.497 b_(ψSi) ⁽³⁾ −1524.372996 −1524.372996 −1524.372996 −1524.372996 b_(ψSi) ⁽²⁾ 776.3813947 776.3813947 776.3813947 776.3813947 c_(ψSi) 41.52892562 41.52892562 41.52892562 41.52892562 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.018744549 0.018744549 0.018744549 0.018744549 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.25619835 −49.25619835 −49.25619835 −49.25619835 d_(TLTTS) 140.6234074 140.6234074 140.6234074 140.6234074 d_(TLTTE) −25.20654793 −25.20654793 −25.20654793 −25.20654793 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.789519626 −1.789519626 −1.789519626 −1.789519626 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 18 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 39.68139696 39.68139696 a_(TLT) ⁽¹⁾ −3.912934705 −3.912934705 −3.801935963 −3.801935963 b_(TLT) ⁽²⁾ 0 0 0.00692398 0.00692398 c_(TLT) 0.306451613 0.306451613 0.297857143 0.297857143 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 1.912614784 1.912614784 −6.089810932 −6.089810932 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.148924731 0.148924731 0.347857143 0.347857143 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 8.78847E−06 8.78847E−06 a_(ψSi) ⁽²⁾ −0.0004718 −0.0004718 −0.000160567 −0.000160567 a_(ψSi) ⁽¹⁾ 0.003265633 0.003265633 −0.023574651 −0.023574651 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 2351.597668 2351.597668 b_(ψSi) ⁽²⁾ 847.4765869 847.4765869 880.2091837 880.2091837 c_(ψSi) 35.32258065 35.32258065 43.07142857 43.07142857 a_(θLT) ⁽²⁾ 0.005014741 0.005014741 0 0 a_(θLT) ⁽¹⁾ 0.023115164 0.023115164 0.030121011 0.030121011 b_(θLT) ⁽²⁾ 67.0626662 67.0626662 0 0 c_(θLT) −49.62365591 −49.62365591 −51.28571429 −51.28571429 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.125572529 0.125572529 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.563162206 0.563162206 −0.417002414 −0.417002414 d_(ψSiθLT) 0 0 0 0 e −2.002512986 −2.002512986 −2.550158637 −2.550158637 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 19 Si (110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 2.992014692 2.992014692 −1.461725087 −1.461725087 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.156390977 0.156390977 0.155345912 0.155345912 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −9.089925228 −9.089925228 −1.247751383 −1.247751383 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.305263158 0.305263158 0.327672956 0.327672956 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −130.6388144 −130.6388144 a_(TE) ⁽¹⁾ 5.773590917 5.773590917 −0.010504162 −0.010504162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006662711 0.006662711 c_(TE) 0.166541353 0.166541353 0.341823899 0.341823899 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 1.03604E−05 1.03604E−05 a_(ψSi) ⁽²⁾ −0.000377109 −0.000377109 −0.000138558 −0.000138558 a_(ψSi) ⁽¹⁾ −0.013702515 −0.013702515 −0.028102653 −0.028102653 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 3096.349671 3096.349671 b_(ψSi) ⁽²⁾ 792.2381141 792.2381141 957.6361695 957.6361695 c_(ψSi) 41.39097744 41.39097744 43.20754717 43.20754717 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.015804666 0.015804666 0.028892246 0.028892246 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.32330827 −49.32330827 −49.62264151 −49.62264151 d_(TLTTS) 0 0 −44.5976835 −44.5976835 d_(TLTTE) 80.90186655 80.90186655 −150.2428298 −150.2428298 d_(TLTψSi) 0 0 0.225109644 0.225109644 d_(TLTθLT) 0 0 0 0 d_(TSTE) 29.68261053 29.68261053 47.35851038 47.35851038 d_(TSψSi) 0.136750854 0.136750854 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.146211814 −0.146211814 0 0 d_(TEθLT) 0.41229257 0.41229257 0 0 d_(ψSiθLT) 0 0 0 0 e −2.596813807 −2.596813807 −2.049341112 −2.049341112 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 20 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.80791074 −2.80791074 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.3069869 0.3069869 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −5.618098986 −5.618098986 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.286462882 0.286462882 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −73.23839461 −73.23839461 a_(TE) ⁽¹⁾ 8.962154821 8.962154821 −5.710295136 −5.710295136 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007310763 0.007310763 c_(TE) 0.167467249 0.167467249 0.330930233 0.330930233 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.003677309 0.003677309 0 0 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 40.93886463 40.93886463 0 0 a_(θLT) ⁽²⁾ 0.00527863 0.00527863 0 0 a_(θLT) ⁽¹⁾ 0.008431458 0.008431458 0 0 b_(θLT) ⁽²⁾ 66.00179249 66.00179249 0 0 c_(θLT) −50.61135371 −50.61135371 −90 −90 d_(TLTTS) 63.6265441 63.6265441 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 57.20229582 57.20229582 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.098212695 −0.098212695 0 0 d_(TEθLT) 0.32576925 0.32576925 0 0 d_(ψSiθLT) 0 0 0 0 e −2.431352404 −2.431352404 −2.39032093 −2.39032093 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 21 Si (111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −26.67263869 −6.49243933 −20.61574251 −21.06290014 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.15443038 0.175438596 0.160759494 0.156896552 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −7.971316395 7.232224634 −16.40433051 −3.920556446 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.14556962 0.133333333 0.144303797 0.144827586 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −110.7824708 −133.1826499 0 a_(TE) ⁽¹⁾ 12.77975858 −10.04988717 5.027045348 −5.686378626 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006463527 0.006582278 0 c_(TE) 0.151265823 0.144736842 0.35 0.35862069 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 −0.007219474 0 a_(ψSi) ⁽¹⁾ 0.028716852 0.04192074 0.016815807 0.008780601 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 125.0280404 0 c_(ψSi) 9.683544304 50 11.58227848 48.10344828 a_(θLT) ⁽²⁾ 0.01035547 0 0 0.014789077 a_(θLT) ⁽¹⁾ 0.162093889 0.106646805 0.164306798 0.04587348 b_(θLT) ⁽²⁾ 61.8811088 0 0 55.43995244 c_(θLT) −49.62025316 −50.35087719 −51.01265823 −51.20689655 d_(TLTTS) −609.1883956 −724.6623011 −297.9828576 −203.214973 d_(TLTTE) −215.420422 0 159.6303697 0 d_(TLTψSi) 0 −3.771938969 2.003207828 −2.014745526 d_(TLTθLT) 1.80686724 0 2.218853872 0 d_(TSTE) 0 −307.4269587 0 0 d_(TSψSi) 0 0 −1.097992723 0 d_(TSθLT) 1.985202008 0 2.104127874 0 d_(TEψSi) 0 0 −1.45135593 0 d_(TEθLT) −203.386471 1.145649707 0 0 d_(ψSiθLT) 2.42647485 0.004357557 0 0 e −5.019952207 −2.13826109 −3.235663805 −3.326865691 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 22 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 45.51074293 −94.44342524 0 a_(TLT) ⁽¹⁾ 0.788515154 −3.454988617 −9.832405019 −3.192556866 b_(TLT) ⁽²⁾ 0 0.006485261 0.006459172 0 c_(TLT) 0.298058252 0.295238095 0.298461538 0.298913043 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −8.97795964 1.31344944 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.142718447 0.147619048 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 9.791468713 0.170587985 −0.71523762 −10.72534988 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.15776699 0.124603175 0.356153846 0.347826087 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0.003924448 0.001661439 0 0.00657999 a_(ψSi) ⁽¹⁾ 0.15776699 −0.024952541 0.02404454 −0.067389114 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 148.4588557 132.0861678 0 152.6937618 c_(ψSi) 15.29126214 46.9047619 14.19230769 43.04347826 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.06700163 0.042141715 0.055240362 0.061747926 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.73786408 −50.15873016 −49.76923077 −49.45652174 d_(TLTTS) 116.7290786 −78.78450728 0 0 d_(TLTTE) 0 85.46351406 −49.85282875 0 d_(TLTψSi) −0.70199108 0.445481139 0 0.604657146 d_(TLTθLT) −0.726496636 0 0 0 d_(TSTE) 0 −116.360096 0 0 d_(TSψSi) 0 −0.622709588 0 0 d_(TSθLT) 2.041329502 −0.339115637 0 0 d_(TEψSi) 0 0.20688896 0 0 d_(TEθLT) 0.774150432 0.439880407 −0.6608739 −1.068569294 d_(ψSiθLT) −0.005400114 0.002667922 −0.004937546 0.006290209 e −4.209434885 −1.791078273 −3.48174155 −3.934527612 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 23 Si (111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −4.673850215 0 −8.8586067 −1.957300157 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.141509434 0 0.153125 0.16 a_(TS) ⁽²⁾ 82.42811022 0 87.42203531 0 a_(TS) ⁽¹⁾ −7.905282467 −4.948155925 −0.569845134 0.521030757 b_(TS) ⁽²⁾ 0.006949092 0 0.006037326 0 c_(TS) 0.294339623 0.314583333 0.297916667 0.285 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 53.51232744 −79.38404758 0 0 a_(TE) ⁽¹⁾ 10.58973083 10.26534018 8.135327356 −7.251553825 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006016376 0.005677083 0 0 c_(TE) 0.183962264 0.1375 0.336458333 0.37 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0.001429494 a_(ψSi) ⁽¹⁾ 0.010122468 0.039888924 −0.016592245 −0.004853684 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 145.6875 c_(ψSi) 11.88679245 48.4375 14.0625 45.75 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.005093912 0.011098836 0.047530531 0.04750516 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50 −50.4166667 −50.72916667 −49.75 d_(TLTTS) 0 0 91.19418307 251.5375225 d_(TLTTE) 0 0 −156.3654518 0 d_(TLTψSi) 0.322255595 0 0 −0.289820964 d_(TLTθLT) −0.768436344 0 −0.735737765 0 d_(TSTE) 0 75.51836907 0 0 d_(TSψSi) −0.512402643 0.300543357 −0.724013025 0.245746891 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.50556971 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0.002842264 0 0 e −2.770026639 −2.638591885 −1.980941925 −2.412296494 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 24 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 4.449764983 0 −13.78321665 −10.59163435 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.321052632 0 0.309146341 0.303164557 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 −3.433673203 −1.746861763 3.363230821 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0.283443709 0.287804878 0.293037975 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 86.18383552 0 a_(TE) ⁽¹⁾ 3.853394073 8.768511808 −1.86755053 −15.6861606 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007157942 0 c_(TE) 0.181578947 0.135430464 0.356097561 0.363291139 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.014178515 0.049910217 −0.008697771 0.012742666 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 12.63157895 45.99337748 15.09146341 45 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0.061867934 0.051566965 0.028929641 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −50.59602649 −50.30487805 −50.56962025 d_(TLTTS) 0 0 0 −103.0440888 d_(TLTTE) 0 0 0 0 d_(TLTψSi) −0.181721459 0 0 0 d_(TLTθLT) 0 0 0 −0.608943868 d_(TSTE) 0 113.1914268 −75.04640382 −82.04954672 d_(TSψSi) 0 0 −0.554356722 0.673316097 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.512800103 0 d_(TEθLT) 0 0 −0.656702553 0 d_(ψSiθLT) 0 0 0 0 e −2.401219798 −3.18651044 −3.93030224 −4.143483981 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

An acoustic wave device according to another preferred embodiment of the present invention includes a silicon support substrate, a silicon oxide film laminated above the silicon support substrate, a lithium tantalate film laminated above the silicon oxide film, an IDT electrode including an electrode finger and being provided above the lithium tantalate film, and a protection film covering at least a portion of the IDT electrode. When a wavelength determined by an electrode finger pitch of the IDT electrode is denoted by λ, a wavelength normalized film thickness of the lithium tantalate film is denoted by T_(LT), θ of an Euler angle of the lithium tantalate film is denoted by θ_(LT), a wavelength normalized film thickness of the silicon oxide film is denoted by T_(S), a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness being a product of a wavelength normalized film thickness of the IDT electrode and a value obtained when density of the IDT electrode is divided by density of aluminum is denoted by T_(E), a wavelength normalized film thickness of the protection film being a product of a value obtained when density of the protection film is divided by density of silicon oxide and a wavelength normalized film thickness which is a thickness of the protection film normalized by the wavelength λ is denoted by T_(P), a propagation direction in the silicon support substrate is denoted by ψ_(Si), and a wavelength normalized film thickness which is a thickness of the silicon support substrate normalized by the wavelength λ, is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that a value represented by Formula (1) below is larger than about −2.4:

$\begin{matrix} {I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{S} - c_{T_{S}}} \right)} + {d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right){\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right).}}} & {{Formula}(1)} \end{matrix}$

Coefficients a, b, c, d, e, and f in Formula (1) are values described in Table 25 to Table 36 below that are determined in accordance with the crystal orientation of the silicon support substrate and the range of T_(S), T_(LT), and ψ_(Si):

TABLE 25 Si (100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −16.39135605 −16.39135605 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.196774194 0.196774194 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −4.824831305 −4.824831305 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.170967742 0.170967742 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −45.57608817 −45.57608817 a_(TE) ⁽¹⁾ −10.80005563 −10.80005563 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.018296046 0.018296046 c_(TE) 0.303225806 0.303225806 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000172048 0.000172048 a_(ψSi) ⁽²⁾ −0.00384923 −0.00384923 a_(ψSi) ⁽¹⁾ −0.009826773 −0.009826773 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 143.0843208 143.0843208 b_(ψSi) ⁽²⁾ 215.8688866 215.8688866 c_(ψSi) 22.25806452 22.25806452 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.066799879 0.066799879 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.16129032 −50.16129032 d_(TLTTS) 0 0 d_(TLTTE) −112.847682 −112.847682 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −1.750763196 −1.750763196 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.466692151 0.466692151 d_(ψSiθLT) 0 0 e −2.904746788 −2.904746788 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 26 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −8.135537689 −8.135537689 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.311659193 0.311659193 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.38200282 −20.38200282 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.149327354 0.149327354 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.460675692 −3.460675692 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.267488789 0.267488789 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.003759233 −0.003759233 a_(ψSi) ⁽¹⁾ 0.015931998 0.015931998 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 239.0395946 239.0395946 c_(ψSi) 18.90134529 18.90134529 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.017576249 0.017576249 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.9103139 −49.9103139 d_(TLTTS) −152.1817236 −152.1817236 d_(TLTTE) 0 0 d_(TLTψSi) −0.359387178 −0.359387178 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.911415415 0.911415415 d_(TEψSi) 0 0 d_(TEθLT) 0.275815872 0.275815872 d_(ψSiθLT) 0 0 e −3.952626598 −3.952626598 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 27 Si (100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −26.36951471 −26.36951471 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.161538462 0.161538462 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −10.09828536 −10.09828536 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.321025641 0.321025641 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −21.38297597 −21.38297597 a_(TE) ⁽¹⁾ −2.383287449 −2.383287449 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.01947666 0.01947666 c_(TE) 0.270512821 0.270512821 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000176024 0.000176024 a_(ψSi) ⁽²⁾ −0.001397911 −0.001397911 a_(ψSi) ⁽¹⁾ −0.107515297 −0.107515297 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −282.3623122 −282.3623122 b_(ψSi) ⁽²⁾ 255.2071006 255.2071006 c_(ψSi) 23.84615385 23.84615385 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.085112984 0.085112984 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.97435897 −48.97435897 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.816828716 −0.816828716 d_(TLTθLT) 0.865519967 0.865519967 d_(TSTE) 0 0 d_(TSψSi) −0.538336559 −0.538336559 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.002971652 0.002971652 e −3.504362202 −3.504362202 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 28 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −6.371850196 −6.371850196 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.292192192 0.292192192 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −0.609606885 −0.609606885 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.2996997 0.2996997 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 0 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000224133 0.000224133 a_(ψSi) ⁽²⁾ −0.004048532 −0.004048532 a_(ψSi) ⁽¹⁾ −0.126847922 −0.126847922 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 1375.85979 1375.85979 b_(ψSi) ⁽²⁾ 281.2555799 281.2555799 c_(ψSi) 19.77477477 19.77477477 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.056146223 0.056146223 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.48948949 −49.48948949 d_(TLTTS) 94.47145497 94.47145497 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.568942451 −0.568942451 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.005654813 0.005654813 e −4.940340284 −4.940340284 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 29 Si (110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −11.04825287 −11.04825287 −11.04825287 −11.04825287 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.164705882 0.164705882 0.164705882 0.164705882 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.86806521 −12.86806521 −12.86806521 −12.86806521 a_(TE) ⁽¹⁾ 39.88235294 39.88235294 39.88235294 39.88235294 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.019258131 0.019258131 0.019258131 0.019258131 c_(TE) 0.286470588 0.286470588 0.286470588 0.286470588 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.000762445 −0.000762445 −0.000762445 −0.000762445 a_(ψSi) ⁽¹⁾ −0.031584918 −0.031584918 −0.031584918 −0.031584918 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 749.7716263 749.7716263 749.7716263 749.7716263 c_(ψSi) 52.58823529 52.58823529 52.58823529 52.58823529 a_(θLT) ⁽²⁾ −0.004115091 −0.004115091 −0.004115091 −0.004115091 a_(θLT) ⁽¹⁾ 0.023260981 0.023260981 0.023260981 0.023260981 b_(θLT) ⁽²⁾ 81.16262976 81.16262976 81.16262976 81.16262976 c_(θLT) −50.11764706 −50.11764706 −50.11764706 −50.11764706 d_(TLTTS) 0 0 0 0 d_(TLTTE) −32.35244505 −32.35244505 −32.35244505 −32.35244505 d_(TLTψSi) 0.348515389 0.348515389 0.348515389 0.348515389 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.000823202 0.000823202 0.000823202 0.000823202 e −1.678155024 −1.678155024 −1.678155024 −1.678155024 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 30 Si (110) 0.2 ≤ TLT ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 34.01092867 34.01092867 a_(TLT) ⁽¹⁾ −3.294448859 −3.294448859 −2.996122319 −2.996122319 b_(TLT) ⁽²⁾ 0 0 0.005572031 0.005572031 c_(TLT) 0.328378378 0.328378378 0.31344086 0.31344086 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 2.752851676 2.752851676 −1.564359965 −1.564359965 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.162837838 0.162837838 0.160752688 0.160752688 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −4.548790211 −4.548790211 −1.370514553 −1.370514553 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.165540541 0.165540541 0.355913978 0.355913978 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −7.03888E−08 −7.03888E−08 −3.78178E−08 −3.78178E−08 a_(ψSi) ⁽⁴⁾ 1.4265E−06 1.4265E−06 9.79065E−07 9.79065E−07 a_(ψSi) ⁽³⁾ 0.000180358 0.000180358 9.73597E−05 9.73597E−05 a_(ψSi) ⁽²⁾ −0.002681874 −0.002681874 −0.00192926 −0.00192926 a_(ψSi) ⁽¹⁾ −0.092266284 −0.092266284 −0.04329175 −0.04329175 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 11701030.08 11701030.08 24265475.25 24265475.25 b_(ψSi) ⁽⁴⁾ 1439156.296 1439156.296 1705613.393 1705613.393 b_(ψSi) ⁽³⁾ 1798.436559 1798.436559 6938.899332 6938.899332 b_(ψSi) ⁽²⁾ 930.5183985 930.5183985 1060.880593 1060.880593 c_(ψSi) 40.23648649 40.23648649 40.08064516 40.08064516 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046000242 0.046000242 0.001380272 0.001380272 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.52702703 −49.52702703 −50.05376344 −50.05376344 d_(TLTTS) −136.9978702 −136.9978702 −73.06084164 −73.06084164 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.096651605 0.096651605 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 −56.78924979 −56.78924979 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.081014811 0.081014811 0 0 d_(TEθLT) 0 0 −0.194432704 −0.194432704 d_(ψSiθLT) 0 0 0.000875955 0.000875955 e −2.543790382 −2.543790382 −2.964933907 −2.964933907 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 31 Si (110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −13.1565646 −13.1565646 −13.1565646 −13.1565646 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.179661017 0.179661017 0.179661017 0.179661017 a_(TS) ⁽²⁾ −54.97015257 −54.97015257 54.97015257 54.97015257 a_(TS) ⁽¹⁾ 1.195559996 1.195559996 1.195559996 1.195559996 b_(TS) ⁽²⁾ 0.006496856 0.006496856 0.006496856 0.006496856 c_(TS) 0.299435028 0.299435028 0.299435028 0.299435028 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.83875925 −12.83875925 −12.83875925 −12.83875925 a_(TE) ⁽¹⁾ −2.591177902 −2.591177902 −2.591177902 −2.591177902 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.02062115 0.02062115 0.02062115 0.02062115 c_(TE) 0.282768362 0.282768362 0.282768362 0.282768362 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 a_(ψSi) ⁽¹⁾ −0.016861509 −0.016861509 −0.016861509 −0.016861509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 c_(ψSi) 44.83050847 44.83050847 44.83050847 44.83050847 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020120147 0.020120147 0.020120147 0.020120147 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.50847458 −50.50847458 −50.50847458 −50.50847458 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0.250474306 0.250474306 0.250474306 0.250474306 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.031071552 0.031071552 0.031071552 0.031071552 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.687640015 −1.687640015 −1.687640015 −1.687640015 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 32 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −8.387315737 −8.387315737 −11.34973266 −6.017883428 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.313377926 0.313377926 0.291082803 0.294578313 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.140898252 0.140898252 3.107378473 2.287606243 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.299331104 0.299331104 0.277707006 0.296385542 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −1.209727849 −1.209727849 −4.259242642 −1.280235687 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.152006689 0.152006689 0.343630573 0.351204819 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −2.33027E−08 −2.33027E−08 0 0 a_(ψSi) ⁽⁴⁾ 7.78115E−07 7.78115E−07 0 0 a_(ψSi) ⁽³⁾ 5.59108E−05 5.59108E−05 −0.000194818 0 a_(ψSi) ⁽²⁾ −0.002410767 −0.002410767 0.000247924 0 a_(ψSi) ⁽¹⁾ −0.027662563 −0.027662563 0.12904143 −0.026766472 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 2083705.649 2083705.649 0 0 b_(ψSi) ⁽⁴⁾ 1386257.115 1386257.115 0 0 b_(ψSi) ⁽³⁾ −1267.41343 −1267.41343 1811.750092 0 b_(ψSi) ⁽²⁾ 895.5856198 895.5856198 293.105197 0 c_(ψSi) 42.14046823 42.14046823 19.39490446 67.95180723 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020067585 0.020067585 −0.011988832 0.032566601 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.73244147 −49.73244147 −49.61783439 −50.96385542 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 41.29194486 d_(TLTψSi) 0 0 −0.203585177 0.376861254 d_(TLTθLT) 0 0 −0.273779971 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 −0.20937463 d_(TSθLT) −0.349110894 −0.349110894 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.216865482 −0.216865482 0 0 d_(ψSiθLT) 0 0 0.00120304 0 e −2.390757235 −2.390757235 −2.548464154 2.523994879 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 33 Si (111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −3.047618237 −3.047618237 −3.047618237 −3.047618237 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.160869565 0.160869565 0.160869565 0.160869565 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 11.21750437 11.21750437 11.21750437 11.21750437 a_(TE) ⁽²⁾ −3.666215654 −3.666215654 −3.666215654 −3.666215654 a_(TE) ⁽¹⁾ −0.035248162 −0.035248162 −0.035248162 −0.035248162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0.000381688 0.000381688 0.000381688 0.000381688 b_(TE) ⁽²⁾ 0.012589792 0.012589792 0.012589792 0.012589792 c_(TE) 0.245652174 0.245652174 0.245652174 0.245652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.003582211 −0.003582211 −0.003582211 −0.003582211 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 35.86956522 35.86956522 35.86956522 35.86956522 a_(θLT) ⁽²⁾ −0.000596775 −0.000596775 −0.000596775 −0.000596775 a_(θLT) ⁽¹⁾ 0.003385783 0.003385783 0.003385783 0.003385783 b_(θLT) ⁽²⁾ 77.88279773 77.88279773 77.88279773 77.88279773 c_(θLT) −47.82608696 −47.82608696 −47.82608696 −47.82608696 d_(TLTTS) 0 0 0 0 d_(TLTTE) −2.939323227 −2.939323227 −2.939323227 −2.939323227 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.000442922 −0.000442922 −0.000442922 −0.000442922 e −0.277577227 −0.277577227 −0.277577227 −0.277577227 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 34 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 6.03484153 6.03484153 6.03484153 6.03484153 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.183333333 0.183333333 0.183333333 0.183333333 a_(TE) ⁽⁴⁾ 215.3850281 −215.3850281 215.3850281 −215.3850281 a_(TE) ⁽³⁾ 54.12265846 54.12265846 54.12265846 54.12265846 a_(TE) ⁽²⁾ 0.942905209 0.942905209 0.942905209 0.942905209 a_(TE) ⁽¹⁾ −1.08045121 −1.08045121 −1.08045121 −1.08045121 b_(TE) ⁽⁴⁾ 0.000339332 0.000339332 0.000339332 0.000339332 b_(TE) ⁽³⁾ 0.000317558 0.000317558 0.000317558 0.000317558 b_(TE) ⁽²⁾ 0.011265432 0.011265432 0.011265432 0.011265432 c_(TE) 0.211111111 0.211111111 0.211111111 0.211111111 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004526908 −0.004526908 −0.004526908 −0.004526908 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 27.5 27.5 27.5 27.5 a_(θLT) ⁽²⁾ −0.00046365 −0.00046365 −0.00046365 −0.00046365 a_(θLT) ⁽¹⁾ 0.005349146 0.005349146 0.005349146 0.005349146 b_(θLT) ⁽²⁾ 57.09876543 57.09876543 57.09876543 57.09876543 c_(θLT) −46.11111111 −46.11111111 −46.11111111 −46.11111111 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 45.80413521 45.80413521 45.80413521 45.80413521 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.071786246 −0.071786246 −0.071786246 −0.071786246 d_(ψSiθLT) −0.000425881 −0.000425881 −0.000425881 −0.000425881 e −0.446604617 −0.446604617 −0.446604617 −0.446604617 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 35 Si (111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.477108842 −2.477108842 −2.477108842 −2.477108842 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.137349398 0.137349398 0.137349398 0.137349398 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −0.488747927 −0.488747927 −0.488747927 −0.488747927 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.336144578 0.336144578 0.336144578 0.336144578 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −1.973253274 −1.973253274 −1.973253274 −1.973253274 a_(TE) ⁽¹⁾ −0.124870592 −0.124870592 −0.124870592 −0.124870592 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.017915517 0.017915517 0.017915517 0.017915517 c_(TE) 0.256024096 0.256024096 0.256024096 0.256024096 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 7.6083E−07 7.6083E−07 7.6083E−07 7.6083E−07 a_(ψSi) ⁽³⁾ 7.21121E−06 7.21121E−06 7.21121E−06 7.21121E−06 a_(ψSi) ⁽²⁾ −0.000857107 −0.000857107 −0.000857107 −0.000857107 a_(ψSi) ⁽¹⁾ −0.00490823 −0.00490823 −0.00490823 −0.00490823 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 105622.9088 105622.9088 105622.9088 105622.9088 b_(ψSi) ⁽³⁾ −217.2019476 −217.2019476 −217.2019476 −217.2019476 b_(ψSi) ⁽²⁾ 208.4409929 208.4409929 208.4409929 208.4409929 c_(ψSi) 30.54216867 30.54216867 30.54216867 30.54216867 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) 4.821777856 4.821777856 4.821777856 4.821777856 d_(TLTTE) −4.14067246 −4.14067246 −4.14067246 −4.14067246 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.024454063 0.024454063 0.024454063 0.024454063 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.240178915 −0.240178915 −0.240178915 −0.240178915 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 36 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.380779889 0.380779889 0.380779889 0.380779889 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.285294118 0.285294118 0.285294118 0.285294118 a_(TE) ⁽⁴⁾ −165.3225345 −165.3225345 −165.3225345 −165.3225345 a_(TE) ⁽³⁾ 23.65923214 23.65923214 23.65923214 23.65923214 a_(TE) ⁽²⁾ 2.256295059 2.256295059 2.256295059 2.256295059 a_(TE) ⁽¹⁾ −0.292409126 −0.292409126 −0.292409126 −0.292409126 b_(TE) ⁽⁴⁾ 0.00051583 0.00051583 0.00051583 0.00051583 b_(TE) ⁽³⁾ 0.00070344 0.00070344 0.00070344 0.00070344 b_(TE) ⁽²⁾ 0.015017301 0.015017301 0.015017301 0.015017301 c_(TE) 0.220588235 0.220588235 0.220588235 0.220588235 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004846255 −0.004846255 −0.004846255 −0.004846255 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 29.55882353 29.55882353 29.55882353 29.55882353 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.00165846 0.00165846 0.00165846 0.00165846 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.52941176 −48.52941176 −48.52941176 −48.52941176 d_(TLTTS) −0.04933649 −0.04933649 −0.04933649 −0.04933649 d_(TLTTE) −0.021023839 −0.021023839 −0.021023839 0.021023839 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 d_(TSTE) −7.074776252 −7.074776252 −7.074776252 −7.074776252 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.00049898 −0.00049898 −0.00049898 −0.00049898 e −0.3405485 −0.3405485 −0.3405485 −0.3405485 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

An acoustic wave filter according to a preferred embodiment of the present invention includes a plurality of resonators, and at least one of the plurality of resonators is defined by an acoustic wave device according to a preferred embodiment of the present invention.

A composite filter device according to a preferred embodiment of the present invention includes N band pass filters having different pass bands where N is two or more, and one terminal of each of the N band pass filters is connected in common on an antenna terminal side. At least one of the N band pass filters excluding a band pass filter having a highest pass band includes one or more acoustic wave resonators. At least one of the one or more acoustic wave resonators is defined by an acoustic wave device according to a preferred embodiment of the present invention.

According to preferred embodiments of the present invention, it is possible to provide acoustic wave devices that are each less likely to generate a ripple in another acoustic wave filter that is connected in common, and to provide acoustic wave filters and composite filter devices that each include an acoustic wave device according to a preferred embodiment of the present invention.

The above and other elements, features, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are a schematic front sectional view of an acoustic wave device according to a first preferred embodiment of the present invention, and a schematic plan view of the acoustic wave device according to the first preferred embodiment of the present invention illustrating an electrode structure thereof.

FIG. 2 is a graph showing the admittance characteristic of an acoustic wave resonator.

FIG. 3 is a graph showing the relationship between a propagation direction ψ_(Si) in a single crystal Si layer and an intensity S11 of a response of a spurious response A.

FIG. 4 is a graph showing the relationship between a wavelength normalized film thickness T_(LT) of a lithium tantalate film and the intensity S11 of a response of the spurious response A.

FIG. 5 is a graph showing the relationship between a cut angle (90°−θ_(LT)) of the lithium tantalate film and the intensity S11 of a response of the spurious response A.

FIG. 6 is a graph showing the relationship between a wavelength normalized film thickness T_(S) of a SiO₂ film and the intensity S11 of a response of the spurious response A.

FIG. 7 is a graph showing the relationship between a wavelength normalized film thickness T_(E) of an IDT electrode and the intensity S11 of a response of the spurious response A.

FIG. 8 is a graph showing the relationship between a wavelength normalized film thickness T_(P) of a protection film being a silicon oxide film and the intensity S11 of a response of the spurious response A.

FIG. 9 is a circuit diagram of a composite filter device including the acoustic wave device of the first preferred embodiment of the present invention.

FIG. 10 is a circuit diagram illustrating an acoustic wave filter including the acoustic wave device of the first preferred embodiment of the present invention and being used in the composite filter device.

FIG. 11A is a graph showing the filter characteristic of a composite filter device including an acoustic wave device of a comparative example, and FIG. 11B is a graph showing the filter characteristic of the composite filter device as the preferred embodiment of the present invention.

FIG. 12 is a graph showing the relationship between a wavelength normalized film thickness of the single crystal Si layer and responses of the spurious responses A, B, and C.

FIG. 13 is a graph showing the relationship between the propagation direction ψ_(Si) in the single crystal Si layer and the intensity S11 of a response of the spurious response B.

FIG. 14 is a graph showing the relationship between the wavelength normalized film thickness T_(LT) of the lithium tantalate film and the intensity S11 of a response of the spurious response B.

FIG. 15 is a graph showing the relationship between the cut angle (90°−θ_(LT)) of the lithium tantalate film and the intensity S11 of a response of the spurious response B.

FIG. 16 is a graph showing the relationship between the wavelength normalized film thickness T_(S) of the SiO₂ film and the intensity S11 of a response of the spurious response B.

FIG. 17 is a graph showing the relationship between the wavelength normalized film thickness T_(E) of the IDT electrode and the intensity S11 of a response of the spurious response B.

FIG. 18 is a graph showing the relationship between the wavelength normalized film thickness T_(P) of the protection film being the silicon oxide film and the intensity S11 of a response of the spurious response B.

FIG. 19 is a graph showing the relationship between the propagation direction ψ_(Si) in the single crystal Si layer and the intensity S11 of a response of the spurious response C.

FIG. 20 is a graph showing the relationship between the wavelength normalized film thickness T_(LT) of the lithium tantalate film and the intensity S11 of a response of the spurious response C.

FIG. 21 is a graph showing the relationship between the cut angle (90°−θ_(LT)) of the lithium tantalate film and the intensity S11 of a response of the spurious response C.

FIG. 22 is a graph showing the relationship between the wavelength normalized film thickness T_(S) of the SiO₂ film and the intensity S11 of a response of the spurious response C.

FIG. 23 is a graph showing the relationship between the wavelength normalized film thickness T_(E) of the IDT electrode and the intensity S11 of a response of the spurious response C.

FIG. 24 is a graph showing the relationship between the wavelength normalized film thickness T_(P) of the protection film being the silicon oxide film and the intensity S11 of a response of the spurious response C.

FIG. 25 is a graph showing the relationship between a film thickness of a LiTaO₃ film and a Q characteristic in the acoustic wave device.

FIG. 26 is a graph showing the relationship between the film thickness of the LiTaO₃ film and a temperature coefficient of frequency TCF in the acoustic wave device.

FIG. 27 is a graph showing the relationship between the film thickness of the LiTaO₃ film and an acoustic velocity in the acoustic wave device.

FIG. 28 is a graph showing the relationship between the LiTaO₃ film thickness and a fractional bandwidth.

FIG. 29 is a graph showing the relationship among the film thickness of the SiO₂ film, material of a high acoustic velocity film, and the acoustic velocity.

FIG. 30 is a graph showing the relationship among the film thickness of the SiO₂ film, an electromechanical coupling coefficient, and material of the high acoustic velocity film.

FIG. 31 is a partially enlarged front sectional view for describing a modification of an acoustic wave device according to a preferred embodiment of the present invention which thickness of the protection film is partially different.

FIG. 32 is a partially enlarged front sectional view for describing another modification of an acoustic wave device according to a preferred embodiment of the present invention in which thickness of the protection film is partially different.

FIG. 33 is a partially enlarged front sectional view for describing another modification of an acoustic wave device according to a preferred embodiment of the present invention in which thickness of the protection film is partially different.

FIG. 34 is a front sectional view illustrating a modification of the acoustic wave resonator used in an acoustic wave device according to a preferred embodiment of the present invention.

FIG. 35 is a front sectional view illustrating another modification of the acoustic wave resonator used in an acoustic wave device according to a preferred embodiment of the present invention.

FIG. 36 is a partially enlarged front sectional view for describing a modification of an acoustic wave device according to a preferred embodiment of the present invention in which the protection film is a laminated film.

FIG. 37 is a schematic diagram for describing crystal orientation Si (100).

FIG. 38 is a schematic diagram for describing crystal orientation Si (110).

FIG. 39 is a schematic diagram for describing crystal orientation Si (111).

FIG. 40 is a schematic configuration diagram of a communication apparatus including a high frequency front end circuit according to a preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, the present invention will be clarified by the description of preferred embodiments of the present invention with reference to drawings.

It should be noted that the preferred embodiments described in this description are merely exemplary, and that a partial replacement or a combination of configurations is possible between the different preferred embodiments.

FIG. 1A is a schematic front sectional view of an acoustic wave device according to a first preferred embodiment of the present invention and FIG. 1B is a schematic plan view of an electrode structure thereof.

An acoustic wave device 1 is a one-port acoustic wave resonator. The acoustic wave device 1 includes a single crystal Si layer 2 defining and functioning as a support substrate. A SiO₂ film 3 as a silicon oxide film and a lithium tantalate film (LiTaO₃ film) 4 are laminated above the single crystal Si layer 2. The lithium tantalate film 4 includes a first main surface 4 a and a second main surface 4 b opposite to each other. An IDT electrode 5 is provided above the first main surface 4 a. Reflectors 6 and 7 are provided on both sides of the IDT electrode 5 in an acoustic wave propagation direction. The SiO₂ film 3 as the silicon oxide film may include not only SiO₂, but also silicon oxide, for example, in which SiO₂ is doped with fluorine or the like. The silicon oxide film may be, for example, a multilayer structure including a plurality of layers made of silicon oxide. An intermediate layer made of, for example, titanium, nickel, or the like may be included between the plurality of layers. The thickness of the silicon oxide film in this case means the thickness of the entire multilayer structure.

A protection film 8 covers the IDT electrode 5 and the reflectors 6 and 7. The protection film 8 is preferably, for example, a silicon oxide film in the present preferred embodiment. However, the protection film 8 may be a film made of various dielectrics such as, for example, silicon oxynitride, silicon nitride, or the like. In addition, in the present preferred embodiment, the protection film 8 covers not only the upper side of an electrode finger of the IDT electrode 5, but also the upper surface of the lithium tantalate film 4 and the side surfaces of the electrode finger. However, the configuration of the protection film 8 is not limited thereto.

The inventors of preferred embodiments of the present application have discovered that responses are generated by spurious responses A, B, and C described below in the acoustic wave resonator in which a lithium tantalate film is laminated directly on or indirectly above the single crystal Si layer 2.

FIG. 2 is a graph showing the admittance characteristic of the acoustic wave resonator for describing the spurious responses A, B, and C. The admittance characteristic described in FIG. 2 is the admittance characteristic of the acoustic wave resonator with the following design parameters, and not of a preferred embodiment of the present invention.

Euler angles (φ_(Si), θ_(Si), ψ_(Si)) of the single crystal Si layer are (0°, 0°, 45°). The film thickness of the SiO₂ film is about 0.30λ, the film thickness of the lithium tantalate film is about 0.30λ, and the Euler angles (φ_(LT), θ_(LT), ψ_(LT)) of the lithium tantalate film are (0°, −40°, 0°). The wavelength λ determined by the electrode finger pitch of the IDT electrode is about 1 μm. The IDT electrode includes laminated metal films in which an Al film and a Ti film are laminated, and has a thickness of about 0.05λ in terms of aluminum.

As shown in FIG. 2 , the spurious responses A, B, and C appear on a higher frequency side relative to a main mode response in the acoustic wave resonator described above. The high and low order of frequencies of the spurious responses A, B, and C satisfies the relationship, spurious response A<spurious response B<spurious response C. The spurious response A is closest to the main mode.

In the acoustic wave device 1 of the present preferred embodiment, at least one of the responses of the spurious response A, the response of the spurious response B, and the response of the spurious response C is reduced or prevented.

The wavelength determined by the electrode finger pitch of the IDT electrode 5 is denoted by λ. The wavelength normalized film thickness of the lithium tantalate film 4 is denoted by T_(LT), the Euler angle θ of the lithium tantalate film is denoted by θ_(LT), the wavelength normalized film thickness of the SiO₂ film 3 is denoted by T_(S), the wavelength normalized film thickness of the IDT electrode 5 in terms of aluminum thickness is denoted by T_(E). The wavelength normalized film thickness of the protection film 8 is denoted by T_(P), where T_(P) is the product of a value obtained when density of the protection film 8 is divided by density of silicon oxide and the wavelength normalized film thickness of the protection film 8 normalized by the wavelength λ. The propagation direction in the single crystal Si layer 2 is denoted by ψ_(Si), and the wavelength normalized film thickness of the single crystal Si layer 2 is denoted by T_(Si). T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that the value I_(h) represented by Formula (1) below for at least one of the spurious responses A, B, and C is greater than about −2.4 and the inequality T_(Si)> about 20 is satisfied at the same time. Thus, at least one of the responses of the spurious responses A, B and C is effectively reduced or prevented. This will be described in detail below.

Note that, in the present description, the wavelength normalized film thickness is the value obtained when a film thickness is normalized by the wavelength λ, determined by the electrode finger pitch of the IDT electrode. That is, the wavelength normalized film thickness is the value obtained when an actual thickness is divided by λ. The wavelength λ determined by the electrode finger pitch of the IDT electrode may be determined by an average value of the electrode finger pitches.

The density of the IDT electrode 5 is the value obtained from the density of the metal material constituting the IDT electrode 5, rather than a measured value. The density of aluminum is about 2698.9 kg/m³. This value is described in page 26 of “Handbook of Chemistry: Pure Chemistry II, 4th edition, The Chemical Society of Japan, published by Maruzen Publishing Co., Ltd. (1993)”.

Here, the density of the protection film 8 is the value obtained based on the density of the material of the protection film 8, rather than a measured value. The density of silicon oxide is about 2200 kg/m³. This value is described in page 922 of “Handbook of Chemistry: Applied Chemistry II, Materials, 4th edition, The Chemical Society of Japan, published by Maruzen Publishing Co., Ltd. (1993)”.

Note that, in the present description, the thickness of the protection film 8 refers to a thickness of the protection film in a portion positioned on the upper side of the electrode finger of the IDT electrode.

$\begin{matrix} {I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{S} - c_{T_{S}}} \right)} + {d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {{d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)}\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right){\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right).}}} & {{Formula}(1)} \end{matrix}$

The coefficients a, b, c, d, e, and f in Formula (1) are values in Table 37 to Table 72 below. The values are specified in accordance with the type of spurious responses, the orientation (100), (110), or (111) of the single crystal Si layer 2, and the range of the wavelength normalized film thicknesses of the SiO₂ film 3 and the lithium tantalate film 4, and the like.

TABLE 37 Si (100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 0 0 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0 0 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −5.857231176 −5.857231176 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148 0.148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −19.75255913 −19.75255913 a_(TE) ⁽¹⁾ −2.877583447 −2.877583447 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.022736 0.022736 c_(TE) 0.242 0.242 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.004788767 0.004788767 a_(ψSi) ⁽¹⁾ 0.024306207 0.024306207 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 81.81 81.81 c_(ψSi) 8.7 8.7 a_(θLT) ⁽²⁾ −0.008235936 −0.008235936 a_(θLT) ⁽¹⁾ −0.021048278 −0.021048278 b_(θLT) ⁽²⁾ 65.16 65.16 c_(θLT) −52.2 −52.2 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.786852571 −0.786852571 d_(TEψSi) 0 0 d_(TEθLT) −0.237034335 −0.237034335 d_(ψSiθLT) 0 0 e −1.499248378 −1.499248378 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495

TABLE 38 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 125.5342427 a_(TLT) ⁽¹⁾ −13.43961051 −7.643409732 b_(TLT) ⁽²⁾ 0 0.006076558 c_(TLT) 0.329807692 0.321186441 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −11.80744788 −10.05306878 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.158653846 0.153389831 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 −7.595099843 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0.366101695 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.003335792 0 a_(ψSi) ⁽¹⁾ 0.039268266 −0.013700762 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 191.7159763 0 c_(ψSi) 13.26923077 16.01694915 a_(θLT) ⁽²⁾ −0.007476194 0 a_(θLT) ⁽¹⁾ −0.010867175 −0.053997369 b_(θLT) ⁽²⁾ 69.19378698 0 c_(θLT) −50.19230769 −50.59322034 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.629167148 −0.724576033 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0.521919406 d_(TSθLT) 0 0 d_(TEψSi) 0 −0.523966449 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.071831837 −3.228508418 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495

TABLE 39 Si (100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −15.6141248 −15.6141248 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.163309353 0.163309353 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −22.02440893 −22.02440893 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.325179856 0.325179856 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −248.4374004 −248.4374004 a_(TE) ⁽²⁾ −36.57127964 −36.57127964 a_(TE) ⁽¹⁾ 13.88180854 13.88180854 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0.000480119 0.000480119 b_(TE) ⁽²⁾ 0.020416128 0.020416128 c_(TE) 0.240647482 0.240647482 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002456326 0.002456326 a_(ψSi) ⁽¹⁾ 0.048553126 0.048553126 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 279.6050929 279.6050929 c_(ψSi) 22.3381295 22.3381295 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.005427275 0.005427275 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.35971223 −50.35971223 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 41.63149071 41.63149071 d_(TSψSi) −0.577179204 −0.577179204 d_(TSθLT) 0.603866778 0.603866778 d_(TEψSi) 0.134944598 0.134944598 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.703317679 −2.703317679 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495

TABLE 40 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 133.7896555 a_(TLT) ⁽¹⁾ −7.761727985 −9.701155851 b_(TLT) ⁽²⁾ 0 0.006281971 c_(TLT) 0.315508021 0.306914894 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.35135077 −6.186650236 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.297860963 0.298404255 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 110.8304316 0 a_(TE) ⁽¹⁾ 4.036561723 −8.229960495 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006431411 0 c_(TE) 0.140374332 0.363297872 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002534654 0.001652947 a_(ψSi) ⁽¹⁾ 0.024168138 −0.003241344 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 269.2484772 266.6845858 c_(ψSi) 21.4171123 20.26595745 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0 −0.066116428 b_(θLT) ⁽²⁾ 0 O c_(θLT) −90 −50.4787234 d_(TLTTS) 96.23533718 0 d_(TLTTE) −66.46866878 0 d_(TLTψSi) −0.404808481 −0.688053172 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −0.733337318 0 d_(TSθLT) 0 0 d_(TEψSi) 0.584322518 −0.372994212 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −3.679364607 −4.30794513 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495

TABLE 41 Si (110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −16.69742899 −16.69742899 −33.56520202 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.1675 0.1675 0.192857143 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 15.90196012 15.90196012 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.1525 0.1525 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 26.3030303 0 a_(TE) ⁽¹⁾ 0 0 −6.181053391 0 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006326531 0 c_(TE) 0 0 0.378571429 0 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ −0.000183963 −0.000183963 0 −0.000177142 a_(ψSi) ⁽²⁾ −0.003236307 −0.003236307 0 0.002186084 a_(ψSi) ⁽¹⁾ 0.071460688 0.071460688 0.085067773 0.13561432 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ −5768.71875 −5768.71875 0 2642.857143 b_(ψSi) ⁽²⁾ 399.9375 399.9375 0 500 c_(ψSi) 65.25 65.25 34.28571429 55 a_(θLT) ⁽²⁾ 0 0 0 −0.00533662 a_(θLT) ⁽¹⁾ 0 0 0.070255628 0.032718563 b_(θLT) ⁽²⁾ 0 0 0 65.75963719 c_(θLT) −90 −90 −51.42857143 −50.95238095 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 1.873870705 1.873870705 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0.716151515 0 d_(ψSiθLT) 0 0 −0.00729303 0.002110378 e −0.957101918 −0.957101918 −1.63492254 −1.290881853 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 42 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −23.96596978 −4.695531045 −7.344438725 −5.603099398 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.34 0.3296875 0.338983051 0.306666667 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −23.18485905 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.175555556 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −43.48595551 −70.50554427 −41.95412638 a_(TE) ⁽¹⁾ 0 −2.467954545 −5.460437635 −2.19025056 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006875 0.006716461 0.006819556 c_(TE) 0 0.15 0.365254237 0.360666667 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0.000119479 −0.000172812 a_(ψSi) ⁽²⁾ 0.018474062 0 0.003987724 0.002213009 a_(ψSi) ⁽¹⁾ 0.059131688 0 −0.047908658 0.073831446 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 −2384.203107 1647.952 b_(ψSi) ⁽²⁾ 81.55555556 0 216.791152 242.24 c_(ψSi) 35.33333333 0 30.76271186 62.6 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.009475371 0 0.026725166 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.3333333 −90 −49.83050847 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 42.3018696 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0.617240199 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 2.612107038 0 0 0 d_(TSθLT) 2.129359248 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.871101002 0 0 0 e −2.851861362 −2.210765625 −2.573237283 −2.440604203 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 43 Si (110) 0 ≤ T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −10.87353735 −17.74612134 −16.74814911 −16.74814911 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.167045455 0.158227848 0.168032787 0.168032787 a_(TS) ⁽²⁾ 92.14417413 275.6432031 0 0 a_(TS) ⁽¹⁾ −6.141913324 −0.713377524 −9.071522271 −9.071522271 b_(TS) ⁽²⁾ 0.004213585 0.004749239 0 0 c_(TS) 0.339772727 0.317721519 0.314754098 0.314754098 a_(TE) ⁽⁴⁾ 0 0 00 0 a_(TE) ⁽³⁾ 0 0 0 a_(TE) ⁽²⁾ −37.82699975 0 0 0 a_(TE) ⁽¹⁾ 4.315324766 3.259148162 −5.270739047 −5.270739047 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.007147469 0 0 0 c_(TE) 0.153409091 0.138607595 0.356557377 0.356557377 a_(ψSi) ⁽⁶⁾ 0 0 −3.73552E−09 −3.73552E−09 a_(ψSi) ⁽⁵⁾ 0 0 −4.69013E−08 −4.69013E−08 a_(ψSi) ⁽⁴⁾ 0 0 1.07773E−05 1.07773E−05 a_(ψSi) ⁽³⁾ 0.000254041 −0.00026684 5.64997E−05 5.64997E−05 a_(ψSi) ⁽²⁾ 0.00704637 0.003350583 −0.007526984 −0.007526984 a_(ψSi) ⁽¹⁾ −0.123432463 0.05687546 −0.035719404 −0.035719404 b_(ψSi) ⁽⁶⁾ 0 0 1801696668 1801696668 b_(ψSi) ⁽⁵⁾ 0 0 6726299.443 6726299.443 b_(ψSi) ⁽⁴⁾ 0 0 1035415.498 1035415.498 b_(ψSi) ⁽³⁾ −1197.310014 2539.305207 3573.665857 3573.665857 b_(ψSi) ⁽²⁾ 188.2457386 286.0358917 720.1088417 720.1088417 c_(ψSi) 28.125 63.60759494 48.19672131 48.19672131 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046748629 0.00460971 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −51.59090909 −50.75949367 −90 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 105.3055279 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 58.63016883 0 0 0 d_(TSψSi) 0.443510572 0.274149566 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.293912516 −0.280924747 0 0 d_(TEθLT) 0 0.457718571 0 0 d_(ψSiθLT) 0 −0.005165328 0 0 e −1.722804167 −2.484892701 −2.976959016 −2.976959016 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 44 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(LT) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 39.48011293 a_(TLT) ⁽¹⁾ −5.239160454 −5.820942031 −4.867344296 −2.496300587 b_(TLT) ⁽²⁾ 0 0 0 0.00654321 c_(TLT) 0.309375 0.302702703 0.286363636 0.288888889 a_(TS) ⁽²⁾ 24.40391167 40.38499201 0 40.45660337 a_(TS) ⁽¹⁾ −2.128595361 6.73354721 −3.626479228 −6.290401812 b_(TS) ⁽²⁾ 0.006013184 0.005624543 0 0.005617284 c_(TS) 0.3265625 0.275675676 0.31 0.272222222 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −51.46488975 0 0 a_(TE) ⁽¹⁾ −1.921891837 −0.509929613 −1.508039016 −0.870147512 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 b_(TE) ⁽²⁾ 0 0.006479182 0 0 c_(TE) 0.153125 0.147297297 0.341818182 0.351388889 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 −0.000165117 0 −9.55404E−05 a_(ψSi) ⁽²⁾ 0.000936051 0.00475603 0 0.002198207 a_(ψSi) ⁽¹⁾ −0.02141106 0.040196571 −0.017752634 0.036260775 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 2115.829763 0 1531.394676 b_(ψSi) ⁽²⁾ 246.9177246 196.5668371 0 199.8263889 c_(ψSi) 24.140625 57.97297297 21.13636364 60.41666667 a_(θLT) ⁽²⁾ 0 0 0 −0.003220943 a_(θLT) ⁽¹⁾ 0.023743346 0.023741003 0.038368027 0.005042496 b_(θLT) ⁽²⁾ 0 0 0 72.22222222 c_(θLT) −50.078125 −48.51351351 −50.81818182 −50 d_(TLTTS) 0 0 0 −43.45862557 d_(TLTTE) −35.16960363 −48.00382984 23.6423037 52.46703277 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 −0 0 0 d_(TEθLT) 0.234382842 0 0 −0.273892853 d_(ψSiθLT) 0 −0.00130658 −0.001221935 0 e −2.175330984 −2.239116787 −2.271294054 −2.496300587 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 45 Si (111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 16.07631847 20.22733656 30.72650306 27.83979251 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.145833333 0.1625 0.159574468 0.158695652 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 17.08812597 27.84866827 31.28009383 12.67453621 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.154166667 0.172916667 0.161702128 0.163043478 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −96.15629371 0 138.3065683 0 a_(TE) ⁽¹⁾ −1.263589744 2.883915191 −9.345807167 −7.807789594 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006649306 0 0.006229063 0 c_(TE) 0.170833333 0.14375 0.369148936 0.345652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 −0.006862727 a_(ψSi) ⁽¹⁾ −0.101535567 −0.012511908 −0.101466433 0.176438509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 114.9456522 c_(ψSi) 24.375 44.375 22.0212766 37.5 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) −477.9162005 −760.9473336 −1054.386561 −1044.340968 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 1.332405924 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 −250.1524613 102.33575 105.8611165 d_(TSψSi) 0 0 0 −2.093429604 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.613440559 0 1.201832187 −0.525734733 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.553295028 −1.074792989 −1.290770348 −1.165057152 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 46 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ −262.3995984 −262.3995984 0 0 a_(TLT) ⁽¹⁾ −59.70400634 −59.70400634 −18.45032018 −20.44479246 b_(TLT) ⁽²⁾ 0.004691358 0.004691358 0 0 c_(TLT) 0.355555556 0.355555556 0.332352941 0.331914894 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −73.33869606 −73.33869606 −9.963926388 24.5747574 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.185185185 0.185185185 0.166176471 0.165957447 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −19.84024877 −19.84024877 −8.905455835 −17.17093947 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.157407407 0.157407407 0.369117647 0.373404255 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ −4.69771E−05 −4.69771E−05 0 0 a_(ψSi) ⁽³⁾ −0.000362538 −0.000362538 0 0 a_(ψSi) ⁽²⁾ 0.055133453 0.055133453 −0.004320224 0.021125116 a_(ψSi) ⁽¹⁾ 0.020862911 0.020862911 −0.110606012 −0.064218508 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 138552.1512 138552.1512 0 0 b_(ψSi) ⁽³⁾ −78.36076818 −78.36076818 0 0 b_(ψSi) ⁽²⁾ 203.1635802 203.1635802 145.9775087 66.20642825 c_(ψSi) 33.05555556 33.05555556 19.41176471 34.46808511 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.079155699 −0.079155699 0 0.057672719 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.81481481 −49.81481481 −90 −49.14893617 d_(TLTTS) 0 0 0 0 d_(TLTTE) −254.5809235 −254.5809235 80.69948416 99.56817027 d_(TLTψSi) 2.260189055 2.260189055 0 0 d_(TLTθLT) −0.785540829 −0.785540829 0 0 d_(TSTE) −292.5762951 −292.5762951 0 0 d_(TSψSi) −5.914103654 −5.914103654 −1.139436429 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 1.75463008 1.75463008 0.660099875 −3.844659844 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0.006965097 e −1.304804416 −1.304804416 −2.734683251 −3.115044468 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 47 Si (111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0.003649147 0 0 0 a_(TLT) ⁽¹⁾ −17.27824731 −24.3903101 −38.65647339 −21.91795924 b_(TLT) ⁽²⁾ 67.18624026 0 0 0 c_(TLT) 0.154098361 0.15631068 0.17 0.1575 a_(TS) ⁽²⁾ 84.63185118 0 148.7691928 140.0125491 a_(TS) ⁽¹⁾ −6.307527081 −32.68184816 −15.38083251 −11.91949736 b_(TS) ⁽²⁾ 0.004461166 0 0.005012245 0.004623438 c_(TS) 0.352459016 0.345631068 0.331428571 0.33875 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 2.909874306 8.840975559 −16.54803788 −0.024546617 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.135245902 0.148058252 0.372857143 0.33125 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0.006216698 0 0 a_(ψSi) ⁽¹⁾ −0.068574135 −0.018885558 −0.187578295 0.122573316 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 147.1439344 0 0 c_(ψSi) 22.62295082 43.10679612 22.71428571 39.1875 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.023219728 0.047846607 0.097088558 0.096327065 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.16393443 −50.38834951 −50.42857143 −51.25 d_(TLTTS) 0 −144.763071 0 0 d_(TLTTE) 0 0 −161.23455326 0 d_(TLTψSi) −0.827435588 0 0 1.107475984 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 103.0553675 −65.68497311 0 d_(TSψSi) 0 −1.329400713 0.82928215 −0.646921162 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.681669875 0.653050787 0.676734069 0.936807034 d_(TEθLT) 0 0 0.481989709 0.52746173 d_(ψSiθLT) 0 0 0 0 e −1.560056382 −2.656750279 −2.259351603 −1.805786084 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 48 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 77.3065693 243.6937004 0 a_(TLT) ⁽¹⁾ −13.49335267 −9.878165228 −6.309863061 −12.90130633 b_(TLT) ⁽²⁾ 0 0.00674795 0.006522811 0 c_(TLT) 0.300961538 0.297350993 0.29858156 0.306818182 a_(TS) ⁽²⁾ 133.2691939 160.4037443 82.71737336 100.5491122 a_(TS) ⁽¹⁾ −9.215218873 −21.20902158 −9.283157312 −7.984268054 b_(TS) ⁽²⁾ 0.006618898 0.005353274 0.006382979 0.005704201 c_(TS) 0.314423077 0.303311258 0.3 0.311363636 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 90.39669198 0 0 a_(TE) ⁽¹⁾ 0.170720276 3.925569914 −15.08313602 −9.451928755 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 b_(TE) ⁽²⁾ 0 0.006615499 0 0 c_(TE) 0.15 0.147350993 0.363475177 0.346212121 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00740803 0 0 0 a_(ψSi) ⁽¹⁾ −0.220502432 0.083594751 −0.104344279 0.088096624 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 135.4659763 0 0 0 c_(ψSi) 20.76923077 43.70860927 17.87234043 41.47727273 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.017420386 −0.012240534 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.28846154 −50.26490066 −90 −90 d_(TLTTS) 149.298265 220.9283416 135.5319056 135.1493422 d_(TLTTE) 0 0 0 −65.38520659 d_(TLTψSi) 0 0 0 −0.663828772 d_(TLTθLT) −0.703824061 −0.739197646 0 0 d_(TSTE) 122.4270642 0 −94.62792088 0 d_(TSψSi) 0.714493384 −1.189155195 0 −1.017237669 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0.558597609 0 0 d_(TEθLT) 0.734424122 0.628956462 0 0 d_(ψSiθLT) −0.003900657 0.003268439 0 0 e −2.246432623 −2.691572945 −3.425676672 −3.236112132 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495

TABLE 49 Si (100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −5.687707928 −5.687707928 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.139506173 0.139506173 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 5.653643283 5.653643283 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148148148 0.148148148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −1.004369706 −1.004369706 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.255555556 0.255555556 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000197083 −0.000197083 a_(ψSi) ⁽²⁾ −0.003376583 −0.003376583 a_(ψSi) ⁽¹⁾ 0.118081927 0.118081927 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −379.4708632 −379.4708632 b_(ψSi) ⁽²⁾ 278.0521262 278.0521262 c_(ψSi) 23.14814815 23.14814815 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.128631041 0.128631041 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.32098765 −49.32098765 d_(TLTTS) 0 0 d_(TLTTE) 72.43278274 72.43278274 d_(TLTψSi) 0.604747502 0.604747502 d_(TLTθLT) −1.743618251 −1.743618251 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.994157261 0.994157261 d_(TEψSi) 0 0 d_(TEθLT) 0.280889881 0.280889881 d_(ψSiθLT) 0.003095822 0.003095822 e −5.638096455 −5.638096455 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 50 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 _(aTLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 7.809960834 4.249755245 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.30962963 0.302857143 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −0.800874586 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.150714286 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.563479635 9.07053135 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.148518519 0.353571429 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000160979 0 a_(ψSi) ⁽²⁾ −0.000757552 0.001332545 a_(ψSi) ⁽¹⁾ 0.095765615 0.003836714 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 384.7407407 0 b_(ψSi) ⁽²⁾ 278.2222222 285.0956633 c_(ψSi) 21.33333333 20.89285714 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.043185248 0.033521037 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50 −50.92857143 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.383208698 −0.220029295 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0.974573109 d_(TEψSi) 0 0 d_(TEθLT) 1.01389349 −1.078939399 d_(ψSiθLT) 0 0.002899732 e −5.569590226 −5.29442278 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 51 Si (100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 _(aTLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −11.51287 −11.51287 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.136328125 0.136328125 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 6.022608826 6.022608826 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.305859375 0.305859375 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −180.607873 −180.607873 a_(TE) ⁽²⁾ 1.347493816 −1.347493816 a_(TE) ⁽¹⁾ 4.841204365 4.841204365 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ −0.000227051 −0.000227051 b_(TE) ⁽²⁾ 0.019179688 0.019179688 c_(TE) 0.25625 0.25625 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001342794 −0.001342794 a_(ψSi) ⁽¹⁾ 0.25625 0.25625 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 275.7568359 275.7568359 c_(ψSi) 0.25625 0.25625 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.153688205 0.153688205 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.140625 −49.140625 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) −1.180623763 −1.180623763 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.41394071 0.41394071 d_(ψSiθLT) 0.003203013 0.003203013 e −4.433641408 −4.433641408 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 52 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 _(aTLT) ⁽²⁾ 119.666412 118.2359738 a_(TLT) ⁽¹⁾ 4.447768142 2.271979446 b_(TLT) ⁽²⁾ 0.006371047 0.00699901 c_(TLT) 0.31147541 0.30631068 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −3.805216895 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.298543689 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 117.8354557 121.7109482 a_(TE) ⁽¹⁾ 2.107193686 −0.578851453 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006775956 0.006610661 c_(TE) 0.15 0.35631068 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001658706 0 a_(ψSi) ⁽¹⁾ 0.005677734 0.003834195 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 272.5477022 0 c_(ψSi) 20.90163934 20.02427184 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.051921544 0.050011808 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.36065574 −48.93203883 d_(TLTTS) 0 0 d_(TLTTE) 61.26575286 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 −82.22932804 d_(TSψSi) 0 0 d_(TSθLT) 0 −0.470524678 d_(TEψSi) 0 0 d_(TEθLT) 0.904198722 −0.776132158 d_(ψSiθLT) 0.003410501 0.003906326 e −5.339814906 −5.463687811 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599

TABLE 53 Si (110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 _(aTLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −7.587457615 −7.587457615 −7.587457615 −7.587457615 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.174380165 0.174380165 0.174380165 0.174380165 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −3.979714537 −3.979714537 −3.979714537 −3.979714537 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.150413223 0.150413223 0.150413223 0.150413223 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −0.865040993 −0.865040993 −0.865040993 −0.865040993 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.245867769 0.245867769 0.245867769 0.245867769 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾  5.87537E−07  5.87537E−07  5.87537E−07  5.87537E−07 a_(ψSi) ⁽³⁾ −8.59015E−07 −8.59015E−07 −8.59015E−07 −8.59015E−07 a_(ψSi) ⁽²⁾ −0.001948222 −0.001948222 −0.001948222 −0.001948222 a_(ψSi) ⁽¹⁾ −0.027558032 −0.027558032 −0.027558032 −0.027558032 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 1129197.497 1129197.497 1129197.497 1129197.497 b_(ψSi) ⁽³⁾ −1524.372996 −1524.372996 −1524.372996 −1524.372996 b_(ψSi) ⁽²⁾ 776.3813947 776.3813947 776.3813947 776.3813947 c_(ψSi) 41.52892562 41.52892562 41.52892562 41.52892562 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.018744549 0.018744549 0.018744549 0.018744549 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.25619835 −49.25619835 −49.25619835 −49.25619835 d_(TLTTS) 140.6234074 140.6234074 140.6234074 140.6234074 d_(TLTTE) −25.20654793 −25.20654793 −25.20654793 −25.20654793 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.789519626 −1.789519626 −1.789519626 −1.789519626 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 54 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 _(aTLT) ⁽²⁾ 0 0 39.68139696 39.68139696 a_(TLT) ⁽¹⁾ −3.912934705 −3.912934705 −3.801935963 −3.801935963 b_(TLT) ⁽²⁾ 0 0 0.00692398 0.00692398 c_(TLT) 0.306451613 0.306451613 0.297857143 0.297857143 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 a_(TE) ⁽¹⁾ 1.912614784 1.912614784 −6.089810932 −6.089810932 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.148924731 0.148924731 0.347857143 0.347857143 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 8.78847E−06 8.78847E−06 a_(ψSi) ⁽²⁾ −0.0004718 −0.0004718 −0.000160567 −0.000160567 a_(ψSi) ⁽¹⁾ 0.003265633 0.003265633 −0.023574651 −0.023574651 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 2351.597668 2351.597668 b_(ψSi) ⁽²⁾ 847.4765869 847.4765869 880.2091837 880.2091837 c_(ψSi) 35.32258065 35.32258065 43.07142857 43.07142857 a_(θLT) ⁽²⁾ 0.005014741 0.005014741 0 0 a_(θLT) ⁽¹⁾ 0.023115164 0.023115164 0.030121011 0.030121011 b_(θLT) ⁽²⁾ 67.0626662 67.0626662 0 0 c_(θLT) −49.62365591 −49.62365591 −51.28571429 −51.28571429 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.125572529 0.125572529 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.563162206 0.563162206 −0.417002414 −0.417002414 d_(ψSiθLT) 0 0 0 0 e −2.002512986 −2.002512986 −2.550158637 −2.550158637 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 55 Si (110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 _(aTLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 2.992014692 2.992014692 −1.461725087 −1.461725087 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.156390977 0.156390977 0.155345912 0.155345912 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −9.089925228 −9.089925228 −1.247751383 −1.247751383 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.305263158 0.305263158 0.327672956 0.327672956 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −130.6388144 −130.6388144 a_(TE) ⁽¹⁾ 5.773590917 5.773590917 −0.010504162 −0.010504162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006662711 0.006662711 c_(TE) 0.166541353 0.166541353 0.341823899 0.341823899 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 1.03604E−05 1.03604E−05 a_(ψSi) ⁽²⁾ −0.000377109 −0.000377109 −0.000138558 −0.000138558 a_(ψSi) ⁽¹⁾ −0.013702515 −0.013702515 −0.028102653 −0.028102653 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 3096.349671 3096.349671 b_(ψSi) ⁽²⁾ 792.2381141 792.2381141 957.6361695 957.6361695 c_(ψSi) 41.39097744 41.39097744 43.20754717 43.20754717 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.015804666 0.015804666 0.028892246 0.028892246 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.32330827 −49.32330827 −49.62264151 −49.62264151 d_(TLTTS) 0 0 −44.5976835 −44.5976835 d_(TLTTE) 80.90186655 80.90186655 −150.2428298 −150.2428298 d_(TLTψSi) 0 0 0.225109644 0.225109644 d_(TLTθLT) 0 0 0 0 d_(TSTE) 29.68261053 29.68261053 47.35851038 47.35851038 d_(TSψSi) 0.136750854 0.136750854 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.146211814 −0.146211814 0 0 d_(TEθLT) 0.41229257 0.41229257 0 0 d_(ψSiθLT) 0 0 0 0 e −2.596813807 −2.596813807 −2.049341112 −2.049341112 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 56 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 _(aTLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.80791074 −2.80791074 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.3069869 0.3069869 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −5.618098986 −5.618098986 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.286462882 0.286462882 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −73.23839461 −73.23839461 a_(TE) ⁽¹⁾ 8.962154821 8.962154821 −5.710295136 −5.710295136 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007310763 0.007310763 c_(TE) 0.167467249 0.167467249 0.330930233 0.330930233 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.003677309 0.003677309 0 0 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 40.93886463 40.93886463 0 0 a_(θLT) ⁽²⁾ 0.00527863 0.00527863 0 0 a_(θLT) ⁽¹⁾ 0.008431458 0.008431458 0 0 b_(θLT) ⁽²⁾ 66.00179249 66.00179249 0 0 c_(θLT) −50.61135371 −50.61135371 −90 −90 d_(TLTTS) 63.6265441 63.6265441 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 57.20229582 57.20229582 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.098212695 −0.098212695 0 0 d_(TEθLT) 0.32576925 0.32576925 0 0 d_(ψSiθLT) 0 0 0 0 e −2.431352404 −2.431352404 −2.39032093 −2.39032093 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 57 Si (111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 _(aTLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −26.67263869 −6.49243933 −20.61574251 −21.06290014 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.15443038 0.175438596 0.160759494 0.156896552 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −7.971316395 7.232224634 −16.40433051 −3.920556446 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.14556962 0.133333333 0.144303797 0.144827586 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −110.7824708 −133.1826499 0 a_(TE) ⁽¹⁾ 12.77975858 10.04988717 5.027045348 −5.686378626 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006463527 0.006582278 0 c_(TE) 0.151265823 0.144736842 0.35 0.35862069 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 −0.007219474 0 a_(ψSi) ⁽¹⁾ 0.028716852 0.04192074 −0.016815807 0.008780601 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 125.0280404 0 c_(ψSi) 9.683544304 0 11.58227848 48.10344828 a_(θLT) ⁽²⁾ 0.01035547 0 0 0.014789077 a_(θLT) ⁽¹⁾ 0.162093889 0.106646805 0.164306798 0.04587348 b_(θLT) ⁽²⁾ 61.8811088 0 0 55.43995244 c_(θLT) −49.62025316 −50.35087719 −51.01265823 −51.20689655 d_(TLTTS) −609.1883956 −724.6623011 −297.9828576 −203.214973 d_(TLTTE) −215.420422 0 159.6303697 0 d_(TLTψSi) 0 −3.771938969 2.003207828 −2.014745526 d_(TLTθLT) 1.80686724 0 2.218853872 0 d_(TSTE) 0 −307.4269587 0 0 d_(TSψSi) 0 0 −1.097992723 0 d_(TSθLT) 1.985202008 0 2.104127874 0 d_(TEψSi) 0 0 −1.45135593 0 d_(TEθLT) −203.386471 1.145649707 0 0 d_(ψSiθLT) 2.42647485 0.004357557 0 0 e −5.019952207 −2.13826109 −3.235663805 −3.326865691 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 58 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 _(aTLT) ⁽²⁾ 0 45.51074293 −94.44342524 0 a_(TLT) ⁽¹⁾ 0.788515154 −3.454988617 −9.832405019 −3.192556866 b_(TLT) ⁽²⁾ 0 0.006485261 0.006459172 0 c_(TLT) 0.298058252 0.295238095 0.298461538 0.298913043 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −8.97795964 1.31344944 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.142718447 0.147619048 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 9.791468713 0.170587985 −0.71523762 −10.72534988 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.15776699 0.124603175 0.356153846 0.347826087 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0.003924448 0.001661439 0 0.00657999 a_(ψSi) ⁽¹⁾ 0.15776699 −0.024952541 0.02404454 −0.067389114 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 148.4588557 132.0861678 0 152.6937618 c_(ψSi) 15.29126214 46.9047619 14.19230769 43.04347826 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.06700163 0.042141715 0.055240362 0.061747926 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.73786408 −50.15873016 −49.76923077 −49.45652174 d_(TLTTS) 116.7290786 −78.78450728 0 0 d_(TLTTE) 0 85.46351406 −49.85282875 0 d_(TLTψSi) −0.70199108 0.445481139 0 0.604657146 d_(TLTθLT) −0.726496636 0 0 0 d_(TSTE) 0 −116.360096 0 0 d_(TSψSi) 0 −0.622709588 0 0 d_(TSθLT) 2.041329502 −0.339115637 0 0 d_(TEψSi) 0 0.20688896 0 0 d_(TEθLT) 0.774150432 0.439880407 −0.6608739 −1.068569294 d_(ψSiθLT) −0.005400114 0.002667922 −0.004937546 0.006290209 e −4.209434885 −1.791078273 −3.48174155 −3.934527612 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 59 Si (111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 _(aTLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −4.673850215 0 −8.8586067 −1.957300157 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.141509434 0 0.153125 0.16 a_(TS) ⁽²⁾ 82.42811022 0 87.42203531 0 a_(TS) ⁽¹⁾ −7.905282467 −4.948155925 −0.569845134 0.521030757 b_(TS) ⁽²⁾ 0.006949092 0 0.006037326 0 c_(TS) 0.294339623 0.314583333 0.297916667 0.285 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 53.51232744 −79.38404758 0 0 a_(TE) ⁽¹⁾ 10.58973083 10.26534018 8.135327356 −7.251553825 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006016376 0.005677083 0 0 c_(TE) 0.183962264 0.1375 0.336458333 0.37 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0.001429494 a_(ψSi) ⁽¹⁾ 0.010122468 0.039888924 −0.016592245 −0.004853684 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 145.6875 c_(ψSi) 11.88679245 48.4375 14.0625 45.75 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.005093912 0.011098836 0.047530531 0.04750516 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50 −50.4166667 −50.72916667 −49.75 d_(TLTTS) 0 0 91.19418307 251.5375225 d_(TLTTE) 0 0 −156.3654518 0 d_(TLTψSi) 0.322255595 0 0 −0.289820964 d_(TLTθLT) −0.768436344 0 −0.735737765 0 d_(TSTE) 0 75.51836907 0 0 d_(TSψSi) −0.512402643 0.300543357 −0.724013025 0.245746891 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.50556971 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0.002842264 0 0 e −2.770026639 −2.638591885 −1.980941925 −2.412296494 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 60 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.05 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 _(aTLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 4.449764983 0 −13.78321665 −10.59163435 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.321052632 0 0.309146341 0.303164557 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 −3.433673203 −1.746861763 3.363230821 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0.283443709 0.287804878 0.293037975 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 86.18383552 0 a_(TE) ⁽¹⁾ 3.853394073 8.768511808 −1.86755053 −15.6861606 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007157942 0 c_(TE) 0.181578947 0.135430464 0.356097561 0.363291139 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.014178515 0.049910217 −0.008697771 0.012742666 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 12.63157895 45.99337748 15.09146341 45 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0.061867934 0.051566965 0.028929641 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −50.59602649 −50.30487805 −50.56962025 d_(TLTTS) 0 0 0 −103.0440888 d_(TLTTE) 0 0 0 0 d_(TLTψSi) −0.181721459 0 0 0 d_(TLTθLT) 0 0 0 −0.608943868 d_(TSTE) 0 113.1914268 −75.04640382 −82.04954672 d_(TSψSi) 0 0 −0.554356722 0.673316097 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.512800103 0 d_(TEθLT) 0 0 −0.656702553 0 d_(ψSiθLT) 0 0 0 0 e −2.401219798 −3.18651044 −3.93030224 −4.143483981 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599

TABLE 61 Si (100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 _(aTLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −16.39135605 −16.39135605 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.196774194 0.196774194 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −4.824831305 −4.824831305 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.170967742 0.170967742 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −45.57608817 −45.57608817 a_(TE) ⁽¹⁾ −10.80005563 −10.80005563 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.018296046 0.018296046 c_(TE) 0.303225806 0.303225806 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000172048 0.000172048 a_(ψSi) ⁽²⁾ −0.00384923 −0.00384923 a_(ψSi) ⁽¹⁾ −0.009826773 −0.009826773 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 143.0843208 143.0843208 b_(ψSi) ⁽²⁾ 215.8688866 215.8688866 c_(ψSi) 22.25806452 22.25806452 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.066799879 0.066799879 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.16129032 −50.16129032 d_(TLTTS) 0 0 d_(TLTTE) −112.847682 −112.847682 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −1.750763196 −1.750763196 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.466692151 0.466692151 d_(ψSiθLT) 0 0 e −2.904746788 −2.904746788 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 62 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 _(aTLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −8.135537689 −8.135537689 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.311659193 0.311659193 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.38200282 −20.38200282 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.149327354 0.149327354 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.460675692 −3.460675692 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.267488789 0.267488789 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.003759233 −0.003759233 a_(ψSi) ⁽¹⁾ 0.015931998 0.015931998 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 239.0395946 239.0395946 c_(ψSi) 18.90134529 18.90134529 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.017576249 0.017576249 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.9103139 −49.9103139 d_(TLTTS) −152.1817236 −152.1817236 d_(TLTTE) 0 0 d_(TLTψSi) −0.359387178 −0.359387178 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.911415415 0.911415415 d_(TEψSi) 0 0 d_(TEθLT) 0.275815872 0.275815872 d_(ψSiθLT) 0 0 e −3.952626598 −3.952626598 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 63 Si (100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −26.36951471 −26.36951471 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.161538462 0.161538462 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −10.09828536 −10.09828536 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.321025641 0.321025641 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −21.38297597 −21.38297597 a_(TE) ⁽¹⁾ −2.383287449 −2.383287449 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.01947666 0.01947666 c_(TE) 0.270512821 0.270512821 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000176024 0.000176024 a_(ψSi) ⁽²⁾ −0.001397911 −0.001397911 a_(ψSi) ⁽¹⁾ −0.107515297 −0.107515297 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −282.3623122 −282.3623122 b_(ψSi) ⁽²⁾ 255.2071006 255.2071006 c_(ψSi) 23.84615385 23.84615385 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.085112984 0.085112984 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.97435897 −48.97435897 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.816828716 −0.816828716 T_(TLTθLT) 0.865519967 0.865519967 d_(TSTE) 0 0 d_(TSψSi) −0.538336559 −0.538336559 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.002971652 0.002971652 e −3.504362202 −3.504362202 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 64 Si (100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −6.371850196 −6.371850196 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.292192192 0.292192192 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −0.609606885 −0.609606885 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.2996997 0.2996997 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 0 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000224133 0.000224133 a_(ψSi) ⁽²⁾ −0.004048532 −0.004048532 a_(ψSi) ⁽¹⁾ −0.126847922 −0.126847922 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 1375.85979 1375.85979 b_(ψSi) ⁽²⁾ 281.2555799 281.2555799 c_(ψSi) 19.77477477 19.77477477 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.056146223 0.056146223 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.48948949 −49.48948949 d_(TLTTS) 94.47145497 94.47145497 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 T_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.568942451 −0.568942451 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.005654813 0.005654813 e −4.940340284 −4.940340284 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978

TABLE 65 Si (110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −11.04825287 −11.04825287 −11.04825287 −11.04825287 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.164705882 0.164705882 0.164705882 0.164705882 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.86806521 −12.86806521 −12.86806521 −12.86806521 a_(TE) ⁽¹⁾ 39.88235294 39.88235294 39.88235294 39.88235294 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.019258131 0.019258131 0.019258131 0.019258131 c_(TE) 0.286470588 0.286470588 0.286470588 0.286470588 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.000762445 −0.000762445 −0.000762445 −0.000762445 a_(ψSi) ⁽¹⁾ −0.031584918 −0.031584918 −0.031584918 −0.031584918 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 749.7716263 749.7716263 749.7716263 749.7716263 c_(ψSi) 52.58823529 52.58823529 52.58823529 52.58823529 a_(θLT) ⁽²⁾ −0.004115091 −0.004115091 −0.004115091 −0.004115091 a_(θLT) ⁽¹⁾ 0.023260981 0.023260981 0.023260981 0.023260981 b_(θLT) ⁽²⁾ 81.16262976 81.16262976 81.16262976 81.16262976 c_(θLT) −50.11764706 −50.11764706 −50.11764706 −50.11764706 d_(TLTTS) 0 0 0 0 d_(TLTTE) −32.35244505 −32.35244505 −32.35244505 −32.35244505 d_(TLTψSi) 0.348515389 0.348515389 0.348515389 0.348515389 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.000823202 0.000823202 0.000823202 0.000823202 e −1.678155024 −1.678155024 −1.678155024 −1.678155024 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 66 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 34.01092867 34.01092867 a_(TLT) ⁽¹⁾ −3.294448859 −3.294448859 −2.996122319 −2.996122319 b_(TLT) ⁽²⁾ 0 0 0.005572031 0.005572031 c_(TLT) 0.328378378 0.328378378 0.31344086 0.31344086 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 2.752851676 2.752851676 −1.564359965 −1.564359965 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.162837838 0.162837838 0.160752688 0.160752688 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −4.548790211 −4.548790211 −1.370514553 −1.370514553 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.165540541 0.165540541 0.355913978 0.355913978 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −7.03888E−08 −7.03888E−08 −3.78178E−08 −3.78178E−08 a_(ψSi) ⁽⁴⁾ 1.4265E−06 1.4265E−06 9.79065E−07 9.79065E−07 a_(ψSi) ⁽³⁾ 0.000180358 0.000180358 9.73597E−05 9.73597E−05 a_(ψSi) ⁽²⁾ −0.002681874 −0.002681874 −0.00192926 −0.00192926 a_(ψSi) ⁽¹⁾ −0.092266284 −0.092266284 −0.04329175 −0.04329175 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 11701030.08 11701030.08 24265475.25 24265475.25 b_(ψSi) ⁽⁴⁾ 1439156.296 1439156.296 1705613.393 1705613.393 b_(ψSi) ⁽³⁾ 1798.436559 1798.436559 6938.899332 6938.899332 b_(ψSi) ⁽²⁾ 930.5183985 930.5183985 1060.880593 1060.880593 c_(ψSi) 40.23648649 40.23648649 40.08064516 40.08064516 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046000242 0.046000242 0.001380272 0.001380272 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.52702703 −49.52702703 −50.05376344 −50.05376344 d_(TLTTS) −136.9978702 −136.9978702 −73.06084164 −73.06084164 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.096651605 0.096651605 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 −56.78924979 −56.78924979 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.081014811 0.081014811 0 0 d_(TEθLT) 0 0 −0.194432704 −0.194432704 d_(ψSiθLT) 0 0 0.000875955 0.000875955 e −2.543790382 −2.543790382 −2.964933907 −2.964933907 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 67 Si (110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −13.1565646 −13.1565646 −13.1565646 −13.1565646 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.179661017 0.179661017 0.179661017 0.179661017 a_(TS) ⁽²⁾ −54.97015257 −54.97015257 −54.97015257 −54.97015257 a_(TS) ⁽¹⁾ 1.195559996 1.195559996 1.195559996 1.195559996 b_(TS) ⁽²⁾ 0.006496856 0.006496856 0.006496856 0.006496856 c_(TS) 0.299435028 0.299435028 0.299435028 0.299435028 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.83875925 −12.83875925 −12.83875925 −12.83875925 a_(TE) ⁽¹⁾ −2.591177902 −2.591177902 −2.591177902 −2.591177902 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.02062115 0.02062115 0.02062115 0.02062115 c_(TE) 0.282768362 0.282768362 0.282768362 0.282768362 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 a_(ψSi) ⁽¹⁾ −0.016861509 −0.016861509 −0.016861509 −0.016861509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 c_(ψSi) 44.83050847 44.83050847 44.83050847 44.83050847 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020120147 0.020120147 0.020120147 0.020120147 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.50847458 −50.50847458 −50.50847458 −50.50847458 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0.250474306 0.250474306 0.250474306 0.250474306 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.031071552 0.031071552 0.031071552 0.031071552 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.687640015 −1.687640015 −1.687640015 −1.687640015 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 68 Si (110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −8.387315737 −8.387315737 −11.34973266 −6.017883428 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.313377926 0.313377926 0.291082803 0.294578313 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.140898252 0.140898252 3.107378473 2.287606243 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.299331104 0.299331104 0.277707006 0.296385542 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −1.209727849 −1.209727849 −4.259242642 −1.280235687 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.152006689 0.152006689 0.343630573 0.351204819 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −2.33027E−08 −2.33027E−08 0 0 a_(ψSi) ⁽⁴⁾ 7.78115E−07 7.78115E−07 0 0 a_(ψSi) ⁽³⁾ 5.59108E−05 5.59108E−05 −0.000194818 0 a_(ψSi) ⁽²⁾ −0.002410767 −0.002410767 0.000247924 0 a_(ψSi) ⁽¹⁾ −0.027662563 −0.027662563 0.12904143 −0.026766472 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 2083705.649 2083705.649 0 0 b_(ψSi) ⁽⁴⁾ 1386257.115 1386257.115 0 0 b_(ψSi) ⁽³⁾ −1267.41343 −1267.41343 1811.750092 0 b_(ψSi) ⁽²⁾ 895.5856198 895.5856198 293.105197 0 c_(ψSi) 42.14046823 42.14046823 19.39490446 67.95180723 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020067585 0.020067585 −0.011988832 0.032566601 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.73244147 −49.73244147 −49.61783439 −50.96385542 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 41.29194486 d_(TLTψSi) 0 0 −0.203585177 0.376861254 T_(TLTθLT) 0 0 −0.273779971 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 −0.20937463 d_(TSθLT) −0.349110894 −0.349110894 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.216865482 −0.216865482 0 0 d_(ψSiθLT) 0 0 0.00120304 0 e −2.390757235 −2.390757235 −2.548464154 −2.523994879 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 69 Si (111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −3.047618237 −3.047618237 −3.047618237 −3.047618237 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.160869565 0.160869565 0.160869565 0.160869565 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 11.21750437 11.21750437 11.21750437 11.21750437 a_(TE) ⁽²⁾ −3.666215654 −3.666215654 −3.666215654 −3.666215654 a_(TE) ⁽¹⁾ −0.035248162 −0.035248162 −0.035248162 −0.035248162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0.000381688 0.000381688 0.000381688 0.000381688 b_(TE) ⁽²⁾ 0.012589792 0.012589792 0.012589792 0.012589792 c_(TE) 0.245652174 0.245652174 0.245652174 0.245652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.003582211 −0.003582211 −0.003582211 −0.003582211 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 35.86956522 35.86956522 35.86956522 35.86956522 a_(θLT) ⁽²⁾ −0.000596775 −0.000596775 −0.000596775 −0.000596775 a_(θLT) ⁽¹⁾ 0.003385783 0.003385783 0.003385783 0.003385783 b_(θLT) ⁽²⁾ 77.88279773 77.88279773 77.88279773 77.88279773 c_(θLT) −47.82608696 −47.82608696 −47.82608696 −47.82608696 d_(TLTTS) 0 0 0 0 d_(TLTTE) −2.939323227 −2.939323227 −2.939323227 −2.939323227 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.000442922 −0.000442922 −0.000442922 −0.000442922 e −0.277577227 −0.277577227 −0.277577227 −0.277577227 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 70 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 6.03484153 6.03484153 6.03484153 6.03484153 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.183333333 0.183333333 0.183333333 0.183333333 a_(TE) ⁽⁴⁾ −215.3850281 −215.3850281 −215.3850281 −215.3850281 a_(TE) ⁽³⁾ 54.12265846 54.12265846 54.12265846 54.12265846 a_(TE) ⁽²⁾ 0.942905209 0.942905209 0.942905209 0.942905209 a_(TE) ⁽¹⁾ −1.08045121 −1.08045121 −1.08045121 −1.08045121 b_(TE) ⁽⁴⁾ 0.000339332 0.000339332 0.000339332 0.000339332 b_(TE) ⁽³⁾ 0.000317558 0.000317558 0.000317558 0.000317558 b_(TE) ⁽²⁾ 0.011265432 0.011265432 0.011265432 0.011265432 c_(TE) 0.211111111 0.211111111 0.211111111 0.211111111 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 10 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004526908 −0.004526908 −0.004526908 −0.004526908 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 27.5 27.5 27.5 27.5 a_(θLT) ⁽²⁾ −0.00046365 −0.00046365 −0.00046365 −0.00046365 a_(θLT) ⁽¹⁾ 0.005349146 0.005349146 0.005349146 0.005349146 b_(θLT) ⁽²⁾ 57.09876543 57.09876543 57.09876543 57.09876543 c_(θLT) −46.11111111 −46.11111111 −46.11111111 −46.11111111 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 45.80413521 45.80413521 45.80413521 45.80413521 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.071786246 −0.071786246 −0.071786246 −0.071786246 d_(ψSiθLT) −0.000425881 −0.000425881 −0.000425881 −0.000425881 e −0.446604617 −0.446604617 −0.446604617 −0.446604617 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 71 Si (111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.477108842 −2.477108842 −2.477108842 −2.477108842 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.137349398 0.137349398 0.137349398 0.137349398 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −0.488747927 −0.488747927 −0.488747927 −0.488747927 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.336144578 0.336144578 0.336144578 0.336144578 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −1.973253274 −1.973253274 −1.973253274 −1.973253274 a_(TE) ⁽¹⁾ −0.124870592 −0.124870592 −0.124870592 −0.124870592 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.017915517 0.017915517 0.017915517 0.017915517 c_(TE) 0.256024096 0.256024096 0.256024096 0.256024096 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 7.6083E−07 7.6083E−07 7.6083E−07 7.6083E−07 a_(ψSi) ⁽³⁾ 7.21121E−06 7.21121E−06 7.21121E−06 7.21121E−06 a_(ψSi) ⁽²⁾ −0.000857107 −0.000857107 −0.000857107 −0.000857107 a_(ψSi) ⁽¹⁾ −0.00490823 −0.00490823 −0.00490823 −0.00490823 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 105622.9088 105622.9088 105622.9088 105622.9088 b_(ψSi) ⁽³⁾ −217.2019476 −217.2019476 −217.2019476 −217.2019476 b_(ψSi) ⁽²⁾ 208.4409929 208.4409929 208.4409929 208.4409929 c_(ψSi) 30.54216867 30.54216867 30.54216867 30.54216867 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) 4.821777856 4.821777856 4.821777856 4.821777856 d_(TLTTE) −4.14067246 −4.14067246 −4.14067246 −4.14067246 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.024454063 0.024454063 0.024454063 0.024454063 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.240178915 −0.240178915 −0.240178915 −0.240178915 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

TABLE 72 Si (111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.380779889 0.380779889 0.380779889 0.380779889 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.285294118 0.285294118 0.285294118 0.285294118 a_(TE) ⁽⁴⁾ −165.3225345 −165.3225345 −165.3225345 −165.3225345 a_(TE) ⁽³⁾ 23.65923214 23.65923214 23.65923214 23.65923214 a_(TE) ⁽²⁾ 2.256295059 2.256295059 2.256295059 2.256295059 a_(TE) ⁽¹⁾ −0.292409126 −0.292409126 −0.292409126 −0.292409126 b_(TE) ⁽⁴⁾ 0.00051583 0.00051583 0.00051583 0.00051583 b_(TE) ⁽³⁾ 0.00070344 0.00070344 0.00070344 0.00070344 b_(TE) ⁽²⁾ 0.015017301 0.015017301 0.015017301 0.015017301 c_(TE) 0.220588235 0.220588235 0.220588235 0.220588235 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004846255 −0.004846255 −0.004846255 −0.004846255 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 29.55882353 29.55882353 29.55882353 29.55882353 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.00165846 0.00165846 0.00165846 0.00165846 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.52941176 −48.52941176 −48.52941176 −48.52941176 d_(TLTTS) −0.04933649 −0.04933649 −0.04933649 −0.04933649 d_(TLTTE) −0.021023839 −0.021023839 −0.021023839 −0.021023839 d_(TLTψSi) 0 0 0 0 T_(TLTθLT) 0 0 0 0 d_(TSTE) −7.074776252 −7.074776252 −7.074776252 −7.074776252 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.00049898 −0.00049898 −0.00049898 −0.00049898 e −0.3405485 −0.3405485 −0.3405485 −0.3405485 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978

The inventors of preferred embodiments of the present application variously changed the design parameters T_(LT), θ_(LT), T_(S), T_(E), T_(P), ψ_(Si), and T_(Si), and determined how the intensity of the response becoming the spurious response A, B, or C changed.

Note that the absolute value of S11 was calculated as the intensity of the response of the spurious response when the above parameters were changed. The smaller the value of the absolute value of S11 in decibel is, the greater the intensity of the response of the spurious response is. When calculating S11, the overlap width of the electrode fingers was 20λ and the number of pairs of the electrode fingers was 94 pairs, and S11 was obtained with the one pair electrode finger model of the two-dimensional finite element method.

Note that the IDT electrode has a structure in which the metal films were laminated in the order of Ti/Pt/Ti/Al from the lithium tantalate film side. The thickness of the IDT electrode was changed by varying the thickness of the Pt film. Further, the wavelength normalized film thickness T_(E) of the IDT electrode was calculated as the wavelength normalized film thickness in terms of aluminum thickness, using the mass of the entire IDT electrode estimated from the density of each metal film.

Spurious Response A

The acoustic wave resonator having the admittance characteristic shown in FIG. 2 is used as the reference structure. FIG. 3 to FIG. 8 are diagrams describing changes in the intensity S11 of the response of the spurious response A when the respective parameters are changed with respect to the reference structure. As described in FIG. 3 , the intensity S11 of the response of the spurious response A changes when the propagation direction in the single crystal Si layer ψ_(si) is changed within the range from about 0° to about 45° with respect to the reference structure.

Similarly, as described in FIG. 4 , the intensity S11 of the response of the spurious response A also changes when the wavelength normalized film thickness T_(LT) of the lithium tantalate film is changed.

Further, as described in FIG. 5 , the intensity S11 of the response of the spurious response A also changes when the cut angle (90°−θ_(LT)) of the lithium tantalate film is changed.

As described in FIG. 6 , the intensity S11 of the response of the spurious response A also changes when the wavelength normalized film thickness T_(S) of the SiO₂ film is changed.

As described in FIG. 7 , the intensity S11 of the response of the spurious response A also changes when the wavelength normalized film thickness T_(E), which is the thickness of the IDT electrode in terms of aluminum, is changed.

As described in FIG. 8 , the intensity S11 of the response of the spurious response A changes when the wavelength normalized film thickness T_(P) of the protection film defined by a silicon oxide film is changed.

From FIG. 3 to FIG. 8 , it is understood that the intensity of the response of the spurious response A may be adjusted by changing the parameters above. That is, by selecting the values of the parameters described above, the intensity of the response of the spurious response A may be reduced while maintaining the response of the main mode.

The inventors of preferred embodiments of the present application have discovered that I_(h) corresponding to the intensity of the response of the spurious response may be obtained by Formula (1) and the coefficients a, b, c, d, e, and f in Table 37 to Table 48, from the calculation results in FIG. 3 to FIG. 8 and the like.

The coefficients in Formula (1) have been discovered to be values described in Table 37 to Table 48 in accordance with the crystal orientation of the single crystal Si layer, the respective ranges of the wavelength normalized film thickness T_(LT) of the lithium tantalate film, the Euler angle θ_(LT) of the lithium tantalate film, the wavelength normalized film thickness T_(S) of the SiO₂ film, the wavelength normalized film thickness T_(E) of the IDT electrode, and the wavelength normalized film thickness T_(P) of the protection film, and the propagation direction ψ_(Si) in the single crystal Si layer. Thus, the conditions of T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) where I_(h1) corresponding to the intensity of the response of the spurious response A is greater than about −2.4 are determined.

In the composite filter device in which the plurality of acoustic wave filters are connected at one end, the intensity of the response of the spurious response is required to be greater than about −2.4 dB in S11. This is to make the influence negligible on the bandpass characteristic of another acoustic wave filter other than one acoustic wave filter. Typically, the ripple appearing in the pass band is required to be equal to or greater than about −0.8 dB from the viewpoint of ensuring the reception sensitivity in a mobile phone or the like. Meanwhile, it has been known that when the spurious response is present in the pass band of another acoustic wave filter, a ripple of approximately ⅓ of the intensity of the response of the spurious response is generated in the pass band of another filter. Accordingly, in order to make the ripple in the pass band equal to or greater than about −0.8 dB, the intensity S11 of the response of the spurious response may be set to be greater than about −2.4 dB.

With I_(h) for the spurious response A, the inequality I_(h)> about −2.4 is satisfied, and thus it is possible to effectively reduce or prevent the influence by the response of the spurious response A on the pass band of another acoustic wave filter. This will be described with reference to FIG. 9 to FIG. 12 .

FIG. 9 is a circuit diagram of a composite filter device according to a preferred embodiment of the present invention. In a composite filter device 10, a first acoustic wave filter 11 to a fourth acoustic wave filter 14 are connected in common on an antenna terminal 15 side. FIG. 10 is a circuit diagram of the first acoustic wave filter 11. The first acoustic wave filter 11 includes a plurality of series arm resonators S1 to S3 and a plurality of parallel arm resonators P1 and P2. That is, the first acoustic wave filter 11 is a ladder filter, for example. The series arm resonators S1 to S3 and the parallel arm resonators P1 and P2 are defined by the acoustic wave device 1 according to the preferred embodiment described above.

Note that, in the present invention, the circuit configuration of the acoustic wave filter including the acoustic wave device according to a preferred embodiment of the present invention is not limited thereto. For example, an acoustic wave filter including a longitudinally coupled resonator acoustic wave filter may be employed. In this case, the longitudinally coupled resonator acoustic wave filter may be an acoustic wave device according to a preferred embodiment of the present invention. Alternatively, the acoustic wave resonator connected to the longitudinally coupled resonator acoustic wave filter may be defined by an acoustic wave device according to a preferred embodiment of the present invention.

Note that the pass bands of the first acoustic wave filter 11 to the fourth acoustic wave filter 14 are referred to as a first pass band to a fourth pass band.

The first pass band is on the lowest frequency side, and the pass band is higher in the order of the second pass band, the third pass band, and the fourth pass band. That is, the pass bands satisfy the relation, first pass band<second pass band<third pass band<fourth pass band.

For a comparison, a composite filter device of a comparative example was prepared in which the first acoustic wave filter was configured in the same manner as in the preferred embodiment of the preferred embodiment described above, except that the acoustic wave resonator of the reference structure was used. FIG. 11A describes a filter characteristic of a first acoustic wave filter and a second acoustic wave filter in the composite filter device of the comparative example. The solid line indicates a filter characteristic of the first acoustic wave filter, and the dashed line indicates a filter characteristic of the second acoustic wave filter. A large ripple appears in the second pass band. This is because a large response appears due to the spurious response A of the acoustic wave resonator used in the first acoustic wave filter.

FIG. 11B is a graph showing the filter characteristic of the composite filter device according to a preferred embodiment of the present invention. The solid line indicates a filter characteristic of the first acoustic wave filter, and the dashed line indicates a filter characteristic of the second acoustic wave filter. Here, the first acoustic wave filter is defined by the acoustic wave device of the preferred embodiment described above. Accordingly, no large ripple appears in the second pass band. That is, no large ripple appears in the pass band of the second acoustic wave filter being another filter. Thus, the deterioration of the filter characteristic in the second acoustic wave filter is less likely to occur.

As described above, in the composite filter device according to the present preferred embodiment, the response of the spurious response A is reduced or prevented in the acoustic wave filter defined by the acoustic wave device according to the preferred embodiment of the present invention described above. Thus, it is possible to effectively reduce or prevent the deterioration of the filter characteristic of another acoustic wave filter having a higher pass band relative to the pass band of the one acoustic wave filter.

FIG. 12 is a graph showing the relationship between the wavelength normalized film thickness of the single crystal Si layer 2 and the intensity S11 of the response of spurious responses A, B, and C. As is apparent from FIG. 12 , the intensity of the response of each of spurious responses A, B, and C may be more effectively reduced or prevented when the inequality T_(Si)> about 20 is satisfied.

Spurious Response B

FIG. 13 is a graph showing the relationship between the propagation direction ψ_(Si) in the single crystal Si layer and the intensity S11 of the response of the spurious response B. As is apparent from FIG. 13 , the intensity S11 of the response of the spurious response B changes when ψ_(Si) is changed. Similarly, as described in FIG. 14 , the intensity S11 of the response of the spurious response B also changes when the wavelength normalized film thickness T_(LT) of the lithium tantalate film is changed. As described in FIG. 15 , the intensity S11 of the response of the spurious response B also changes when the cut angle (90°−θ_(LT)) of the lithium tantalate film is changed. As described in FIG. 16 , the intensity S11 of the response of the spurious response B also changes when the wavelength normalized film thickness T_(S) of the SiO₂ film is changed. Further, as described in FIG. 17 , the intensity S11 of the response of the spurious response B also changes when the wavelength normalized film thickness T_(E) of the IDT electrode in terms of aluminum is changed.

Still further, as described in FIG. 18 , the intensity S11 of the response of the spurious response B also changes when the wavelength normalized film thickness T_(P) of the protection film being a silicon oxide film is changed.

The coefficient values in Formula (1) for expressing I_(h2) corresponding to the intensity of the response of the spurious response B were obtained from the calculation results in FIG. 13 to FIG. 18 and the like as in the case of the spurious response A. I_(h2) corresponding to the intensity of the response of the spurious response B may be expressed when the coefficients in Formula (1) are determined as in Table 49 to Table 60 described above in accordance with the orientation (100), (110), or (111) of the single crystal Si layer, the respective ranges of the wavelength normalized film thickness T_(LT) of the lithium tantalate film, the Euler angle θ_(LT) of the lithium tantalate film, the wavelength normalized film thickness T_(S) of the SiO₂ film, the wavelength normalized film thickness T_(E) of the IDT electrode, the wavelength normalized film thickness T_(P) of the protection film, and the propagation direction ψ_(Si). The response of the spurious response B may be made sufficiently small by determining the conditions of T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) that make I_(h1) greater than about −2.4, and by making the inequality T_(Si)> about 20 be satisfied.

Spurious Response C

FIG. 19 is a graph showing the relationship between the propagation direction ψ_(Si) in the single crystal Si layer and the intensity S11 of the response of the spurious response C. As is apparent from FIG. 19 , the intensity S11 of the response of the spurious response C changes when ψ_(Si) is changed. Similarly, as described in FIG. 20 , the intensity S11 of the response of the spurious response C also changes when the wavelength normalized film thickness T_(LT) of the lithium tantalate film is changed. As described in FIG. 21 , the intensity S11 of the response of the spurious response C changes when the cut angle (90°−θ_(LT)) of the lithium tantalate film is changed. As described in FIG. 22 , the intensity S11 of the response of the spurious response C also changes when the wavelength normalized film thickness T_(S) of the SiO₂ film is changed. Further, as described in FIG. 23 , the intensity S11 of the response of the spurious response C also changes when the wavelength normalized film thickness T_(E) of the IDT electrode in terms of aluminum is changed.

Still further, as described in FIG. 24 , the intensity S11 of the response of the spurious response C also changes when the wavelength normalized film thickness T_(P) of the protection film being a silicon oxide film is changed.

The coefficient values in Formula (1) for expressing I_(h3) corresponding to the intensity of the response of the spurious response C were obtained from FIG. 19 to FIG. 24 and the like. That is, I_(h3) corresponding to the intensity of the response of the spurious response C may be expressed when the coefficients in Formula (1) are determined as in Table 61 to Table 72 described above in accordance with Si (100), (110), or (111), further, the respective ranges of the wavelength normalized film thickness T_(LT) of the lithium tantalate film, the Euler angle θ_(LT) of the lithium tantalate film, the wavelength normalized film thickness T_(S) of the SiO₂ film, the wavelength normalized film thickness T_(E) of the IDT electrode, the wavelength normalized film thickness T_(P) of the protection film, and the propagation direction ψ_(Si). The response of the spurious response C may be made sufficiently small by determining the conditions of T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) that make I_(h3) greater than about −2.4, and by making the inequality T_(Si)> about 20 be satisfied.

Preferably, the inequality I_(h)> about −2.4 is satisfied for all of the spurious responses A, B, and C. In this case, it is possible to effectively reduce or prevent the influence of the spurious responses A, B, and C on another acoustic wave filter. Alternatively, I_(h) for the spurious response A and the spurious response B, I_(h) for the spurious response A and the spurious response C, or I_(h) for the spurious response B and the spurious response C may satisfy the inequality I_(h)> about −2.4. In this case, it is possible to reduce or prevent the influence of two of the spurious responses A, B, and C.

Thickness of Lithium Tantalate Film

With the structures of preferred embodiments of the present invention, as described above, the spurious response tends to be confined in a portion where the SiO₂ film 3 and the lithium tantalate film 4 are laminated. However, the spurious response is less likely to be confined by making the thickness of the lithium tantalate film 4 equal to or less than about 3.5λ, for example, since the laminated portion of the SiO₂ film 3 and the lithium tantalate film 4 becomes thin.

More preferably, the film thickness of the lithium tantalate film 4 is equal to or less than about 2.5λ, for example, and in this case, the absolute value of the frequency temperature coefficient TCF may be made small. Further, preferably, the film thickness of the lithium tantalate film 4 is equal to or less than about 1.5λ, for example. In this case, the electromechanical coupling coefficient may easily be adjusted. Further, more preferably, the film thickness of the lithium tantalate film 4 is equal to or less than about 0.5λ, for example. In this case, the electromechanical coupling coefficient may be easily adjusted in a wide range.

Note that in Formula (1) described above:

-   -   a) The range of ψ_(Si) is 0°≤ψ_(Si)≤45° when Si (100) having the         Euler angles (φ_(Si)=0°±5°, θ_(Si)=0°±5°, ψ_(Si)) is preferably         used. Meanwhile, due to the symmetricity of the crystal         structure of Si (100), ψ_(Si) and ψ_(Si)±(n×90°) are synonymous         with each other (note that n=1, 2, 3 . . . ). Similarly, ψ_(Si)         and −ψ_(Si) are synonymous with each other;     -   b) The range of ψ_(Si) is 0°≤ψ_(Si)≤90° when Si (110) having the         Euler angles (φ_(Si)=−45°±5°, θ_(Si)=−90°±5°, ψ_(Si)) is used.         Meanwhile, due to the symmetricity of the crystal structure of         Si (110), ψ_(Si) and ψ_(Si)±(n×180°) are synonymous with each         other (note that n=1, 2, 3 . . . ). Similarly, ψ_(Si) and         −ψ_(Si) are synonymous with each other; and     -   C) The range of ψ_(Si) is 0°≤ψ_(Si)≤ about 60° when Si (111)         having the Euler angles (φ_(Si)=−45°±5°, θ_(Si)=−54.73561°±5°,         ψ_(Si)) is used. Meanwhile, due to the symmetricity of the         crystal structure of Si (111), ψ_(Si) and ψ_(Si)±(n×120°) are         synonymous with each other (note that n=1, 2, 3 . . . ).

Further, although the range of θ_(LT) is set to −180°<θ_(LT)≤ about 0°, θ_(LT) and θ_(LT)+180° may be treated as synonymous with each other.

In the present description, for example, when the Euler angles (within the range of 0°±5°, θ, within the range of 0°±15°) is cited, “within the range of 0°±5°” means “within the range of equal to or greater than −5° and equal to or less than +5°”, and “within the range of 0°±15°” means “within the range of equal to or greater than −15° and equal to or less than +15°”. In the present description, for example, “within the range of 0°±5°” may simply be denoted by “0°±5°”.

FIG. 25 is a graph showing the relationship between the film thickness of the LiTaO₃ film and the Q characteristic of an acoustic wave device in which a low acoustic velocity film made of SiO₂ film of thickness of about 0.35λ, and a piezoelectric film made of lithium tantalate having the Euler angles (0°, 140.0°, 0°) are laminated above a high acoustic velocity support substrate made of silicon. The vertical axis in FIG. 25 is a product of the Q factor and the fractional bandwidth (Δf) of the resonator. FIG. 26 is a graph showing the relationship between the film thickness of the LiTaO₃ film and the temperature coefficient of frequency TCF. FIG. 27 is a graph showing the relationship between the film thickness of the LiTaO₃ film and the acoustic velocity. From FIG. 25 , it is preferable that the film thickness of the LiTaO₃ film be equal to or less than about 3.5λ, for example. In this case, the Q factor becomes higher relative to the case where the film thickness of the LiTaO₃ film exceeds about 3.5λ. More preferably, the film thickness of the LiTaO₃ film is equal to or less than about 2.5λ, for example, in order to further increase the Q factor.

From FIG. 26 , when the film thickness of the LiTaO₃ film is equal to or less than about 2.5λ, the absolute value of the frequency temperature coefficient TCF may be made smaller than in the case where the film thickness of the LiTaO₃ film exceeds about 2.5λ. More preferably, the film thickness of the LiTaO₃ film is equal to or less than about 2λ, for example, and in that case, the absolute value of the frequency temperature coefficient TCF may be made equal to or less than about 10 ppm/° C. In order to reduce the absolute value of the frequency temperature coefficient TCF, it is further preferable that the film thickness of the LiTaO₃ film is reduced to equal to or less than about 1.5λ, for example.

From FIG. 27 , when the film thickness of the LiTaO₃ film exceeds about 1.5λ, the change in the acoustic velocity is extremely small.

Meanwhile, as described in FIG. 28 , the fractional bandwidth changes significantly when the film thickness of the LiTaO₃ film is in the range of equal to or greater than about 0.05λ and equal to or less than about 0.5λ. Accordingly, the electromechanical coupling coefficient may be adjusted in a wider range. In order to widen the adjustment range of the electromechanical coupling coefficient and the fractional bandwidth, therefore, it is preferable that the film thickness of the LiTaO₃ film is in a range of equal to or greater than about 0.05λ and equal to or less than about 0.5λ, for example.

FIG. 29 is a graph showing the relationship between the film thickness (λ) of the SiO₂ film and the acoustic velocity, and FIG. 30 is a graph showing the relationship between the film thickness (λ) of the SiO₂ film and the electromechanical coupling coefficient. Here, each of a silicon nitride film, an aluminum oxide film, and a diamond film was used as the high acoustic velocity film under the low acoustic velocity film made of SiO₂. The film thickness of the high acoustic velocity film was about 1.5λ. The acoustic velocity of the bulk wave in silicon nitride is about 6000 m/s, the acoustic velocity of the bulk wave in aluminum oxide is about 6000 m/s, and the acoustic velocity of the bulk wave in diamond is about 12800 m/s. As described in FIG. 29 and FIG. 30 , the electromechanical coupling coefficient and the acoustic velocity hardly change even when the material of the high acoustic velocity film and the film thickness of the SiO₂ film are changed. In particular, the electromechanical coupling coefficient hardly changes when the film thickness of the SiO₂ film is equal to or greater than about 0.1λ and equal to or less than about 0.5λ regardless of the material of the high acoustic velocity film. Further, from FIG. 29 , it is discovered that the acoustic velocity does not change when the film thickness of the SiO₂ film is equal to or greater than about 0.3λ and equal to or less than about 2λ, regardless of the material of the high acoustic velocity film. Accordingly, preferably, the film thickness of the low acoustic velocity film made of silicon oxide is equal to or less than about 2λ, and more preferably equal to or less than about 0.5λ, for example.

FIG. 31 to FIG. 33 are partially enlarged front sectional views for describing each of modifications of a preferred embodiment of the present invention in which the thickness of the protection film is partially different in the acoustic wave resonator. In each modification illustrated in FIG. 31 to FIG. 33 , the protection film 8 covers the lithium tantalate film 4, and the upper surface and the side surfaces of an electrode finger 5 a of the IDT electrode 5. In the modification illustrated in FIG. 31 , the thickness of the protection film 8 covering the side surfaces of the electrode finger 5 a is smaller than the thickness of the protection film 8 covering the upper surface of the electrode finger 5 a. In this case, the Q factor may be increased, and the electromechanical coupling coefficient may be increased. In more detail, since Qm of the protection film 8 is small, the Q of the acoustic wave resonator may be increased when the protection film 8 on the side surfaces of the electrode finger 5 a is thin. Accordingly, the loss of the acoustic wave filter may be reduced. Further, the difference in acoustic impedance between the portion where the electrode finger 5 a is provided and the gap between the electrode fingers 5 a becomes small when the protection film 8 is provided on the lithium tantalate film 4. With this, the electromechanical coupling coefficient is reduced. However, the electromechanical coupling coefficient may be increased when the thickness of the protection film 8 on the side surfaces of the electrode finger 5 a is small.

In the modification illustrated in FIG. 32 , on the other hand, the thickness of the protection film 8 on the lithium tantalate film 4 is smaller than the thickness of the protection film 8 covering the upper surface of the electrode finger 5 a. In this case as well, the electromechanical coupling coefficient may be increased. That is, the electromechanical coupling coefficient may be increased by reducing the thickness of the protection film 8 in the portion covering the lithium tantalate film 4.

In the modification illustrated in FIG. 33 , the thickness of the protection film 8 on the lithium tantalate film 4 is larger than the thickness of the protection film 8 covering the upper surface of the electrode finger 5 a. In this case, the electromechanical coupling coefficient may be reduced and a narrower band may be achieved.

FIG. 34 is a front sectional view for describing a modification of the acoustic wave resonator used in preferred embodiments of the present invention. The acoustic wave resonator of the present modification has the same or substantially the same configuration as that of the acoustic wave device 1 illustrated in FIG. 1A, except that the SiO₂ film 3 is not provided. As described above, the acoustic wave resonator used in preferred embodiments of the present invention may have a structure in which the lithium tantalate film 4 is directly laminated on the single crystal Si layer 2. In that case, the thickness of the SiO₂ film 3 is zero.

FIG. 35 is a front sectional view illustrating another modification of the acoustic wave resonator used in preferred embodiments of the present invention. In an acoustic wave device 1A, the protection film 8 is laminated on the upper surface of the electrode finger of the IDT electrode 5. The protection film 8 does not extend to the side surfaces of the electrode finger of the IDT electrode 5. As described above, the protection film 8 may be laminated on only the upper surface of the electrode finger.

FIG. 36 is a partially enlarged front sectional view for describing the structure in the case where the protection film 8 is a laminated film. The protection film 8 has a structure in which a first protection film layer 8 a, a second protection film layer 8 b, and a third protection film layer 8 c are laminated. As described above, the protection film 8 may be a laminated film including the plurality of protection film layers. In this case, the wavelength normalized film thickness T_(P) of the protection film 8 is obtained by the total sum of values, where each value is a product of a value obtained when the density of a protection film layer is divided by the density of silicon oxide and the wavelength normalized film thickness of the protection film layer. For example, when the first protection film layer 8 a has the density of d1 and the wavelength normalized film thickness of t1, the second protection film layer 8 b has the density of d2 and the wavelength normalized film thickness of t2, the third protection film layer 8 c has the density of d3 and the wavelength normalized film thickness of t3, and silicon oxide has the density of d0, the wavelength normalized film thickness T_(P) of the protection film 8 is expressed as T_(P)=(d1/d0)t1+(d2/d0)t2+(d3/d0)t3.

As illustrated in FIG. 37 , Si (100) means a substrate that is cut in a (100) plane orthogonal or substantially orthogonal to a crystal axis represented by the Miller index in the crystal structure of silicon having a diamond structure. Note that a crystallographically equivalent plane, such as Si (010), for example, is also included.

As illustrated in FIG. 38 , Si (110) means a substrate that is cut in a (110) plane orthogonal or substantially orthogonal to a crystal axis represented by the Miller index in the crystal structure of silicon having a diamond structure. Note that other crystallographically equivalent planes are also included.

As illustrated in FIG. 39 , Si (111) means a substrate that is cut in a (111) plane orthogonal or substantially orthogonal to a crystal axis represented by the Miller index in the crystal structure of silicon having a diamond structure. Note that other crystallographically equivalent planes are also included.

The acoustic wave device of each of the above-described preferred embodiments may be used as a component for such as the composite filter device in a high frequency front end circuit. An example of such high frequency front end circuit according to a preferred embodiment of the present invention will be described below.

FIG. 40 is a schematic configuration diagram of a communication apparatus including a high frequency front end circuit. A communication apparatus 240 includes an antenna 202, a high frequency front end circuit 230, and an RF signal processing circuit 203. The high frequency front end circuit 230 is connected to the antenna 202. The high frequency front end circuit 230 includes a composite filter device 210 and amplifiers 221 to 224. The composite filter device 210 includes a first filter 211 to a fourth filter 214. As the composite filter device 210, the above-described composite filter device according to the present preferred embodiment may be used. The composite filter device 210 includes an antenna common terminal 225 connected to the antenna 202. One terminal of each of the first filter 211 to the third filter 213 defining and functioning as reception filters and one terminal of the fourth filter 214 defining and functioning as a transmission filter are connected in common to the antenna common terminal 225. The output terminals of the first filter 211 to the third filter 213 are connected to the amplifiers 221 to 223, respectively. Further, the amplifier 224 is connected to an input terminal of the fourth filter 214.

The output terminals of the amplifiers 221 to 223 are connected to the RF signal processing circuit 203. An input terminal of the amplifier 224 is connected to the RF signal processing circuit 203.

The composite filter device according to the present preferred embodiment may be suitably used as the composite filter device 210 in the communication apparatus 240 described above.

The acoustic wave device according to a preferred embodiment of the present invention is preferably the above-described acoustic wave resonator. The acoustic wave filter according to a preferred embodiment of the present invention includes a plurality of resonators and at least one of the plurality of resonators may be defined by an acoustic wave device according to a preferred embodiment of the present invention.

The composite filter device according to the present preferred embodiment includes N band pass filters (N is two or more) having different pass bands as in the composite filter device 210 described above, and one terminal of each of the N band pass filters is connected in common on the antenna terminal side. In this case, at least one of the N band pass filters excluding the band pass filter having the highest pass band includes one or more acoustic wave resonators, and at least one of the one or more acoustic wave resonators may be an acoustic wave device according to a preferred embodiment of the present invention. In addition, in the N band pass filters, at least one of the band pass filters other than the acoustic wave filters including the acoustic wave device according to a preferred embodiment of the present invention may not be an acoustic wave filter. That is, the band pass filters connected in common may include a band pass filter other than an acoustic wave filter, such as an LC filter, for example. Preferably, N is three or more, for example, and the three or more band pass filters define the composite filter device for simultaneously transmitting and receiving signals of a plurality of communication bands. Further, the acoustic wave filter may be a ladder filter, for example.

The acoustic wave devices according to preferred embodiments of the present invention may each be used in various communication bands, and preferably, the pass band in the acoustic wave filter is a pass band of a communication band defined by the 3GPP standard.

The composite filter devices according to preferred embodiments of the present invention may include only a plurality of transmission filters, or may include a plurality of reception filters.

Preferred embodiments of the present invention may widely be used in a communication device, such as a mobile phone, for example, as a filter or a composite filter device, a front end circuit, and a communication apparatus applicable to a multi-band system.

While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims. 

What is claimed is:
 1. An acoustic wave device comprising: a silicon support substrate; a silicon oxide film laminated above the silicon support substrate; a lithium tantalate film laminated above the silicon oxide film; an IDT electrode including an electrode finger and being provided above the lithium tantalate film; and a protection film covering at least a portion of the IDT electrode; wherein when a wavelength determined by an electrode finger pitch of the IDT electrode is denoted by λ, a wavelength normalized film thickness of the lithium tantalate film is denoted by T_(LT), θ of an Euler angle of the lithium tantalate film is denoted by θ_(LT), a wavelength normalized film thickness of the silicon oxide film is denoted by T_(S), a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness being a product of a wavelength normalized film thickness of the IDT electrode and a value obtained when density of the IDT electrode is divided by density of aluminum is denoted by T_(E), a wavelength normalized film thickness of the protection film being a product of a value obtained when density of the protection film is divided by density of silicon oxide and a wavelength normalized film thickness which is a thickness of the protection film normalized by the wavelength λ is denoted by T_(P), a propagation direction in the silicon support substrate is denoted by ψ_(Si), and a wavelength normalized film thickness which is a thickness of the silicon support substrate normalized by the wavelength λ is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that a value represented by Formula (1) below is larger than about −2.4: $\begin{matrix} {{I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{S} - c_{T_{S}}} \right)} + {d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right)\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right)}};} & {{Formula}(1)} \end{matrix}$ where, coefficients a, b, c, d, e, and f in Formula (1) are values described in Table 1 to Table 12 below that are determined in accordance with a crystal orientation of the silicon support substrate and a range of T_(S), T_(LT), and ψ_(Si): TABLE 1 Si(100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 0 0 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0 0 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −5.857231176 −5.857231176 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148 0.148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −19.75255913 −19.75255913 a_(TE) ⁽¹⁾ −2.877583447 −2.877583447 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.022736 0.022736 c_(TE) 0.242 0.242 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.004788767 0.004788767 a_(ψSi) ⁽¹⁾ 0.024306207 0.024306207 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 81.81 81.81 c_(ψSi) 8.7 8.7 a_(θLT) ⁽²⁾ −0.008235936 −0.008235936 a_(θLT) ⁽¹⁾ −0.021048278 −0.021048278 b_(θLT) ⁽²⁾ 65.16 65.16 c_(θLT) −52.2 −52.2 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 T_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.786852571 −0.786852571 d_(TEψSi) 0 0 d_(TEθLT) −0.237034335 −0.237034335 d_(ψSiθLT) 0 0 e −1.499248378 −1.499248378 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495;

TABLE 2 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 125.5342427 a_(TLT) ⁽¹⁾ −13.43961051 −7.643409732 b_(TLT) ⁽²⁾ 0 0.006076558 c_(TLT) 0.329807692 0.321186441 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −11.80744788 −10.05306878 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.158653846 0.153389831 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 −7.595099843 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0.366101695 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.003335792 0 a_(ψSi) ⁽¹⁾ 0.039268266 −0.013700762 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 191.7159763 0 c_(ψSi) 13.26923077 16.01694915 a_(θLT) ⁽²⁾ −0.007476194 0 a_(θLT) ⁽¹⁾ −0.010867175 −0.053997369 b_(θLT) ⁽²⁾ 69.19378698 0 c_(θLT) −50.19230769 −50.59322034 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.629167148 −0.724576033 T_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0.521919406 d_(TSθLT) 0 0 d_(TEψSi) 0 −0.523966449 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.071831837 −3.228508418 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495;

TABLE 3 Si(100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −15.6141248 −15.6141248 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.163309353 0.163309353 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −22.02440893 −22.02440893 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.325179856 0.325179856 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −248.4374004 −248.4374004 a_(TE) ⁽²⁾ −36.57127964 −36.57127964 a_(TE) ⁽¹⁾ 13.88180854 13.88180854 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0.000480119 0.000480119 b_(TE) ⁽²⁾ 0.020416128 0.020416128 c_(TE) 0.240647482 0.240647482 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002456326 0.002456326 a_(ψSi) ⁽¹⁾ 0.048553126 0.048553126 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 279.6050929 279.6050929 c_(ψSi) 22.3381295 22.3381295 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.005427275 0.005427275 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.35971223 −50.35971223 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 T_(TLTθLT) 0 0 d_(TSTE) 41.63149071 41.63149071 d_(TSψSi) −0.577179204 −0.577179204 d_(TSθLT) 0.603866778 0.603866778 d_(TEψSi) 0.134944598 0.134944598 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −2.703317679 −2.703317679 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495;

TABLE 4 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 133.7896555 a_(TLT) ⁽¹⁾ −7.761727985 −9.701155851 b_(TLT) ⁽²⁾ 0 0.006281971 c_(TLT) 0.315508021 0.306914894 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.35135077 −6.186650236 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.297860963 0.298404255 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 110.8304316 0 a_(TE) ⁽¹⁾ 4.036561723 −8.229960495 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006431411 0 c_(TE) 0.140374332 0.363297872 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ 0.002534654 0.001652947 a_(ψSi) ⁽¹⁾ 0.024168138 −0.003241344 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 269.2484772 266.6845858 c_(ψSi) 21.4171123 20.26595745 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0 −0.066116428 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −90 −50.4787234 d_(TLTTS) 96.23533718 0 d_(TLTTE) −66.46866878 0 d_(TLTψSi) −0.404808481 −0.688053172 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −0.733337318 0 d_(TSθLT) 0 0 d_(TEψSi) 0.584322518 −0.372994212 d_(TEθLT) 0 0 d_(ψSiθLT) 0 0 e −3.679364607 −4.30794513 a_(TP) −111692 −111692 b_(TP) 19239 19239 c_(TP) −952.97 −952.97 d_(TP) 8.8027 8.8027 f_(TP) 1.0495 1.0495;

TABLE 5 Si(110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −16.69742899 −16.69742899 −33.56520202 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.1675 0.1675 0.192857143 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 15.90196012 15.90196012 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.1525 0.1525 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 26.3030303 0 a_(TE) ⁽¹⁾ 0 0 −6.181053391 0 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006326531 0 c_(TE) 0 0 0.378571429 0 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ −0.000183963 −0.000183963 0 −0.000177142 a_(ψSi) ⁽²⁾ −0.003236307 −0.003236307 0 0.002186084 a_(ψSi) ⁽¹⁾ 0.071460688 0.071460688 0.085067773 0.13561432 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ −5768.71875 −5768.71875 0 2642.857143 b_(ψSi) ⁽²⁾ 399.9375 399.9375 0 500 c_(ψSi) 65.25 65.25 34.28571429 55 a_(θLT) ⁽²⁾ 0 0 0 −0.00533662 a_(θLT) ⁽¹⁾ 0 0 0.070255628 0.032718563 b_(θLT) ⁽²⁾ 0 0 0 65.75963719 c_(θLT) −90 −90 −51.42857143 −50.95238095 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 1.873870705 1.873870705 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0.716151515 0 d_(ψSiθLT) 0 0 −0.00729303 0.002110378 e −0.957101918 −0.957101918 −1.63492254 −1.290881853 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

TABLE 6 Si(110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −23.96596978 −4.695531045 −7.344438725 −5.603099398 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.34 0.3296875 0.338983051 0.306666667 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −23.18485905 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.175555556 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −43.48595551 −70.50554427 −41.95412638 a_(TE) ⁽¹⁾ 0 −2.467954545 −5.460437635 −2.19025056 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006875 0.006716461 0.006819556 c_(TE) 0 0.15 0.365254237 0.360666667 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0.000119479 −0.000172812 a_(ψSi) ⁽²⁾ 0.018474062 0 0.003987724 0.002213009 a_(ψSi) ⁽¹⁾ 0.059131688 0 −0.047908658 0.073831446 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 −2384.203107 1647.952 b_(ψSi) ⁽²⁾ 81.55555556 0 216.791152 242.24 c_(ψSi) 35.33333333 0 30.76271186 62.6 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.009475371 0 0.026725166 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.3333333 −90 −49.83050847 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 42.3018696 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0.617240199 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 2.612107038 0 0 0 d_(TSθLT) 2.129359248 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.871101002 0 0 0 e −2.851861362 −2.210765625 −2.573237283 −2.440604203 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

TABLE 7 Si(110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −10.87353735 −17.74612134 −16.74814911 −16.74814911 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.167045455 0.158227848 0.168032787 0.168032787 a_(TS) ⁽²⁾ 92.14417413 275.6432031 0 0 a_(TS) ⁽¹⁾ −6.141913324 −0.713377524 −9.071522271 −9.071522271 b_(TS) ⁽²⁾ 0.004213585 0.004749239 0 0 c_(TS) 0.339772727 0.317721519 0.314754098 0.314754098 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −37.82699975 0 0 0 a_(TE) ⁽¹⁾ 4.315324766 3.259148162 −5.270739047 −5.270739047 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.007147469 0 0 0 c_(TE) 0.153409091 0.138607595 0.356557377 0.356557377 a_(ψSi) ⁽⁶⁾ 0 0 −3.73552E−09 −3.73552E−09 a_(ψSi) ⁽⁵⁾ 0 0 −4.69013E−08 −4.69013E−08 a_(ψSi) ⁽⁴⁾ 0 0 1.07773E−05 1.07773E−05 a_(ψSi) ⁽³⁾ 0.000254041 −0.00026684 5.64997E−05 5.64997E−05 a_(ψSi) ⁽²⁾ 0.00704637 0.003350583 −0.007526984 −0.007526984 a_(ψSi) ⁽¹⁾ −0.123432463 0.05687546 −0.035719404 −0.035719404 b_(ψSi) ⁽⁶⁾ 0 0 1801696668 1801696668 b_(ψSi) ⁽⁵⁾ 0 0 6726299.443 6726299.443 b_(ψSi) ⁽⁴⁾ 0 0 1035415.498 1035415.498 b_(ψSi) ⁽³⁾ −1197.310014 2539.305207 3573.665857 3573.665857 b_(ψSi) ⁽²⁾ 188.2457386 286.0358917 720.1088417 720.1088417 c_(ψSi) 28.125 63.60759494 48.19672131 48.19672131 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046748629 0.00460971 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −51.59090909 −50.75949367 −90 −90 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 105.3055279 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 58.63016883 0 0 0 d_(TSψSi) 0.443510572 0.274149566 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.293912516 −0.280924747 0 0 d_(TEθLT) 0 0.457718571 0 0 d_(ψSiθLT) 0 −0.005165328 0 0 e −1.722804167 −2.484892701 −2.976959016 −2.976959016 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

TABLE 8 Si(110) 0.2 < T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 39.48011293 a_(TLT) ⁽¹⁾ −5.239160454 −5.820942031 −4.867344296 −2.496300587 b_(TLT) ⁽²⁾ 0 0 0 0.00654321 c_(TLT) 0.309375 0.302702703 0.286363636 0.288888889 a_(TS) ⁽²⁾ 24.40391167 40.38499201 20 40.45660337 a_(TS) ⁽¹⁾ −2.128595361 −6.73354721 −3.626479228 −6.290401812 b_(TS) ⁽²⁾ 0.006013184 0.005624543 0 0.005617284 c_(TS) 0.3265625 0.275675676 0.31 0.272222222 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −51.46488975 0 0 a_(TE) ⁽¹⁾ −1.921891837 −0.509929613 −1.508039016 −0.870147512 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006479182 0 0 c_(TE) 0.153125 0.147297297 0.341818182 0.351388889 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 −0.000165117 0 −9.55404E−05 a_(ψSi) ⁽²⁾ 0.000936051 0.00475603 0 0.002198207 a_(ψSi) ⁽¹⁾ −0.02141106 0.040196571 −0.017752634 0.036260775 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 2115.829763 0 1531.394676 b_(ψSi) ⁽²⁾ 246.9177246 196.5668371 0 199.8263889 c_(ψSi) 24.140625 57.97297297 21.13636364 60.41666667 a_(θLT) ⁽²⁾ 0 0 0 −0.003220943 a_(θLT) ⁽¹⁾ 0.023743346 0.023741003 0.038368027 0.005042496 b_(θLT) ⁽²⁾ 0 0 0 72.22222222 c_(θLT) −50.078125 −48.51351351 −50.81818182 −50 d_(TLTTS) 0 0 0 −43.45862557 d_(TLTTE) −35.16960363 −48.00382984 23.6423037 52.46703277 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.234382842 0 0 −0.273892853 d_(ψSiθLT) 0 −0.00130658 −0.001221935 0 e −2.175330984 −2.239116787 −2.271294054 −2.496300587 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

TABLE 9 Si(111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 16.07631847 20.22733656 30.72650306 27.83979251 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.145833333 0.1625 0.159574468 0.158695652 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 17.08812597 27.84866827 31.28009383 12.67453621 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.154166667 0.172916667 0.161702128 0.163043478 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −96.15629371 0 138.3065683 0 a_(TE) ⁽¹⁾ −1.263589744 2.883915191 −9.345807167 −7.807789594 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006649306 0 0.006229063 0 c_(TE) 0.170833333 0.14375 0.369148936 0.345652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 −0.006862727 a_(ψSi) ⁽¹⁾ −0.101535567 −0.012511908 −0.101466433 0.176438509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 114.9456522 c_(ψSi) 24.375 44.375 22.0212766 37.5 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) −477.9162005 −760.9473336 −1054.386561 −1044.340968 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 1.332405924 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 −250.1524613 102.33575 105.8611165 d_(TSψSi) 0 0 0 −2.093429604 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.613440559 1.201832187 −0.525734733 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.553295028 −1.074792989 −1.290770348 −1.165057152 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

TABLE 10 Si(111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ −262.3995984 −262.3995984 0 0 a_(TLT) ⁽¹⁾ −59.70400634 −59.70400634 −18.45032018 −20.44479246 b_(TLT) ⁽²⁾ 0.004691358 0.004691358 0 0 c_(TLT) 0.355555556 0.355555556 0.332352941 0.331914894 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −73.33869606 −73.33869606 −9.963926388 −24.5747574 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.185185185 0.185185185 0.166176471 0.165957447 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −19.84024877 −19.84024877 −8.905455835 −17.17093947 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.157407407 0.157407407 0.369117647 0.373404255 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ −4.69771E−05 −4.69771E−05 0 0 a_(ψSi) ⁽³⁾ −0.000362538 −0.000362538 0 0 a_(ψSi) ⁽²⁾ 0.055133453 0.055133453 −0.004320224 0.021125116 a_(ψSi) ⁽¹⁾ 0.020862911 0.020862911 −0.110606012 −0.064218508 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 138552.1512 138552.1512 0 0 b_(ψSi) ⁽³⁾ −78.36076818 −78.36076818 0 0 b_(ψSi) ⁽²⁾ 203.1635802 203.1635802 145.9775087 66.20642825 c_(ψSi) 33.05555556 33.05555556 19.41176471 34.46808511 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.079155699 −0.079155699 000 0.057672719 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.81481481 −49.81481481 −90 −49.14893617 d_(TLTTS) 0 0 0 0 d_(TLTTE) −254.5809235 −254.5809235 80.69948416 99.56817027 d_(TLTψSi) 2.260189055 2.260189055 0 0 d_(TLTθLT) −0.785540829 −0.785540829 000 0 d_(TSTE) −292.5762951 −292.5762951 0 0 d_(TSψSi) −5.914103654 −5.914103654 −1.139436429 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 1.75463008 1.75463008 0.660099875 −3.844659844 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0.006965097 e −1.304804416 −1.304804416 −2.734683251 −3.115044468 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

TABLE 11 Si(111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0.003649147 0 0 0 a_(TLT) ⁽¹⁾ −17.27824731 −24.3903101 −38.65647339 −21.91795924 b_(TLT) ⁽²⁾ 67.18624026 0 0 0 c_(TLT) 0.154098361 0.15631068 0.17 0.1575 a_(TS) ⁽²⁾ 84.63185118 0 148.7691928 140.0125491 a_(TS) ⁽¹⁾ −6.307527081 −32.68184816 −15.38083251 −11.91949736 b_(TS) ⁽²⁾ 0.004461166 0 0.005012245 0.004623438 c_(TS) 0.352459016 0.345631068 0.331428571 0.33875 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 2.909874306 8.840975559 −16.54803788 −0.024546617 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.135245902 0.148058252 0.372857143 0.33125 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0.006216698 0 0 a_(ψSi) ⁽¹⁾ −0.068574135 −0.018885558 −0.187578295 0.122573316 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 147.1439344 0 0 c_(ψSi) 22.62295082 43.10679612 22.71428571 39.1875 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.023219728 0.047846607 0.097088558 0.096327065 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.16393443 −50.38834951 −50.42857143 −51.25 d_(TLTTS) 0 −144.763071 0 0 d_(TLTTE) 0 0 −161.23455326 0 d_(TLTψSi) −0.827435588 0 0 1.107475984 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 103.0553675 −65.68497311 0 d_(TSψSi) 0 −1.329400713 0.82928215 −0.646921162 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.681669875 0.653050787 0.676734069 0.936807034 d_(TEθLT) 0 0 0.481989709 0.52746173 d_(ψSiθLT) 0 0 0 0 e −1.560056382 −2.656750279 −2.259351603 −1.805786084 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;

and TABLE 12 Si(111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0 77.3065693 243.6937004 0 a_(TLT) ⁽¹⁾ −13.49335267 −9.878165228 −6.309863061 −12.90130633 b_(TLT) ⁽²⁾ 0 0.00674795 0.006522811 0 c_(TLT) 0.300961538 0.297350993 0.29858156 0.306818182 a_(TS) ⁽²⁾ 133.2691939 160.4037443 82.71737336 100.5491122 a_(TS) ⁽¹⁾ −9.215218873 −21.20902158 −9.283157312 −7.984268054 b_(TS) ⁽²⁾ 0.006618898 0.005353274 0.006382979 0.005704201 c_(TS) 0.314423077 0.303311258 0.3 0.311363636 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 90.39669198 0 0 a_(TE) ⁽¹⁾ 0.170720276 3.925569914 −15.08313602 −9.451928755 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006615499 0 0 c_(TE) 0.15 0.147350993 0.363475177 0.346212121 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00740803 0 0 0 a_(ψSi) ⁽¹⁾ −0.220502432 0.083594751 −0.104344279 0.088096624 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 135.4659763 0 0 0 c_(ψSi) 20.76923077 43.70860927 17.87234043 41.47727273 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ −0.017420386 −0.012240534 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.28846154 −50.26490066 −90 −90 d_(TLTTS) 149.298265 220.9283416 135.5319056 135.1493422 d_(TLTTE) 0 0 0 −65.38520659 d_(TLTψSi) 0 0 0 −0.663828772 d_(TLTθLT) −0.703824061 −0.739197646 0 0 d_(TSTE) 122.4270642 0 −94.62792088 0 d_(TSψSi) 0.714493384 −1.189155195 0 −1.017237669 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0.558597609 0 0 d_(TEθLT) 0.734424122 0.628956462 0 0 d_(ψSiθLT) −0.003900657 0.003268439 0 0 e −2.246432623 −2.691572945 −3.425676672 −3.236112132 a_(TP) −111692 −111692 −111692 −111692 b_(TP) 19239 19239 19239 19239 c_(TP) −952.97 −952.97 −952.97 −952.97 d_(TP) 8.8027 8.8027 8.8027 8.8027 f_(TP) 1.0495 1.0495 1.0495 1.0495;


2. The acoustic wave device according to claim 1, wherein the wavelength normalized film thickness T_(Si) of the silicon support substrate is greater than about
 20. 3. The acoustic wave device according to claim 1, wherein a thickness of the lithium tantalate film is equal to or less than about 3.5λ.
 4. The acoustic wave device according to claim 1, wherein the protection film covers the lithium tantalate film and a side surface and an upper surface of the electrode finger of the IDT electrode, and a thickness of the protection film on the side surface of the electrode finger is smaller than a thickness of the protection film covering the upper surface of the electrode finger.
 5. The acoustic wave device according to claim 1, wherein the protection film covers the lithium tantalate film and a side surface and an upper surface of the electrode finger of the IDT electrode, and a thickness of the protection film on the lithium tantalate film is smaller than a thickness of the protection film covering the upper surface of the electrode finger.
 6. The acoustic wave device according to claim 1, wherein the protection film covers the lithium tantalate film and an upper surface and a side surface of the IDT electrode, and a thickness of the protection film on the lithium tantalate film is larger than a thickness of the protection film covering the upper surface of the electrode finger.
 7. The acoustic wave device according to claim 1, wherein the acoustic wave device is an acoustic wave resonator.
 8. An acoustic wave filter comprising: a plurality of resonators; wherein at least one of the plurality of resonators is defined by the acoustic wave device according to claim
 1. 9. A composite filter device comprising: N band pass filters having different pass bands where N is two or more; wherein one terminal of each of the N band pass filters is connected in common on an antenna terminal side; at least one of the N band pass filters excluding a band pass filter having a highest pass band includes one or more acoustic wave resonators; and at least one of the one or more acoustic wave resonators is the acoustic wave device according to claim
 1. 10. The composite filter device according to claim 9, wherein N is three or more, and the three or more band pass filters simultaneously transmit and receive signals of a plurality of communication bands.
 11. The composite filter device according to claim 9, wherein N is three or more, and at least one of the three or more band pass filters is a ladder filter.
 12. The acoustic wave device according to claim 2, wherein a thickness of the lithium tantalate film is equal to or less than about 3.5λ.
 13. An acoustic wave device comprising: a silicon support substrate; a silicon oxide film laminated above the silicon support substrate; a lithium tantalate film laminated above the silicon oxide film; an IDT electrode including an electrode finger and being provided above the lithium tantalate film; and a protection film covering at least a portion of the IDT electrode; wherein when a wavelength determined by an electrode finger pitch of the IDT electrode is denoted by λ, a wavelength normalized film thickness of the lithium tantalate film is denoted by T_(LT), θ of an Euler angle of the lithium tantalate film is denoted by θ_(LT), a wavelength normalized film thickness of the silicon oxide film is denoted by T_(S), a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness being a product of a wavelength normalized film thickness of the IDT electrode and a value obtained when density of the IDT electrode is divided by density of aluminum is denoted by T_(E), a wavelength normalized film thickness of the protection film being a product of a value obtained when density of the protection film is divided by density of silicon oxide and a wavelength normalized film thickness which is a thickness of the protection film normalized by the wavelength λ, is denoted by T_(P), a propagation direction in the silicon support substrate is denoted by ψ_(Si), and a wavelength normalized film thickness which is a thickness of the silicon support substrate normalized by the wavelength λ, is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that a value represented by Formula (1) below is larger than about −2.4; $\begin{matrix} {{I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{S} - c_{T_{S}}} \right)} + {d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right)\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right)}};} & {{Formula}(1)} \end{matrix}$ where, coefficients a, b, c, d, e, and fin Formula (1) are values described in Table 13 to Table 24 below that are determined in accordance with a crystal orientation of the silicon support substrate and a range of T_(S), T_(LT), and ψ_(Si): TABLE 13 Si(100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −5.687707928 −5.687707928 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.139506173 0.139506173 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 5.653643283 5.653643283 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.148148148 0.148148148 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −1.004369706 −1.004369706 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.255555556 0.255555556 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000197083 −0.000197083 a_(ψSi) ⁽²⁾ −0.003376583 −0.003376583 a_(ψSi) ⁽¹⁾ 0.118081927 0.118081927 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −379.4708632 −379.4708632 b_(ψSi) ⁽²⁾ 278.0521262 278.0521262 c_(ψSi) 23.14814815 23.14814815 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.128631041 0.128631041 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.32098765 −49.32098765 d_(TLTTS) 0 0 d_(TLTTE) 72.43278274 72.43278274 d_(TLTψSi) 0.604747502 0.604747502 d_(TLTθLT) −1.743618251 −1.743618251 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.994157261 0.994157261 d_(TEψSi) 0 0 d_(TEθLT) 0.280889881 0.280889881 d_(ψSiθLT) 0.003095822 0.003095822 e −5.638096455 −5.638096455 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599;

TABLE 14 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) < 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ 7.809960834 4.249755245 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.30962963 0.302857143 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 0 −0.800874586 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.150714286 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.563479635 9.07053135 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.148518519 0.353571429 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ −0.000160979 0 a_(ψSi) ⁽²⁾ −0.000757552 0.001332545 a_(ψSi) ⁽¹⁾ 0.095765615 0.003836714 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 384.7407407 0 b_(ψSi) ⁽²⁾ 278.2222222 285.0956633 c_(ψSi) 21.33333333 20.89285714 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.043185248 0.033521037 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50 −50.92857143 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.383208698 −0.220029295 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0.974573109 d_(TEψSi) 0 0 d_(TEθLT) 1.01389349 −1.078939399 d_(ψSiθLT) 0 0.002899732 e −5.569590226 −5.29442278 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599;

TABLE 15 Si(100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −11.51287 −11.51287 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.136328125 0.136328125 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ 6.022608826 6.022608826 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.305859375 0.305859375 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ −180.607873 −180.607873 a_(TE) ⁽²⁾ −1.347493816 −1.347493816 a_(TE) ⁽¹⁾ 4.841204365 4.841204365 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ −0.000227051 −0.000227051 b_(TE) ⁽²⁾ 0.019179688 0.019179688 c_(TE) 0.25625 0.25625 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001342794 −0.001342794 a_(ψSi) ⁽¹⁾ 0.25625 0.25625 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 275.7568359 275.7568359 c_(ψSi) 0.25625 0.25625 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.153688205 0.153688205 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.140625 −49.140625 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) −1.180623763 −1.180623763 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.41394071 0.41394071 d_(ψSiθLT) 0.003203013 0.003203013 e −4.433641408 −4.433641408 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599;

TABLE 16 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 119.666412 118.2359738 a_(TLT) ⁽¹⁾ 4.447768142 2.271979446 b_(TLT) ⁽²⁾ 0.006371047 0.00699901 c_(TLT) 0.31147541 0.30631068 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −3.805216895 b_(TS) ⁽²⁾ 0 0 c_(TS) 0 0.298543689 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 117.8354557 121.7109482 a_(TE) ⁽¹⁾ 2.107193686 −0.578851453 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.006775956 0.006610661 c_(TE) 0.15 0.35631068 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.001658706 0 a_(ψSi) ⁽¹⁾ 0.005677734 0.003834195 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 272.5477022 0 c_(ψSi) 20.90163934 20.02427184 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.051921544 0.050011808 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.36065574 −48.93203883 d_(TLTTS) 0 0 d_(TLTTE) 61.26575286 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 −82.22932804 d_(TSψSi) 0 0 d_(TSθLT) 0 −0.470524678 d_(TEψSi) 0 0 d_(TEθLT) 0.904198722 −0.776132158 d_(ψSiθLT) 0.003410501 0.003906326 e −5.339814906 −5.463687811 a_(TP) 0 0 b_(TP) 0 0 c_(TP) −15.448 −15.448 d_(TP) −2.9188 −2.9188 f_(TP) 1.0599 1.0599;

TABLE 17 Si(110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −7.587457615 −7.587457615 −7.587457615 −7.587457615 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.174380165 0.174380165 0.174380165 0.174380165 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −3.979714537 −3.979714537 −3.979714537 −3.979714537 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.150413223 0.150413223 0.150413223 0.150413223 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −0.865040993 −0.865040993 −0.865040993 −0.865040993 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.245867769 0.245867769 0.245867769 0.245867769 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾  5.87537E−07  5.87537E−07  5.87537E−07  5.87537E−07 a_(ψSi) ⁽³⁾ −8.59015E−07 −8.59015E−07 −8.59015E−07 −8.59015E−07 a_(ψSi) ⁽²⁾ −0.001948222 −0.001948222 −0.001948222 −0.001948222 a_(ψSi) ⁽¹⁾ −0.027558032 −0.027558032 −0.027558032 −0.027558032 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 1129197.497 1129197.497 1129197.497 1129197.497 b_(ψSi) ⁽³⁾ −1524.372996 −1524.372996 −1524.372996 −1524.372996 b_(ψSi) ⁽²⁾ 776.3813947 776.3813947 776.3813947 776.3813947 c_(ψSi) 41.52892562 41.52892562 41.52892562 41.52892562 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.018744549 0.018744549 0.018744549 0.018744549 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.25619835 −49.25619835 −49.25619835 −49.25619835 d_(TLTTS) 140.6234074 140.6234074 140.6234074 140.6234074 d_(TLTTE) −25.20654793 −25.20654793 −25.20654793 −25.20654793 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.789519626 −1.789519626 −1.789519626 −1.789519626 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

TABLE 18 Si(110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 39.68139696 39.68139696 a_(TLT) ⁽¹⁾ −3.912934705 −3.912934705 −3.801935963 −3.801935963 b_(TLT) ⁽²⁾ 0 0 0.00692398 0.00692398 c_(TLT) 0.306451613 0.306451613 0.297857143 0.297857143 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 1.912614784 1.912614784 −6.089810932 −6.089810932 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.148924731 0.148924731 0.347857143 0.347857143 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 8.78847E−06 8.78847E−06 a_(ψSi) ⁽²⁾ −0.0004718 −0.0004718 −0.000160567 −0.000160567 a_(ψSi) ⁽¹⁾ 0.003265633 0.003265633 −0.023574651 −0.023574651 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 2351.597668 2351.597668 b_(ψSi) ⁽²⁾ 847.4765869 847.4765869 880.2091837 880.2091837 c_(ψSi) 35.32258065 35.32258065 43.07142857 43.07142857 a_(θLT) ⁽²⁾ 0.005014741 0.005014741 0 0 a_(θLT) ⁽¹⁾ 0.023115164 0.023115164 0.030121011 0.030121011 b_(θLT) ⁽²⁾ 67.0626662 67.0626662 0 0 c_(θLT) −49.62365591 −49.62365591 −51.28571429 −51.28571429 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.125572529 0.125572529 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0.563162206 0.563162206 −0.417002414 −0.417002414 d_(ψSiθLT) 0 0 0 0 e −2.002512986 −2.002512986 −2.550158637 −2.550158637 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

TABLE 19 Si(110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 2.992014692 2.992014692 −1.461725087 −1.461725087 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.156390977 0.156390977 0.155345912 0.155345912 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −9.089925228 −9.089925228 −1.247751383 −1.247751383 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.305263158 0.305263158 0.327672956 0.327672956 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −130.6388144 −130.6388144 a_(TE) ⁽¹⁾ 5.773590917 5.773590917 −0.010504162 −0.010504162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.006662711 0.006662711 c_(TE) 0.166541353 0.166541353 0.341823899 0.341823899 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 1.03604E−05 1.03604E−05 a_(ψSi) ⁽²⁾ −0.000377109 −0.000377109 −0.000138558 −0.000138558 a_(ψSi) ⁽¹⁾ −0.013702515 −0.013702515 −0.028102653 −0.028102653 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 3096.349671 3096.349671 b_(ψSi) ⁽²⁾ 792.2381141 792.2381141 957.6361695 957.6361695 c_(ψSi) 41.39097744 41.39097744 43.20754717 43.20754717 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.015804666 0.015804666 0.028892246 0.028892246 b_(θLT) ⁽²⁾ 0 0 0 c_(θLT) −49.32330827 −49.32330827 −49.62264151 −49.62264151 d_(TLTTS) 0 0 −44.5976835 −44.5976835 d_(TLTTE) 80.90186655 80.90186655 −150.2428298 −150.2428298 d_(TLTψSi) 0 0 0.225109644 0.225109644 d_(TLTθLT) 0 0 0 0 d_(TSTE) 29.68261053 29.68261053 47.35851038 47.35851038 d_(TSψSi) 0.136750854 0.136750854 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.146211814 −0.146211814 0 0 d_(TEθLT) 0.41229257 0.41229257 0 0 d_(ψSiθLT) 0 0 0 0 e −2.596813807 −2.596813807 −2.049341112 −2.049341112 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

TABLE 20 Si(110) 0.2 ≤ T_(LT) ≤ 3 .5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 0 ≤ ψ_(Si) < 45 45 ≤ ψ_(Si) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.80791074 −2.80791074 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.3069869 0.3069869 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −5.618098986 −5.618098986 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.286462882 0.286462882 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 −73.23839461 −73.23839461 a_(TE) ⁽¹⁾ 8.962154821 8.962154821 −5.710295136 −5.710295136 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007310763 0.007310763 c_(TE) 0.167467249 0.167467249 0.330930233 0.330930233 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.003677309 0.003677309 0 0 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 40.93886463 40.93886463 0 0 a_(θLT) ⁽²⁾ 0.00527863 0.00527863 0 0 a_(θLT) ⁽¹⁾ 0.008431458 0.008431458 0 0 b_(θLT) ⁽²⁾ 66.00179249 66.00179249 0 0 c_(θLT) −50.61135371 −50.61135371 −90 −90 d_(TLTTS) 63.6265441 63.6265441 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 57.20229582 57.20229582 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) −0.098212695 −0.098212695 0 0 d_(TEθLT) 0.32576925 0.32576925 0 0 d_(ψSiθLT) 0 0 0 0 e −2.431352404 −2.431352404 −2.39032093 −2.39032093 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

TABLE 21 Si(111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.0 5 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −26.67263869 −6.49243933 −20.61574251 −21.06290014 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.15443038 0.175438596 0.160759494 0.156896552 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −7.971316395 7.232224634 −16.40433051 −3.920556446 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.14556962 0.133333333 0.144303797 0.144827586 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 −110.7824708 −133.1826499 0 a_(TE) ⁽¹⁾ 12.77975858 −10.04988717 5.027045348 −5.686378626 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0.006463527 0.006582278 0 c_(TE) 0.151265823 0.144736842 0.35 0.35862069 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 −0.007219474 0 a_(ψSi) ⁽¹⁾ 0.028716852 0.04192074 −0.016815807 0.008780601 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 125.0280404 0 c_(ψSi) 9.683544304 50 11.58227848 48.10344828 a_(θLT) ⁽²⁾ 0.01035547 0 0 0.014789077 a_(θLT) ⁽¹⁾ 0.162093889 0.106646805 0.164306798 0.04587348 b_(θLT) ⁽²⁾ 61.8811088 0 0 55.43995244 c_(θLT) −49.62025316 −50.35087719 −51.01265823 −51.20689655 d_(TLTTS) −609.1883956 −724.6623011 −297.9828576 −203.214973 d_(TLTTE) −215.420422 0 159.6303697 0 d_(TLTψSi) 0 −3.771938969 2.003207828 −2.014745526 d_(TLTθLT) 1.80686724 0 2.218853872 0 d_(TSTE) 0 −307.4269587 0 0 d_(TSψSi) 0 0 −1.097992723 0 d_(TSθLT) 1.985202008 0 2.104127874 0 d_(TEψSi) 0 0 −1.45135593 0 d_(TEθLT) −203.386471 1.145649707 0 0 d_(ψSiθLT) 2.42647485 0.004357557 0 0 e −5.019952207 −2.13826109 −3.235663805 −3.326865691 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

TABLE 22 Si(111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 45.51074293 −94.44342524 0 a_(TLT) ⁽¹⁾ 0.788515154 −3.454988617 −9.832405019 −3.192556866 b_(TLT) ⁽²⁾ 0 0.006485261 0.006459172 0 c_(TLT) 0.298058252 0.295238095 0.298461538 0.298913043 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −8.97795964 1.31344944 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.142718447 0.147619048 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ 9.791468713 0.170587985 −0.71523762 −10.72534988 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.15776699 0.124603175 0.356153846 0.347826087 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0.003924448 0.001661439 0 0.00657999 a_(ψSi) ⁽¹⁾ 0.15776699 −0.024952541 0.02404454 −0.067389114 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 148.4588557 132.0861678 0 152.6937618 c_(ψSi) 15.29126214 46.9047619 14.19230769 43.04347826 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.06700163 0.042141715 0.055240362 0.061747926 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.73786408 −50.15873016 −49.76923077 −49.45652174 d_(TLTTS) 116.7290786 −78.78450728 0 0 d_(TLTTE) 0 85.46351406 −49.85282875 0 d_(TLTψSi) −0.70199108 0.445481139 0 0.604657146 d_(TLTθLT) −0.726496636 0 0 0 d_(TSTE) 0 −116.360096 0 0 d_(TSψSi) 0 −0.622709588 0 0 d_(TSθLT) 2.041329502 −0.339115637 0 0 d_(TEψSi) 0 0.20688896 0 0 d_(TEθLT) 0.774150432 0.439880407 −0.6608739 −1.068569294 d_(ψSiθLT) −0.005400114 0.002667922 −0.004937546 0.006290209 e −4.209434885 −1.791078273 −3.48174155 −3.934527612 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

TABLE 23 Si(111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0 .25 0.25 ≤ TE ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −4.673850215 0 −8.8586067 −1.957300157 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.141509434 0 0.153125 0.16 a_(TS) ⁽²⁾ 82.42811022 0 87.42203531 0 a_(TS) ⁽¹⁾ −7.905282467 −4.948155925 −0.569845134 0.521030757 b_(TS) ⁽²⁾ 0.006949092 0 0.006037326 0 c_(TS) 0.294339623 0.314583333 0.297916667 0.285 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 53.51232744 −79.38404758 0 0 a_(TE) ⁽¹⁾ 10.58973083 10.26534018 8.135327356 −7.251553825 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.006016376 0.005677083 0 0 c_(TE) 0.183962264 0.1375 0.336458333 0.37 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0.001429494 a_(ψSi) ⁽¹⁾ 0.010122468 0.039888924 −0.016592245 −0.004853684 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 145.6875 c_(ψSi) 11.88679245 48.4375 14.0625 45.75 a_(θLT) ⁽²⁾ 0 0 0 20 a_(θLT) ⁽¹⁾ −0.005093912 0.011098836 0.047530531 0.04750516 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50 −50.4166667 −50.72916667 −49.75 d_(TLTTS) 0 0 91.19418307 251.5375225 d_(TLTTE) 0 0 −156.3654518 0 d_(TLTψSi) 0.322255595 0 0 −0.289820964 d_(TLTθLT) −0.768436344 0 −0.735737765 0 d_(TSTE) 0 75.51836907 0 0 d_(TSψSi) −0.512402643 0.300543357 −0.724013025 0.245746891 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.50556971 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0.002842264 0 0 e −2.770026639 −2.638591885 −1.980941925 −2.412296494 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599;

and TABLE 24 Si(111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 0 ≤ ψ_(Si) < 30 30 ≤ ψ_(Si) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 4.449764983 0 −13.78321665 −10.59163435 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.321052632 0 0.309146341 0.303164557 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 −3.433673203 −1.746861763 3.363230821 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0.283443709 0.287804878 0.293037975 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 86.18383552 0 a_(TE) ⁽¹⁾ 3.853394073 8.768511808 −1.86755053 −15.6861606 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0.007157942 0 c_(TE) 0.181578947 0.135430464 0.356097561 0.363291139 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ 0.014178515 0.049910217 −0.008697771 0.012742666 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 12.63157895 45.99337748 15.09146341 45 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0.061867934 0.051566965 0.028929641 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −50.59602649 −50.30487805 −50.56962025 d_(TLTTS) 0 0 0 −103.0440888 d_(TLTTE) 0 0 0 0 d_(TLTψSi) −0.181721459 0 0 0 d_(TLTθLT) 0 0 0 −0.608943868 d_(TSTE) 0 113.1914268 −75.04640382 −82.04954672 d_(TSψSi) 0 0 −0.554356722 0.673316097 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 −0.512800103 0 d_(TEθLT) 0 0 −0.656702553 0 d_(ψSiθLT) 0 0 0 0 e −2.401219798 −3.18651044 −3.93030224 −4.143483981 a_(TP) 0 0 00 0 b_(TP) 0 0 0 c_(TP) −15.448 −15.448 −15.448 −15.448 d_(TP) −2.9188 −2.9188 −2.9188 −2.9188 f_(TP) 1.0599 1.0599 1.0599 1.0599.


14. An acoustic wave filter comprising: a plurality of resonators; wherein at least one of the plurality of resonators is defined by the acoustic wave device according to claim
 13. 15. A composite filter device comprising: N band pass filters having different pass bands where N is two or more; wherein one terminal of each of the N band pass filters is connected in common on an antenna terminal side; at least one of the N band pass filters excluding a band pass filter having a highest pass band includes one or more acoustic wave resonators; and at least one of the one or more acoustic wave resonators is the acoustic wave device according to claim
 13. 16. The acoustic wave device according to claim 13, wherein a thickness of the lithium tantalate film is equal to or less than about 3.5λ.
 17. An acoustic wave device comprising: a silicon support substrate; a silicon oxide film laminated above the silicon support substrate; a lithium tantalate film laminated above the silicon oxide film; an IDT electrode having an electrode finger and being provided above the lithium tantalate film; and a protection film covering at least a portion of the IDT electrode; wherein when a wavelength determined by an electrode finger pitch of the IDT electrode is denoted by ο, a wavelength normalized film thickness of the lithium tantalate film is denoted by T_(LT), θ of an Euler angle of the lithium tantalate film is denoted by θ_(LT), a wavelength normalized film thickness of the silicon oxide film is denoted by T_(S), a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness being a product of a wavelength normalized film thickness of the IDT electrode and a value obtained when density of the IDT electrode is divided by density of aluminum is denoted by T_(E), a wavelength normalized film thickness of the protection film being a product of a value obtained when density of the protection film is divided by density of silicon oxide and a wavelength normalized film thickness which is a thickness of the protection film normalized by the wavelength λ is denoted by T_(P), a propagation direction in the silicon support substrate is denoted by ψ_(Si), and a wavelength normalized film thickness which is a thickness of the silicon support substrate normalized by the wavelength λ is denoted by T_(Si), T_(LT), θ_(LT), T_(S), T_(E), T_(P), and ψ_(Si) are set such that a value represented by Formula (1) below is larger than about −2.4; $\begin{matrix} {{I_{h} = {\left( {{a_{T_{LT}}^{(2)}\left( {\left( {T_{LT} - c_{T_{LT}}} \right)^{2} - b_{T_{LT}}^{(2)}} \right)} + {a_{T_{LT}}^{(1)}\left( {T_{LT} - c_{T_{LT}}} \right)} + {a_{T_{S}}^{(2)}\left( {\left( {T_{S} - c_{T_{S}}} \right)^{2} - b_{T_{S}}^{(2)}} \right)} + {a_{T_{S}}^{(1)}\left( {T_{S} - c_{T_{S}}} \right)} + {a_{T_{B}}^{(4)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{4} - b_{T_{E}}^{(4)}} \right)} + {a_{T_{E}}^{(3)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{3} - b_{T_{E}}^{(3)}} \right)} + {a_{T_{E}}^{(2)}\left( {\left( {T_{E} - c_{T_{E}}} \right)^{2} - b_{T_{E}}^{(2)}} \right)} + {a_{T_{E}}^{(1)}\left( {T_{E} - c_{T_{E}}} \right)} + {a_{\Psi_{Si}}^{(6)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{6} - b_{\Psi_{Si}}^{(6)}} \right)} + {a_{\Psi_{Si}}^{(5)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{5} - b_{\Psi_{Si}}^{(5)}} \right)} + {a_{\Psi_{Si}}^{(4)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{4} - b_{\Psi_{Si}}^{(4)}} \right)} + {a_{\Psi_{Si}}^{(3)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{3} - b_{\Psi_{Si}}^{(3)}} \right)} + {a_{\Psi_{Si}}^{(2)}\left( {\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)^{2} - b_{\Psi_{Si}}^{(2)}} \right)} + {a_{\Psi_{Si}}^{(1)}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {a_{\theta_{LT}}^{(2)}\left( {\left( {\theta_{LT} - c_{\theta_{LT}}} \right)^{2} - b_{\theta_{LT}}^{(2)}} \right)} + {a_{\theta_{LT}}^{(1)}\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{LT^{T}S}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{S} - c_{T_{S}}} \right)} + {d_{T_{LT^{T}E}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{LT^{\Psi}{Si}}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{LT^{\theta}LT}}\left( {T_{LT} - c_{T_{LT}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{S^{T_{E}}}}\left( {T_{S} - c_{T_{S}}} \right)\left( {T_{E} - c_{T_{E}}} \right)} + {d_{T_{S^{\Psi}Si}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{S^{\theta}LT}}\left( {T_{S} - c_{T_{S}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{T_{E^{\Psi}Si}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)} + {d_{T_{E^{\theta}LT}}\left( {T_{E} - c_{T_{E}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + {d_{\Psi Si^{\theta}LT}\left( {\Psi_{Si} - c_{\Psi_{Si}}} \right)\left( {\theta_{LT} - c_{\theta_{LT}}} \right)} + e} \right)\left( {{a_{T_{P}}T_{P}^{4}} + {b_{T_{P}}T_{P}^{3}} + {c_{T_{P}}T_{P}^{2}} + {d_{T_{P}}T_{p}} + f_{T_{P}}} \right)}};} & {{Formula}(1)} \end{matrix}$ where, coefficients a, b, c, d, e, and fin Formula (1) are values described in Table 25 to Table 36 below that are determined in accordance with a crystal orientation of the silicon support substrate and a range of T_(S), T_(LT), and ψ_(Si): TABLE 25 Si(100) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −16.39135605 −16.39135605 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.196774194 0.196774194 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −4.824831305 −4.824831305 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.170967742 0.170967742 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −45.57608817 −45.57608817 a_(TE) ⁽¹⁾ −10.80005563 −10.80005563 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.018296046 0.018296046 c_(TE) 0.303225806 0.303225806 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000172048 0.000172048 a_(ψSi) ⁽²⁾ −0.00384923 −0.00384923 a_(ψSi) ⁽¹⁾ −0.009826773 −0.009826773 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 143.0843208 143.0843208 b_(ψSi) ⁽²⁾ 215.8688866 215.8688866 c_(ψSi) 22.25806452 22.25806452 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.066799879 0.066799879 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −50.16129032 −50.16129032 d_(TLTTS) 0 0 d_(TLTTE) −112.847682 −112.847682 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) −1.750763196 −1.750763196 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0.466692151 0.466692151 d_(ψSiθLT) 0 0 e −2.904746788 −2.904746788 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978;

TABLE 26 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −8.135537689 −8.135537689 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.311659193 0.311659193 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −20.38200282 −20.38200282 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.149327354 0.149327354 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ −3.460675692 −3.460675692 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0.267488789 0.267488789 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0 0 a_(ψSi) ⁽²⁾ −0.003759233 −0.003759233 a_(ψSi) ⁽¹⁾ 0.015931998 0.015931998 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 0 0 b_(ψSi) ⁽²⁾ 239.0395946 239.0395946 c_(ψSi) 18.90134529 18.90134529 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.017576249 0.017576249 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.9103139 −49.9103139 d_(TLTTS) −152.1817236 −152.1817236 d_(TLTTE) 0 0 d_(TLTψSi) −0.359387178 −0.359387178 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) 0.911415415 0.911415415 d_(TEψSi) 0 0 d_(TEθLT) 0.275815872 0.275815872 d_(ψSiθLT) 0 0 e −3.952626598 −3.952626598 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978;

TABLE 27 Si(100) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −26.36951471 −26.36951471 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.161538462 0.161538462 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −10.09828536 −10.09828536 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.321025641 0.321025641 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ −21.38297597 −21.38297597 a_(TE) ⁽¹⁾ −2.383287449 −2.383287449 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0.01947666 0.01947666 c_(TE) 0.270512821 0.270512821 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000176024 0.000176024 a_(ψSi) ⁽²⁾ −0.001397911 −0.001397911 a_(ψSi) ⁽¹⁾ −0.107515297 −0.107515297 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ −282.3623122 −282.3623122 b_(ψSi) ⁽²⁾ 255.2071006 255.2071006 c_(ψSi) 23.84615385 23.84615385 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.085112984 0.085112984 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −48.97435897 −48.97435897 d_(TLTTS) 0 0 d_(TLTTE) 0 0 d_(TLTψSi) −0.816828716 −0.816828716 d_(TLTθLT) 0.865519967 0.865519967 d_(TSTE) 0 0 d_(TSψSi) −0.538336559 −0.538336559 d_(TSθLT) 0 0 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.002971652 0.002971652 e −3.504362202 −3.504362202 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978;

TABLE 28 Si(100) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 a_(TLT) ⁽²⁾ 0 0 a_(TLT) ⁽¹⁾ −6.371850196 −6.371850196 b_(TLT) ⁽²⁾ 0 0 c_(TLT) 0.292192192 0.292192192 a_(TS) ⁽²⁾ 0 0 a_(TS) ⁽¹⁾ −0.609606885 −0.609606885 b_(TS) ⁽²⁾ 0 0 c_(TS) 0.2996997 0.2996997 a_(TE) ⁽⁴⁾ 0 0 a_(TE) ⁽³⁾ 0 0 a_(TE) ⁽²⁾ 0 0 a_(TE) ⁽¹⁾ 0 0 b_(TE) ⁽⁴⁾ 0 0 b_(TE) ⁽³⁾ 0 0 b_(TE) ⁽²⁾ 0 0 c_(TE) 0 0 a_(ψSi) ⁽⁶⁾ 0 0 a_(ψSi) ⁽⁵⁾ 0 0 a_(ψSi) ⁽⁴⁾ 0 0 a_(ψSi) ⁽³⁾ 0.000224133 0.000224133 a_(ψSi) ⁽²⁾ −0.004048532 −0.004048532 a_(ψSi) ⁽¹⁾ −0.126847922 −0.126847922 b_(ψSi) ⁽⁶⁾ 0 0 b_(ψSi) ⁽⁵⁾ 0 0 b_(ψSi) ⁽⁴⁾ 0 0 b_(ψSi) ⁽³⁾ 1375.85979 1375.85979 b_(ψSi) ⁽²⁾ 281.2555799 281.2555799 c_(ψSi) 19.77477477 19.77477477 a_(θLT) ⁽²⁾ 0 0 a_(θLT) ⁽¹⁾ 0.056146223 0.056146223 b_(θLT) ⁽²⁾ 0 0 c_(θLT) −49.48948949 −49.48948949 d_(TLTTS) 94.47145497 94.47145497 d_(TLTTE) 0 0 d_(TLTψSi) 0 0 d_(TLTθLT) 0 0 d_(TSTE) 0 0 d_(TSψSi) 0 0 d_(TSθLT) −0.568942451 −0.568942451 d_(TEψSi) 0 0 d_(TEθLT) 0 0 d_(ψSiθLT) 0.005654813 0.005654813 e −4.940340284 −4.940340284 a_(TP) 0 0 b_(TP) 0 0 c_(TP) 19.811 19.811 d_(TP) −11.953 −11.953 f_(TP) 1.1978 1.1978;

TABLE 29 Si(110) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −11.04825287 −11.04825287 −11.04825287 −11.04825287 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.164705882 0.164705882 0.164705882 0.164705882 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.86806521 −12.86806521 −12.86806521 −12.86806521 a_(TE) ⁽¹⁾ 39.88235294 39.88235294 39.88235294 39.88235294 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.019258131 0.019258131 0.019258131 0.019258131 c_(TE) 0.286470588 0.286470588 0.286470588 0.286470588 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.000762445 −0.000762445 −0.000762445 −0.000762445 a_(ψSi) ⁽¹⁾ −0.031584918 −0.031584918 −0.031584918 −0.031584918 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 749.7716263 749.7716263 749.7716263 749.7716263 c_(ψSi) 52.58823529 52.58823529 52.58823529 52.58823529 a_(θLT) ⁽²⁾ −0.004115091 −0.004115091 −0.004115091 −0.004115091 a_(θLT) ⁽¹⁾ 0.023260981 0.023260981 0.023260981 0.023260981 b_(θLT) ⁽²⁾ 81.16262976 81.16262976 81.16262976 81.16262976 c_(θLT) −50.11764706 −50.11764706 −50.11764706 −50.11764706 d_(TLTTS) 0 0 0 0 d_(TLTTE) −32.35244505 −32.35244505 −32.35244505 −32.35244505 d_(TLTψSi) 0.348515389 0.348515389 0.348515389 0.348515389 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0.000823202 0.000823202 0.000823202 0.000823202 e −1.678155024 −1.678155024 −1.678155024 −1.678155024 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

TABLE 30 Si(110) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψsi) < 45 45 ≤ _(ψsi) ≤ 90 0 ≤ _(ψsi) < 45 45 ≤ _(ψsi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 34.01092867 34.01092867 a_(TLT) ⁽¹⁾ −3.294448859 −3.294448859 −2.996122319 −2.996122319 b_(TLT) ⁽²⁾ 0 0 0.005572031 0.005572031 c_(TLT) 0.328378378 0.328378378 0.31344086 0.31344086 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 2.752851676 2.752851676 −1.564359965 −1.564359965 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.162837838 0.162837838 0.160752688 0.160752688 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −4.548790211 −4.548790211 −1.370514553 −1.370514553 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.165540541 0.165540541 0.355913978 0.355913978 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −7.03888E−08 −7.03888E−08 −3.78178E−08 −3.78178E−08 a_(ψSi) ⁽⁴⁾ 1.4265E−06 1.4265E−06 9.79065E−07 9.79065E−07 a_(ψSi) ⁽³⁾ 0.000180358 0.000180358 9.73597E−05 9.73597E−05 a_(ψSi) ⁽²⁾ −0.002681874 −0.002681874 −0.00192926 −0.00192926 a_(ψSi) ⁽¹⁾ −0.092266284 −0.092266284 −0.04329175 −0.04329175 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 11701030.08 11701030.08 24265475.25 24265475.25 b_(ψSi) ⁽⁴⁾ 1439156.296 1439156.296 1705613.393 1705613.393 b_(ψSi) ⁽³⁾ 1798.436559 1798.436559 6938.899332 6938.899332 b_(ψSi) ⁽²⁾ 930.5183985 930.5183985 1060.880593 1060.880593 c_(ψSi) 40.23648649 40.23648649 40.08064516 40.08064516 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.046000242 0.046000242 0.001380272 0.001380272 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.52702703 −49.52702703 −50.05376344 −50.05376344 d_(TLTTS) −136.9978702 −136.9978702 −73.06084164 −73.06084164 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0.096651605 0.096651605 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 −56.78924979 −56.78924979 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.081014811 0.081014811 0 0 d_(TEθLT) 0 0 −0.194432704 −0.194432704 d_(ψSiθLT) 0 0 0.000875955 0.000875955 e −2.543790382 −2.543790382 −2.964933907 −2.964933907 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

TABLE 31 Si(110) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −13.1565646 −13.1565646 −13.1565646 −13.1565646 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.179661017 0.179661017 0.179661017 0.179661017 a_(TS) ⁽²⁾ −54.97015257 −54.97015257 −54.97015257 −54.97015257 a_(TS) ⁽¹⁾ 1.195559996 1.195559996 1.195559996 1.195559996 b_(TS) ⁽²⁾ 0.006496856 0.006496856 0.006496856 0.006496856 c_(TS) 0.299435028 0.299435028 0.299435028 0.299435028 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −12.83875925 −12.83875925 −12.83875925 −12.83875925 a_(TE) ⁽¹⁾ −2.591177902 −2.591177902 −2.591177902 −2.591177902 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.02062115 0.02062115 0.02062115 0.02062115 c_(TE) 0.282768362 0.282768362 0.282768362 0.282768362 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 a_(ψSi) ⁽¹⁾ −0.016861509 −0.016861509 −0.016861509 −0.016861509 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ −0.00094978 −0.00094978 −0.00094978 −0.00094978 c_(ψSi) 44.83050847 44.83050847 44.83050847 44.83050847 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020120147 0.020120147 0.020120147 0.020120147 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −50.50847458 −50.50847458 −50.50847458 −50.50847458 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0.250474306 0.250474306 0.250474306 0.250474306 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.031071552 0.031071552 0.031071552 0.031071552 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −1.687640015 −1.687640015 −1.687640015 −1.687640015 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

TABLE 32 Si(110) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 45 45 _(ψSi) ≤ 90 0 ≤ _(ψSi) < 45 45 ≤ _(ψSi) ≤ 90 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −8.387315737 −8.387315737 −11.34973266 −6.017883428 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.313377926 0.313377926 0.291082803 0.294578313 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.140898252 0.140898252 3.107378473 2.287606243 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.299331104 0.299331104 0.277707006 0.296385542 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ 0 0 0 0 a_(TE) ⁽¹⁾ −1.209727849 −1.209727849 −4.259242642 −1.280235687 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0 0 0 0 c_(TE) 0.152006689 0.152006689 0.343630573 0.351204819 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ −2.33027E−08 −2.33027E−08 0 0 a_(ψSi) ⁽⁴⁾ 7.78115E−07 7.78115E−07 0 0 a_(ψSi) ⁽³⁾ 5.59108E−05 5.59108E−05 −0.000194818 0 a_(ψSi) ⁽²⁾ −0.002410767 −0.002410767 0.000247924 0 a_(ψSi) ⁽¹⁾ −0.027662563 −0.027662563 0.12904143 −0.026766472 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 2083705.649 2083705.649 0 0 b_(ψSi) ⁽⁴⁾ 1386257.115 1386257.115 0 0 b_(ψSi) ⁽³⁾ −1267.41343 −1267.41343 1811.750092 0 b_(ψSi) ⁽²⁾ 895.5856198 895.5856198 293.105197 0 c_(ψSi) 42.14046823 42.14046823 19.39490446 67.95180723 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.020067585 0.020067585 −0.011988832 0.032566601 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −49.73244147 −49.73244147 −49.61783439 −50.96385542 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 41.29194486 d_(TLTψSi) 0 0 −0.203585177 0.376861254 d_(TLTθLT) 0 0 −0.273779971 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 −0.20937463 d_(TSθLT) −0.349110894 −0.349110894 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.216865482 −0.216865482 0 0 d_(ψSiθLT) 0 0 0.00120304 0 e −2.390757235 −2.390757235 −2.548464154 −2.523994879 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

TABLE 33 Si(111) 0 < T_(LT) < 0.2 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −3.047618237 −3.047618237 −3.047618237 −3.047618237 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.160869565 0.160869565 0.160869565 0.160869565 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0 0 0 0 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0 0 0 0 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 11.21750437 11.21750437 11.21750437 11.21750437 a_(TE) ⁽²⁾ −3.666215654 −3.666215654 −3.666215654 −3.666215654 a_(TE) ⁽¹⁾ −0.035248162 −0.035248162 −0.035248162 −0.035248162 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0.000381688 0.000381688 0.000381688 0.000381688 b_(TE) ⁽²⁾ 0.012589792 0.012589792 0.012589792 0.012589792 c_(TE) 0.245652174 0.245652174 0.245652174 0.245652174 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.003582211 −0.003582211 −0.003582211 −0.003582211 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 35.86956522 35.86956522 35.86956522 35.86956522 a_(θLT) ⁽²⁾ −0.000596775 −0.000596775 −0.000596775 −0.000596775 a_(θLT) ⁽¹⁾ 0.003385783 0.003385783 0.003385783 0.003385783 b_(θLT) ⁽²⁾ 77.88279773 77.88279773 77.88279773 77.88279773 c_(θLT) −47.82608696 −47.82608696 −47.82608696 −47.82608696 d_(TLTTS) 0 0 0 0 d_(TLTTE) −2.939323227 −2.939323227 −2.939323227 −2.939323227 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.000442922 −0.000442922 −0.000442922 −0.000442922 e −0.277577227 −0.277577227 −0.277577227 −0.277577227 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

TABLE 34 Si(111) 0.2 ≤ T_(LT) ≤ 3.5 0 ≤ T_(S) < 0.2 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 6.03484153 6.03484153 6.03484153 6.03484153 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.183333333 0.183333333 0.183333333 0.183333333 a_(TE) ⁽⁴⁾ −215.3850281 −215.3850281 −215.3850281 −215.3850281 a_(TE) ⁽³⁾ 54.12265846 54.12265846 54.12265846 54.12265846 a_(TE) ⁽²⁾ 0.942905209 0.942905209 0.942905209 0.942905209 a_(TE) ⁽¹⁾ −1.08045121 −1.08045121 −1.08045121 −1.08045121 b_(TE) ⁽⁴⁾ 0.000339332 0.000339332 0.000339332 0.000339332 b_(TE) ⁽³⁾ 0.000317558 0.000317558 0.000317558 0.000317558 b_(TE) ⁽²⁾ 0.011265432 0.011265432 0.011265432 0.011265432 c_(TE) 0.211111111 0.211111111 0.211111111 0.211111111 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004526908 −0.004526908 −0.004526908 −0.004526908 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 27.5 27.5 27.5 27.5 a_(θLT) ⁽²⁾ −0.00046365 −0.00046365 −0.00046365 −0.00046365 a_(θLT) ⁽¹⁾ 0.005349146 0.005349146 0.005349146 0.005349146 b_(θLT) ⁽²⁾ 57.09876543 57.09876543 57.09876543 57.09876543 c_(θLT) −46.11111111 −46.11111111 −46.11111111 −46.11111111 d_(TLTTS) 0 0 0 0 d_(TLTTE) 0 0 0 0 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 45.80413521 45.80413521 45.80413521 45.80413521 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) −0.071786246 −0.071786246 −0.071786246 −0.071786246 d_(ψSiθLT) −0.000425881 −0.000425881 −0.000425881 −0.000425881 e −0.446604617 −0.446604617 −0.446604617 −0.446604617 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

TABLE 35 Si(111) 0 < T_(LT) < 0.2 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ −2.477108842 −2.477108842 −2.477108842 −2.477108842 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0.137349398 0.137349398 0.137349398 0.137349398 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ −0.488747927 −0.488747927 −0.488747927 −0.488747927 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.336144578 0.336144578 0.336144578 0.336144578 a_(TE) ⁽⁴⁾ 0 0 0 0 a_(TE) ⁽³⁾ 0 0 0 0 a_(TE) ⁽²⁾ −1.973253274 −1.973253274 −1.973253274 −1.973253274 a_(TE) ⁽¹⁾ −0.124870592 −0.124870592 −0.124870592 −0.124870592 b_(TE) ⁽⁴⁾ 0 0 0 0 b_(TE) ⁽³⁾ 0 0 0 0 b_(TE) ⁽²⁾ 0.017915517 0.017915517 0.017915517 0.017915517 c_(TE) 0.256024096 0.256024096 0.256024096 0.256024096 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 7.6083E−07 7.6083E−07 7.6083E−07 7.6083E−07 a_(ψSi) ⁽³⁾ 7.21121E−06 7.21121E−06 7.21121E−06 7.21121E−06 a_(ψSi) ⁽²⁾ −0.000857107 −0.000857107 −0.000857107 −0.000857107 a_(ψSi) ⁽¹⁾ −0.00490823 −0.00490823 −0.00490823 −0.00490823 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 105622.9088 105622.9088 105622.9088 105622.9088 b_(ψSi) ⁽³⁾ −217.2019476 −217.2019476 −217.2019476 −217.2019476 b_(ψSi) ⁽²⁾ 208.4409929 208.4409929 208.4409929 208.4409929 c_(ψSi) 30.54216867 30.54216867 30.54216867 30.54216867 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0 0 0 0 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −90 −90 −90 −90 d_(TLTTS) 4.821777856 4.821777856 4.821777856 4.821777856 d_(TLTTE) −4.14067246 −4.14067246 −4.14067246 −4.14067246 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) 0 0 0 0 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0.024454063 0.024454063 0.024454063 0.024454063 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) 0 0 0 0 e −0.240178915 −0.240178915 −0.240178915 −0.240178915 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978;

and TABLE 36 Si(111) 0.2 ≤ T_(LT) ≤ 3.5 0.2 ≤ T_(S) ≤ 2.0 0.05 ≤ T_(E) < 0.25 0.25 ≤ T_(E) ≤ 0.45 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 0 ≤ _(ψSi) < 30 30 ≤ _(ψSi) ≤ 60 a_(TLT) ⁽²⁾ 0 0 0 0 a_(TLT) ⁽¹⁾ 0 0 0 0 b_(TLT) ⁽²⁾ 0 0 0 0 c_(TLT) 0 0 0 0 a_(TS) ⁽²⁾ 0 0 0 0 a_(TS) ⁽¹⁾ 0.380779889 0.380779889 0.380779889 0.380779889 b_(TS) ⁽²⁾ 0 0 0 0 c_(TS) 0.285294118 0.285294118 0.285294118 0.285294118 a_(TE) ⁽⁴⁾ −165.3225345 −165.3225345 −165.3225345 −165.3225345 a_(TE) ⁽³⁾ 23.65923214 23.65923214 23.65923214 23.65923214 a_(TE) ⁽²⁾ 2.256295059 2.256295059 2.256295059 2.256295059 a_(TE) ⁽¹⁾ −0.292409126 −0.292409126 −0.292409126 −0.292409126 b_(TE) ⁽⁴⁾ 0.00051583 0.00051583 0.00051583 0.00051583 b_(TE) ⁽³⁾ 0.00070344 0.00070344 0.00070344 0.00070344 b_(TE) ⁽²⁾ 0.015017301 0.015017301 0.015017301 0.015017301 c_(TE) 0.220588235 0.220588235 0.220588235 0.220588235 a_(ψSi) ⁽⁶⁾ 0 0 0 0 a_(ψSi) ⁽⁵⁾ 0 0 0 0 a_(ψSi) ⁽⁴⁾ 0 0 0 0 a_(ψSi) ⁽³⁾ 0 0 0 0 a_(ψSi) ⁽²⁾ 0 0 0 0 a_(ψSi) ⁽¹⁾ −0.004846255 −0.004846255 −0.004846255 −0.004846255 b_(ψSi) ⁽⁶⁾ 0 0 0 0 b_(ψSi) ⁽⁵⁾ 0 0 0 0 b_(ψSi) ⁽⁴⁾ 0 0 0 0 b_(ψSi) ⁽³⁾ 0 0 0 0 b_(ψSi) ⁽²⁾ 0 0 0 0 c_(ψSi) 29.55882353 29.55882353 29.55882353 29.55882353 a_(θLT) ⁽²⁾ 0 0 0 0 a_(θLT) ⁽¹⁾ 0.00165846 0.00165846 0.00165846 0.00165846 b_(θLT) ⁽²⁾ 0 0 0 0 c_(θLT) −48.52941176 −48.52941176 −48.52941176 −48.52941176 d_(TLTTS) −0.04933649 −0.04933649 −0.04933649 −0.04933649 d_(TLTTE) −0.021023839 −0.021023839 −0.021023839 −0.021023839 d_(TLTψSi) 0 0 0 0 d_(TLTθLT) 0 0 0 0 d_(TSTE) −7.074776252 −7.074776252 −7.074776252 −7.074776252 d_(TSψSi) 0 0 0 0 d_(TSθLT) 0 0 0 0 d_(TEψSi) 0 0 0 0 d_(TEθLT) 0 0 0 0 d_(ψSiθLT) −0.00049898 −0.00049898 −0.00049898 −0.00049898 e −0.3405485 −0.3405485 −0.3405485 −0.3405485 a_(TP) 0 0 0 0 b_(TP) 0 0 0 0 c_(TP) 19.811 19.811 19.811 19.811 d_(TP) −11.953 −11.953 −11.953 −11.953 f_(TP) 1.1978 1.1978 1.1978 1.1978.


18. An acoustic wave filter comprising: a plurality of resonators; wherein at least one of the plurality of resonators is defined by the acoustic wave device according to claim
 17. 19. A composite filter device comprising: N band pass filters having different pass bands where N is two or more; wherein one terminal of each of the N band pass filters is connected in common on an antenna terminal side; at least one of the N band pass filters excluding a band pass filter having a highest pass band includes one or more acoustic wave resonators; and at least one of the one or more acoustic wave resonators is the acoustic wave device according to claim
 17. 20. The acoustic wave device according to claim 17, wherein a thickness of the lithium tantalate film is equal to or less than about 3.5λ. 